BAV 62 Search Results

Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current

connector 26 pin

Abstract: BAV 1G 8 bit data encoder 05N70 BAV 62
Contextual Info: Absolute single-turn shaft encoder BAV parallel features • absolute single-turn encoder up to 12 bit • fast, parallel interface • servo flange • Gray code general data mechanical data voltage supply 5 VDC ± 5% 05N 10 - 30 VDC (24K) max. revolutions

Diode BAV 19

Contextual Info: BAV 18.BA V 21 Si-Allzweck-Dioden Small Signal Si-Diodes 200 mA Nominal current Nennstrom 50.200 V Repetitive peak reverse voltage Periodische Spitzensperrspannung ecu ar ffÛX. 01.9 5£ 'f; nax. Svo - h“ 0.56 £ftJ Dimensions / Maße in mm DO-35 Glass case

bav 21 diode

Abstract: bav 17 diode Diode BAY 21 BAV20 BAV21 Diode BAY 19 BAV17 diode bav Diode BAV 19
Contextual Info: » W BAV17 tis BAV 21 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendung: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm • l0» KATHO DE CATHODE yx 01,9 » 0 ,5 5 Normgehäuse Case 54 A 2 DIN 4 1 880 JEDEC DO 35

BAV21

Abstract: BAV20
Contextual Info: Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 FEATURES DESCRIPTION • H erm etically sealed leaded glass S O D 27 D O -35 package The BAV 20 and BAV21 are sw itching diodes fabricated in planar technology, and encapsulated in herm etically sealed leaded glass S O D 27 (DO-35)

g 9084

Abstract: bav 24 diode BAV 303
Contextual Info: BAV300.BAV303 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic se a led parts • Fits onto S O D 323 / S O T 23 footprints • Electrical data identical with the B A V 100.B AV103 / BAV 200.B AV203 devices Applications

Contextual Info: Silicon Switching Diode Array • • BAV 74 F o r high -spe e d sw itching C o m m o n cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A V 74 JA Q 62702-A498 Q 62 70 2-A 69 5 S O T 23 Maximum ratings per diode

tcd103d

Abstract: TCD131D TCD142D TCD1301D CCD linear 22pin TCD1301 TCD143D TCD1100 TCD1200 TCD1250D
Contextual Info: S Selection Guide 1. Lineup of CCD Linear Image Sensors Group Type No. TCD101AC TCD102D TCD103D TCD104D TCD105C TCD106C/C-2 TCD107D/D-5 TCD131D TCD132D Lens TCD133D Reduction TCD136C-2 Type TCD140AC TCD141C TCD141ARC TCD142D TCD143D TCD1100D TCD1200D TCD1250D

bav 27 v

Abstract: BAV100 ir 0588 BAV103 aeg diode S906 diode bav
Contextual Info: A E G CORP 17E o o sm ati d o q ttbs a • D BAV100. BAV103 electronic Creative Technoiogies Silicon Epitaxial Planar Diodes Applications: General purposes Dim ensions in mm Terminals are tin plated Cathode Glass case SO D 80 MiniMELF Weight max. 0.1 g Absolute maxim um ratings

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

BFR 965

Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Contextual Info: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

Contextual Info: THORDARSON POWER TRANSFORMERS CONTROL TRANSFORMERS Primaries 115/230 Volts, 50/60 Hz – Dual Secondary Windings Solder Lug Terminations Secondary Volts may be reduced to 1/2 voltage by applying 115 V to the 230 V primary Output from Two Secondary Windings RMS

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

Thordarson

Abstract: 24S02
Contextual Info: THORDARSON AUDIO TRANSFORMERS AUDIO OUTPUT & LINE TO SPEAKER TRANSFORMERS OUTPUT - SINGLE PLATE TO VOICE COIL OR LINE Lead Termination Part Number 24S127 24S51 Impedance in Ohms Primary Secondary 1000 4.0 5000 3.5 Pri. MADC 90 40 Audio Watts 4 5 Turns Ratio

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

Diode BAW 62

Abstract: oszillograf 7x7x1 DIODE S45 Q68000-A1185-F1 99A7 01JE Diode BAW 99 500F2
Contextual Info: Silizium-Planar-Doppeldiode BAV99 Die epitaktische Silizium-Planar-Doppeldiode B A V 99 bestehend aus zwei in Reihe geschal­ teten Einzeldioden. Die Diode im Kunststoffgehäuse 23 A3 DIN 41 869 S O T -2 3 , findet Anwendung als schneller Schalter speziell für Dünn- und Dickfilmschaltungen. Der Typ

Contextual Info: Te m ic BAV17.BAV21 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications Genera! purposes i? Absolute Maximum Ratings T j = 25 °C Param eter Test C onditions Peak reverse voltage Reverse voltage Type Sym bol Value Unit BAVI7 V rrm 25 V

NF 847 G

Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Contextual Info: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W

E6327

Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Contextual Info: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: SEMICONDUCTOR BAV21 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast switching diode B C DIM MILLIMETERS A MAX 3.9 B MIN 27.5 MAX 1.9 C MAX 0.52 D A B MAXIMUM RATING Ta=25 CHARACTERISTIC D VRRM 250 V VR