BAX MARKING Search Results

marking BAX

Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Contextual Info: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking

Diode BAx

Abstract: E6327 Q67000-S280 DIN IEC 68-1
Contextual Info: SIEMENS BAX 280 FRED Diode Preliminary Data • • • VRRM 1000 V ^FRMS 5.5 A t„ 55 ns Soft recovery characteristics Type Ordering Code BAX 280 Q67000-S280 Pin Config uratio n Tape and Reel Information 1 2 3 4 E6327: 1000 pcs/reel not con­ A nected

S279

Abstract: IGBT Transistor bsp280 BAX marking bipolar transistor td tr ts tf marking BAX E6327 Q67000-S279
Contextual Info: IGBT Transistor BSP 280 Preliminary Data ● ● ● ● ● ● ● ● VCE 1000 V I C 2.5 A N channel MOS input voltage-controlled High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel

MBM29F200BA-90-X

Abstract: diode MARKING CODE A9 FPT-48P-M19 FPT-48P-M20 MBM29F200BA
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20838-1E FLASH MEMORY CMOS 2 M 256 K x 8/128 K × 16 BIT MBM29F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X • FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements

Contextual Info: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x

flash 48pin dqs

Abstract: programming mbm29F400
Contextual Info: FLASHM EM ORY CMOS M BM29F40GTA/BÄÄx^i 2-x • FEATURES • • • • • • • • • • • • • • • Single 5.0V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as EzPROMs

FLASH MEMORY 29F

Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
Contextual Info: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

46-PIN 29lv

Abstract: fujtsu
Contextual Info: FLASH MEMORY ¡BIMBIllMIBjiBIB IB IlijB lliiB illjB IB IIS lMllliillB H I 8M 1M x 8/512K x 16 BIT MBM29LV800TA-9o-)ü-i 2.x/MBM29LV800BA-»o-xm2.x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

MT49H16M18C

Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

smd dk qk

Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

smd marking codes BA5

Abstract: MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

SMD d1c

Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

Contextual Info: 8 SUGGESTED PANEL CUTOUT 1 A~tC. n 7 RT SPECIFICATIONS FUNCTION: 2P 2T O N — OFF— (ON) RATINGS: 20A 1 2 5 VAC, 15A 277VAC 2HP 12 5 /2 5 0 V A C APPROVALS: n, « MATERIALS_ BODY: PA66 ROCKER: PA66 CONTACTS: S ilve r P la ted C o p p e r

Contextual Info: 8 SCHEMATIC 1.240 [31,5] SP EC IFIC A T IO N S FUNCTION: 1P2T ON-ON 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] ELECTRICAL LIFE: 10,000 Cycles CONTACT RESISTANCE:

Contextual Info: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] O II ELECTRICAL LIFE: 10,000 Cycles

Contextual Info: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] I O II ELECTRICAL LIFE: 10,000 Cycles

MT49H16M18

Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

marking code a02 SMD Transistor

Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

MT49H16M18

Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

Contextual Info: 8 SCHEMATIC 1,240 [31,5] SPECIFICATIONS FUNCTION: 1P1T O FF-O N 0,827 [21.0] ON RATINGS: 20A 125VAC [UL, cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~ 1E4 T125 [European] 10(2)A 250V~ 5E4 T125 [European] OFF ELECTRICAL LIFE: 10,000 Cycles

MARKING H1 AMP

Abstract: MT49H16M18
Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

plastic BA7 marking code

Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

Contextual Info: 2GB 4GB X64, SR, DR : 204-Pin DDR3 SDRAM SODIMM SDRAM DDR3 256M, 512M X 64 SODIMM 204-Pin 4GB SODIMM Assembly Features: •               DDR3 functionality and operations supported as defined in the component data sheet

Contextual Info: 2GB, 4GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 256M, 512M X 64 UDIMM Features: •              DDR3 functionality and operations supported as per component data sheet ROHS Complaint 240 pin unbuffered dual in-line memory module