BAX 50 Search Results

BAX53

Abstract: BAX52 fast recovery epitaxial diode Bridge bax 53
Contextual Info: BAX 52 BAX 53 SILICON PLANAR DIODES U L T R A F A S T D IO D E B R ID G E A S S E M B L IE S The BAX 52 and BAX 53 are silicon planar epitaxial diode bridges in Jedec T O -12 and TO-72 metal cases respectively. They are designed for very high speed applications.

BAX73

Abstract: BAX71 ta 7176 BAX56 diode T-77 BAX65 BAX62 DIODE 73 BAX57 BAX58
Contextual Info: BAX 56to 73 SILICON PLANAR DIODES U L T R A FAST C OM M ON A N O D E A N D C O M M O N C A TH O D E A R R A Y S The BAX 56 to BAX 73 are silicon planar epitaxial diode arrays in JedecTO-72, TO-77 or TO-96 metal cases*. They are designed for high speed applications.

BAX50

Abstract: Diode BAx Bax51 BAX48 voltage multiple diode bax49 TO77 Diode BAX 12
Contextual Info: SILICON PLANAR DIODES ULTRA FAST DIODE MATRIX ASSEMBLIES The B AX 45, B A X 46, BAX 47, B A X 48, B A X 49, B A X 50 and BAX 51 are silicon planar epitaxial diode m atrix assemblies in Jedec T O -72, T O -7 7 or T O -9 6 metal cases*. They are designed for high speed applications.

Diode BAx

Abstract: E6327 Q67000-S280 DIN IEC 68-1
Contextual Info: SIEMENS BAX 280 FRED Diode Preliminary Data • • • VRRM 1000 V ^FRMS 5.5 A t„ 55 ns Soft recovery characteristics Type Ordering Code BAX 280 Q67000-S280 Pin Config uratio n Tape and Reel Information 1 2 3 4 E6327: 1000 pcs/reel not con­ A nected

marking BAX

Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Contextual Info: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

BAY41

Abstract: BAY43 bax12 BAY42
Contextual Info: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C

PT500 RTD

Abstract: pt100 sensor interface WITH ADC pt1000 sensor interface WITH ADC pt1000 thermistor curve LH4140ACH-1 lh4140 LM4140ACH-2 PT1000 table PT500 temperature sensor PT1000 temperature sensor
Contextual Info: ANALOG edge SM Practical Resistance-Temperature Detector Interface Solutions Application Note AN-1559 Chris Eckert, Principal Design Engineer Ron Bax, Product Applications Engineer From 0°C to 850°C, the resistance fits a 2nd-order polynomial: R6 1 RLOOP1

BAX12

Abstract: bay43
Contextual Info: Erosemi corp/ uatertoun 5üe d Switching <1347^3 0012377 524 • U N I T BAY41-BAY43 BAY60 BAX 12 FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and Is very popular for general purpose switching applications.

R811

Abstract: MHz-125 B-666 T811
Contextual Info: r-811 rEHEPATOPHblft TPHOfl TRIODE r eHepaTopHbiPi Tpnofl r -811 npeflHa3HaneH fl/ia re HepupoBaHiin KoneôaHMM b paflMOTexHunecKnx ycTpo- The r -811 triode is used as an oscillator in RF equip­ ment. iiCT Bax. OBU4HE CBEflEHMfl KaTOfl - BO/ibc|3paMOBbiM npnMoro HaKana.

pt100 amplifier schematic

Abstract: PT500 RTD rtd pt100 sensor thin film pt500 temperature sensor schematic constant current source rtd circuits pt100 interface WITH ADC Application Note 1559 AN-1559 PT1000 table pt1000 temperature sensor schematic
Contextual Info: National Semiconductor Application Note 1559 Chris Eckert, Ron Bax October 2007 1.0 Purpose 0°C. From −200°C to 0°C their Resistance vs Temperature characteristic is described by a 4th order polynomial This application note is intended to review Resistance Temperature Devices and commonly used interfaces for them.

2SB1002

Abstract: 2SD1368 2SD789
Contextual Info: HITACHI 2SD1368 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SB5Û02 I. Bax !. C i i l t n w 3 . fc in u l!« 4 CdJM H r J 0.14'T 4t3jra£& A K iu in r.'Li'j UPAK U ABSOLUTE MAXIMUM RATINGS (Xa=25»C) [(¿Ill •Symbol MAXIMUM COLLECTOR DISSIPATION

2SB1079

Abstract: 2SD1559
Contextual Info: HITACHI 2SD1559 SILICON NPN TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AM PLIFIER COMPLEMENTARY PAIR WITH 2SB1079 U!ia2 ! 6.0»nM J u L Baxç 2 . C ölk C IO T (Piangi '• 0 .6 1 0 2 .V F irm ie r (Ditncmions in mm) iu (TO-3P) MAXIMUM COLLECTOR DISSIPATION

itt 3906

Abstract: NSL-28AA 3906 NSL-28 silonex NSL
Contextual Info: S IL O N E X IN C 47E D Ô2SS271 00Q 03SI, fl • SXI NSL-28 & NSL-28AA 0PT0IS0LAT0RS CO SILONEX 1 NSL-28. TEST CONDITIONS CHARACTERISTICS . MIN. TYP, BAX. . HIH. HSl~28AA TYP. HAX. . . UNITS . -LED* If . ttox f«d current VF F o m r d voltage IF=16aA IR

AN-1559

Abstract: T1003 RTDPT100 LM4140ACH-2 LM4140 LMP7704 PT1000 PT500 VLMP7704 24.9k
Contextual Info: ANALOG edge 実用的な測温抵抗体（RTD）インタフェース･ソリューション Application Note AN-1559 Chris Eckert, Principal Design Engineer Ron Bax, Product Applications Engineer 0℃から+850℃までの温度範囲では抵抗値は次の2次多

AN-1559

Abstract: 08635 RTD PT100 R10634 rtd pt100 -50 to 200 PT1000 RTD LM4140 LMP7702 LMP7704 PT1000
Contextual Info: 应用注释1559 Chris Eckert，Ron Bax 2007年6月 1.0 用途 100，500和1000分别表示在0 oC处的相应阻值。从－ 本应用注释致力于讨论电阻温度器件及其常用的接 200oC变化至0oC的范围，它们的阻值与温度的特性可以

Contextual Info: AMP Aerospace/R uggedized Printed C ircuit Board Connectors Catalog 296350 issued 9-97 Extended M ini-Bax Pin Header Assem blies Style I H o u sing M a t e r ia l— L iq u ic c ry s ta l p o ly m e r C o n tact M a te r ia l an d F in is h — B ra ss p er Q Q -B -6 2 B p a tari 0 0 0 0 5 0

BAX54

Abstract: BAX55 Diode BAx
Contextual Info: BAX 54 SILICON PLANAR DIODES B A X 55 U LT R A FAST D IO D E R IN G M O D U LAT O R A SS E M B L IE S T he B A X 54 and B A X 55 are silico n planar e p ita xia l d io d e ring m o d u la to r assemblies in Jedec T O -1 2 and T O -7 2 m etal cases respectively. T he y are suitable fo r a p p lica tio n s in m u l­

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

BAV105

Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5