BAI 59 Search Results

Sandisk NAND Flash memory controller wear level

Abstract: THNCF032MB
Contextual Info: Preliminary version THNCFxxxMBA/BAI Series *THNCFｘｘｘ ｘｘｘMBA/BAI Series ｘｘｘ CompactFlash Card OUTLINE The THNCF*MBA/BAI series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type （Toshiba） flash memory device.

backup file block signal flash ata 16 mb pcmcia

Abstract: TOSHIBA AUDIO IC 1015 toshiba nand flash 16Mb
Contextual Info: THNCFxxxMBA/BAI Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxMBA/BAI series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type （Toshiba） flash memory device.

THNCF

Abstract: sandisk nAND flash 64Mb 388
Contextual Info: THNCFxxxMBA/BAI Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxMBA/BAI series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type 䋨Toshiba䋩 flash memory device.

SanDisk compactflash 256Mb

Contextual Info: THNCFxxxMBA/BAI Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxMBA/BAI series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type （Toshiba） flash memory device.

Renesas IGBT

Abstract: Flashlamp schematic Flyback Transformers SANYO TV flyback transformer high-voltages 7805 5V REGULATOR IC THREE TERMINAL led driver 12v 100w FTA160709 LT6103 Led driver 30v 50W schematic top h-bridge igbt pwm
Contextual Info: LINEAR TECHNOLOGY DECEMBER 2006 IN THIS ISSUE… Cover Article Reliable, Efficient LED Backlighting for Large LCD Displays .1 Hua Walker Bai Linear Technology in the News….2 Design Features Precise Current Sense Amplifiers

Trench MOSFET Termination Structure

Abstract: Diodes ed26 PN channel MOSFET 10A Design Seminar electric field International Power Sources International Semiconductor Technologies etal p407 vishay ED26 Designing with Field Effect Transistors
Contextual Info: Presented at the 7th International Seminar on Power Semiconductors, ISPS’06, Prague, Czech Republic, 2006. Low-Voltage, Super-Junction Technology Deva N. Pattanayak, Yuming Bai, and King Owyang Vishay Siliconix 2201 Laurelwood Road, Santa Clara, CA 95054, USA

pcf5073h

Abstract: "GSM baseband" A1FK
Contextual Info: Philips Semiconductors Short-form preliminary specification GSM Baseband and Audio Interface BAI PCF5073 FEATURES 2. • Low power device in 0.5 micron CMOS technology for 3.0 V typical power supply The transmit path, which transforms a bitstream to analog quadrature signals for the RF devices.

128Gb Nand flash toshiba

Abstract: THNAT640MBAI 13AH backup file block signal flash ata 16 mb pcmcia THNAT1G53BAI toshiba nand flash 640MB THNAT016MBAI toshiba 128gb nand flash
Contextual Info: Preliminary version THNATxxxxBAI Series THNATxxxx THNATxxxxB ATxxxxBAI Series Flash Memory Card ATA OUTLINE The THNAT*BAI series Flash Memory Card ATA is a flash technology based with ATA interface memory card. It is constructed with flash disk controller chip and Toshiba NAND flash memory device. The Flash Memory Card

Contextual Info: CXD2422R 1/3 IL08 C-MOS TIMING GENERATOR FOR CCD CAMERA NC NC GND VDD NC VDD GND GND NC 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 GND 48 47 46 45 44 43 42 41 40

s29al004d55

Abstract: S29AL016D70TFI010 am29LV8000 S29PL064J70BFI120 S29AL016D70BFI020 Am29LV8000B S29JL064H90TFI000 S29AL008D70TFI020 S29JL032H70TFI020 S29JL032
Contextual Info: ORDERING PART NUMBER MAPPING GUIDE March, 2005 Release AMD PRODUCTS FUJITSU PRODUCTS SPANSION PRODUCTS Am29LV400B S29AL004D Am29LV800B/D S29AL008D Am29LV160D MBM29LV160TE/BE S29AL016D Am29LV160M S29AL016M Am29DL32xG TSOP MBM29DL32xE • MBM29DL32F • MBM29DL34F (TSOP)

spansion part marking

Abstract: Spansion S29GL256N spansion top marking SPANSION s29al016d s29al016 S29AL016D90TAI020 Am29LV256MH113REI S29AL016D70BAI010 S29GL128N10FAI010 S29AL016D70TFI020
Contextual Info: FLASH MEMORY OPN MAP GUIDE November, 2004 Release for: S29AL016D S29AL016M S29JL032H S29GL032M S29GL064M S29GL128N S29GL256N Spansion Order Part Number OPN Mapping Guide Use this tool to map an AMD OPN to its corresponding Spansion OPN. NOTE: This list may not include every available OPN. Please consult the

EV8AQ160

Abstract: EBGA380 BLD-3 EV8AQ160CTPY BHD4N ald2 transistor BLD0 ALD3 BH-D6 P22-R22
Contextual Info: EV8AQ160 Datasheet Summary Quad 8-bit 1.25 Gsps Dual 8-bit 2.5 Gsps Single 8-bit 5 Gsps 1. Main Features • Quad ADC with 8-bit Resolution • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

EV8AQ160

Abstract: EV8AQ160CTPY marking AC9 P22-R22
Contextual Info: EV8AQ160 Datasheet Summary Quad 8-bit 1.25 Gsps Dual 8-bit 2.5 Gsps Single 8-bit 5 Gsps 1. Main Features • Quad ADC with 8-bit Resolution • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

EV10AQ190

Abstract: Marking D9N EBGA380 DIODE B4N marking aa5 transistor marking c3n EV10AQ190TPY-EB EVX10AQ190TPY
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Datasheet Summary Main Features • Quad ADC with 10-bit Resolution using True e2v Single Core Technology • • • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

BAI 59 DIODE

Abstract: bai 57
Contextual Info: The BAl7800T and BAl78OOFP Series are 3-terminal, fixed positive output voltage regulators. These regulators are used to provide a stabilized output voltage from a fluctuating DC input voltage. There are 11 fixed output voltages, as follows 1 W, 6V, 7V, 8V, 9V, lOV, 12V, 15V, 18V, 2OV, and 24V. The maximum

BAI 59

Abstract: bai 57 BAI58 FF1506 1P640 FF1003 BAi59 FF1004 1P646
Contextual Info: FAGOR 3 Fast recovery silico n diodes. 1 Amp. to 1.5 Am ps. Repetitive Peak Forward Current Surge Forward Current Ma_x. Forward Volteige Drop at Ta = 25°C Max. Reverse Recovery Time !» *„ g a' Max. Reverse Current at Ta = 25°C s The plastic material carnes U L recognition 94V-0.

Contextual Info: THNIDxxxxBx Series Rev1.7 NAND Flash Drive - THNIDxxxxBx Series -Outline The THNIDxxxxBx NAND Flash Drive series from Toshiba features an IDE interface, a flash disk controller chip, and NAND-type flash memory devices. There are two form factors, 2.5 inch-type and 3.5 inch-type, available in the

Contextual Info: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM

Contextual Info: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

KMM366S424BT-GL

Contextual Info: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM374S1623BTL

Abstract: KMM374S1623BTL-G0
Contextual Info: KMM374S1623BTL PC66 SDRAM MODULE KMM374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BTL is a 16M bit x 72 Synchro­ nous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S824BT PC100 SDRAM MODULE KMM366S824BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung