BAX 50 Search Results

BAX53

Abstract: BAX52 fast recovery epitaxial diode Bridge bax 53
Contextual Info: BAX 52 BAX 53 SILICON PLANAR DIODES U L T R A F A S T D IO D E B R ID G E A S S E M B L IE S The BAX 52 and BAX 53 are silicon planar epitaxial diode bridges in Jedec T O -12 and TO-72 metal cases respectively. They are designed for very high speed applications.

BAX73

Abstract: BAX71 ta 7176 BAX56 diode T-77 BAX65 BAX62 DIODE 73 BAX57 BAX58
Contextual Info: BAX 56to 73 SILICON PLANAR DIODES U L T R A FAST C OM M ON A N O D E A N D C O M M O N C A TH O D E A R R A Y S The BAX 56 to BAX 73 are silicon planar epitaxial diode arrays in JedecTO-72, TO-77 or TO-96 metal cases*. They are designed for high speed applications.

BAX50

Abstract: Diode BAx Bax51 BAX48 voltage multiple diode bax49 TO77 Diode BAX 12
Contextual Info: SILICON PLANAR DIODES ULTRA FAST DIODE MATRIX ASSEMBLIES The B AX 45, B A X 46, BAX 47, B A X 48, B A X 49, B A X 50 and BAX 51 are silicon planar epitaxial diode m atrix assemblies in Jedec T O -72, T O -7 7 or T O -9 6 metal cases*. They are designed for high speed applications.

marking BAX

Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Contextual Info: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

BAY41

Abstract: BAY43 bax12 BAY42
Contextual Info: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C

BAX12

Abstract: bay43
Contextual Info: Erosemi corp/ uatertoun 5üe d Switching <1347^3 0012377 524 • U N I T BAY41-BAY43 BAY60 BAX 12 FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and Is very popular for general purpose switching applications.

R811

Abstract: MHz-125 B-666 T811
Contextual Info: r-811 rEHEPATOPHblft TPHOfl TRIODE r eHepaTopHbiPi Tpnofl r -811 npeflHa3HaneH fl/ia re HepupoBaHiin KoneôaHMM b paflMOTexHunecKnx ycTpo- The r -811 triode is used as an oscillator in RF equip­ ment. iiCT Bax. OBU4HE CBEflEHMfl KaTOfl - BO/ibc|3paMOBbiM npnMoro HaKana.

2SB1002

Abstract: 2SD1368 2SD789
Contextual Info: HITACHI 2SD1368 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SB5Û02 I. Bax !. C i i l t n w 3 . fc in u l!« 4 CdJM H r J 0.14'T 4t3jra£& A K iu in r.'Li'j UPAK U ABSOLUTE MAXIMUM RATINGS (Xa=25»C) [(¿Ill •Symbol MAXIMUM COLLECTOR DISSIPATION

2SB1079

Abstract: 2SD1559
Contextual Info: HITACHI 2SD1559 SILICON NPN TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AM PLIFIER COMPLEMENTARY PAIR WITH 2SB1079 U!ia2 ! 6.0»nM J u L Baxç 2 . C ölk C IO T (Piangi '• 0 .6 1 0 2 .V F irm ie r (Ditncmions in mm) iu (TO-3P) MAXIMUM COLLECTOR DISSIPATION

an51

Contextual Info: rEHEPATOPHbIM TPMOfl ry-45A TRIODE reHepaTopHbiii Tpnofl ry-45A npeflHa3HaneH fl/ia p a ó o T b i b K a n e c T B e y cm iM T e rm m ou^hoctu, M O flyrm - Topa Bax. hjim reHepaTopa b paflMOTexHUHecKMX ycTpoficT- $ 116* 0,5 OBLILE CBEflEHMfl K a T O fl - C X EM A

AN-1559

Abstract: T1003 RTDPT100 LM4140ACH-2 LM4140 LMP7704 PT1000 PT500 VLMP7704 24.9k
Contextual Info: ANALOG edge 実用的な測温抵抗体（RTD）インタフェース･ソリューション Application Note AN-1559 Chris Eckert, Principal Design Engineer Ron Bax, Product Applications Engineer 0℃から+850℃までの温度範囲では抵抗値は次の2次多

BAX54

Abstract: BAX55 Diode BAx
Contextual Info: BAX 54 SILICON PLANAR DIODES B A X 55 U LT R A FAST D IO D E R IN G M O D U LAT O R A SS E M B L IE S T he B A X 54 and B A X 55 are silico n planar e p ita xia l d io d e ring m o d u la to r assemblies in Jedec T O -1 2 and T O -7 2 m etal cases respectively. T he y are suitable fo r a p p lica tio n s in m u l­

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

bax 50

Contextual Info: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 4Mbit 256K x 16 / 512K x 8 Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash

F14E

Abstract: F12E Sakata F13E LE28BW168T 2596H
Contextual Info: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28BW168T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles

f16e

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28DW8102T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles

RS 466-472

Contextual Info: |5 | Two Pole Connector T e c h n ic a l L ib r a ry Details_ RS Stock No 466-472 466-488 466-343 Plug Socket Hood Body Material Max Working Temp Current Rating Contact Resistance Working Voltage Phenolic 130°C 3A 50 mOhms 500V J 5 U _

PF527

Abstract: PF523
Contextual Info: R5 T e c h n ic a l L i b r a r y RS Stock No 402-989 PF Series Heatsink Details_ Man Part No PF527 HEATSINK PERFORMANCE TYPE PF523-526-527 LOCAL AIR SPEED M/s 90' z fin 70 00 UJCD c r ? 50 P o < UJ az 40 QC c o 30 1 ?o to u 5 10 POWER (watts) ^'

Contextual Info: 8 SPECIFICATIONS FUNCTION: 2P2T ON-OFF-ON RATINGS: 0.4VA Maximum at 20V AC or DC Maximum _L CONTACT RESISTANCE: 10mn Max. at 2-4VDC INSULATION RESISTANCE: 1.000MC2 Min. DIELECTRIC STRENGTH: 1.500VAC for 1 Minute ELECTRICAL LIFE: 50,000 Cycles at Full Load

Contextual Info: 8 SPECIFICATIONS SCHEMATIC FUNCTION: 1P2T ON— ON RATINGS: 30A 12VDC 100A Inrush 1 2 1.528 [38.8] 0.992 [25.2] 0.374 C9.5] r\ 3 ELECTRICAL LIFE: 200,000 Cycles CONTACT RESISTANCE: 30m fi Max. INSULATION RESISTANCE: 500M n at 500VDC Min. WITHSTAND VOLTAGE: