BAV 62 Search Results

connector 26 pin

Abstract: BAV 1G 8 bit data encoder 05N70 BAV 62
Contextual Info: Absolute single-turn shaft encoder BAV parallel features • absolute single-turn encoder up to 12 bit • fast, parallel interface • servo flange • Gray code general data mechanical data voltage supply 5 VDC ± 5% 05N 10 - 30 VDC (24K) max. revolutions

bav 21 diode

Abstract: bav 17 diode Diode BAY 21 BAV20 BAV21 Diode BAY 19 BAV17 diode bav Diode BAV 19
Contextual Info: » W BAV17 tis BAV 21 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendung: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm • l0» KATHO DE CATHODE yx 01,9 » 0 ,5 5 Normgehäuse Case 54 A 2 DIN 4 1 880 JEDEC DO 35

g 9084

Abstract: bav 24 diode BAV 303
Contextual Info: BAV300.BAV303 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic se a led parts • Fits onto S O D 323 / S O T 23 footprints • Electrical data identical with the B A V 100.B AV103 / BAV 200.B AV203 devices Applications

tcd103d

Abstract: TCD131D TCD142D TCD1301D CCD linear 22pin TCD1301 TCD143D TCD1100 TCD1200 TCD1250D
Contextual Info: S Selection Guide 1. Lineup of CCD Linear Image Sensors Group Type No. TCD101AC TCD102D TCD103D TCD104D TCD105C TCD106C/C-2 TCD107D/D-5 TCD131D TCD132D Lens TCD133D Reduction TCD136C-2 Type TCD140AC TCD141C TCD141ARC TCD142D TCD143D TCD1100D TCD1200D TCD1250D

bav 27 v

Abstract: BAV100 ir 0588 BAV103 aeg diode S906 diode bav
Contextual Info: A E G CORP 17E o o sm ati d o q ttbs a • D BAV100. BAV103 electronic Creative Technoiogies Silicon Epitaxial Planar Diodes Applications: General purposes Dim ensions in mm Terminals are tin plated Cathode Glass case SO D 80 MiniMELF Weight max. 0.1 g Absolute maxim um ratings

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Diode BAW 62

Abstract: oszillograf 7x7x1 DIODE S45 Q68000-A1185-F1 99A7 01JE Diode BAW 99 500F2
Contextual Info: Silizium-Planar-Doppeldiode BAV99 Die epitaktische Silizium-Planar-Doppeldiode B A V 99 bestehend aus zwei in Reihe geschal­ teten Einzeldioden. Die Diode im Kunststoffgehäuse 23 A3 DIN 41 869 S O T -2 3 , findet Anwendung als schneller Schalter speziell für Dünn- und Dickfilmschaltungen. Der Typ

Contextual Info: Te m ic BAV17.BAV21 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications Genera! purposes i? Absolute Maximum Ratings T j = 25 °C Param eter Test C onditions Peak reverse voltage Reverse voltage Type Sym bol Value Unit BAVI7 V rrm 25 V

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: Tem ic BAV100.BAV103 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Applications General purposes Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Repetitive peak reverse voltage Type Symbol Value BAV100 V rrm 60 V BAV101 V rrm

BAV74

Contextual Info: BAV74 S ilizium -P lan ar-D oppeldiode Die Silizium-Planar-Doppeldiode B A V 7 4 im Kunststoffgehäuse SO T -2 3 eignet sich zum Einsatz als schnelle Schaltdiode in Schichtschaltungen. Die Diode wird mit den Codebuch­ staben J A gekennzeichnet. Die angegebenen Daten gelten, sofern nicht anders angegeben

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Contextual Info: Te m ic BAY 100.BAY 103 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purposes 94 Wl Absolute Maximum Ratings Tj = 25°C Param eter Test C onditions Peak reverse voltage •type BAV100 Reverse voltage Value U nit V rrm 60

Contextual Info: SK25DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JY; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JY;P C F <J%,+A .5 P @ +' =[ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

transistor t2a 82

Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:

A2ND

Abstract: CY7C9116 7C9116 7C9115
Contextual Info: CY7C9115 CY7C9116/CY7C9117 CYPRESS SEMICONDUCTOR CMOS 16-Bit Microprogrammed ALU CY7C9117 separate I/O — One and two operand arithmetic and logical operations — Bit m anipulation, field insertion/ extraction instructions — Eleven types of instructions

Contextual Info: AN6361N, AN6361NS t:'5 * 7 r ff lic A N 6 3 6 1 N , A N 6 3 6 1 N S VTR * 7 - APC 0 Ï & / V T R Color APC Circuits • M W Unit: mm A N6361N AN6361N AN6361NSIÌ, VTR;* 7-A P C ffl¥i*1*ÎM *E ]ï& T \ AN6360, AN6360S, AN6362, AN6362S -fe L i-to ■ « it