BAS70X Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70xW DIODE SCHOTTKY BARRIER DIODES  DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and dual diodes with different pin configuration are available.  FEATURES

smd marking gc

Abstract: BAS70 BAS70A BAS70A-AE3-R BAS70-AE3-R BAS70C-AE3-R G0 SOT-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES 3 DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. 1 2 SOT-23

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAS70xW DIODE SCH OT T K Y BARRI ER DI ODES  DESCRI PT I ON Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and dual diodes with different pin configuration are available. 

74 Z 0-0-71

Abstract: marking code vr marking code 300
Contextual Info: WILLAS FM120-M+ BAS70xTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAS70x DIODE SCH OT T K Y BARRI ER DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. ̈

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70xW DIODE SCHOTTKY BARRIER DIODES  DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and dual diodes with different pin configuration are available.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES  DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.  FEATURES

GC smd diode

Abstract: smd transistor A1 sot-23 smd marking gc K2 SOT23-3 sot-23 Marking 017 smd sot-23 AE3 smd sot-23 marking gc smd transistor AE3 smd diode marking sot-23 diode marking ED
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES „ DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. „ FEATURES

GC smd diode

Abstract: Schottky diode MARKING ED QW-R601-017 smd schottky diode marking ed sot-23 Marking 017 smd sot-23 marking gc G0 SOT-23 smd diode ED
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES „ DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. „ FEATURES

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

marking 122 PHILIPS SOD323 SC-76

Abstract: BAS70XY 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70H
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 08 — 4 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Schottky Diode Marking sc-70

Abstract: 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70H BAS70L
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 08 — 4 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

4G lte RF Transceiver

Abstract: murata LTE saw filter UMTS band 1 SMA duplexer 4G LTE PA murata LTE duplexer band 20 HSPA modem LTE bandpass filter AN241 LTE rf front end LTE filter band 40
Contextual Info: B GA 735 N 16 B GA 735 N 16 fo r 3 G / HS P A/L T E Applic atio ns S uppo r ting Ban d s 1, 2 and 5 with R efe r ence Res i s tor Rr ef= 27 k Ω Applic atio n N ote A N 241 Revision: Rev. 1.0 2010-08-31 RF and P r otecti on D evic es Edition 2010-08-31 Published by

Contextual Info: BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 1.0mA of 0.41V 3 Maximum leakage current @ 50V of 100nA

sot-363 MARKING lo

Contextual Info: BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 1.0mA of 0.41V 3 2 Maximum leakage current @ 50V of 100nA

a74 marking code

Abstract: MARKING code a72 A74 marking marking A70 BAS70SDW CODE A74 a72 sot BAS70ADW BAS70CDW BAS70TW
Contextual Info: BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 1.0mA of 0.41V 3 Maximum leakage current @ 50V of 100nA

BAS70ADW

Abstract: ADW 0.6 V BAS70CDW BAS70SDW BAS70TW SC70-6L sot 363 marking code CD marking ADW CDW 06
Contextual Info: BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 1.0mA of 0.41V 3 Maximum leakage current @ 50V of 100nA

MARKING CODE R7 DIODE

Abstract: MARKING CODE R7 DIODE sot-363
Contextual Info: BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 1.0mA of 0.41V 3 2 Maximum leakage current @ 50V of 100nA

cdma Booster schematic

Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Contextual Info: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….

4G lte RF Transceiver

Abstract: LTE filter band 13 for3g murata WCDMA duplexer LTE duplexer 700 MHz BGA749 lte RF Transceiver BGA728L7 LTE Receiver BGA711L7
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s I, II , V an d VI II with Reference Resistor Rref= 2.7 kΩ Application Note AN236 Revision: Rev. 1.0 2010-08-26 RF and Protecti on Devi c es Edition 2010-08-26

4G lte RF Transceiver

Abstract: UMTS band 1 SMA duplexer LTE filter band 13 LTE bandpass filter PIN DIODES OFFER HIGH POWER HF BAND SWITCHING LTE rf front end 3g phone CIRCUIT diagram bgsf18 3G HSDPA circuits diagram BGA749N16
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 8.2 kΩ Application Note AN239 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by

4G lte RF Transceiver

Abstract: BGA736L16 bgsf18 LTE filter band 40 BGA749 LTE rf front end 1462 lte RF Transceiver LTE bandpass filter circuit diagram of rf transceiver at 3.5G
Contextual Info: B GA 777L 7 B GA 777L 7 fo r LT E Applic atio ns Sup por tin g B and 38 or 40 with R efe r ence Res i s tor Rr ef= 8.2 k Ω Applic atio n N ote A N 242 Revision: Rev. 1.0 2010-09-02 RF and P r otecti on D evic es Edition 2010-09-02 Published by Infineon Technologies AG

bas70-04w sc70

Abstract: DIODE SMD MARKING CODE S8 sod323 diode marking code 74 sot23 marking jsp MARKING SOT23 .215 .235 BAS70 sot23 1PS79SB70 BAS70 BAS70-04W BAS70-05
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 08 — 4 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview