BA120 Search Results

Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B / B A 12002 / B A 1 2 0 0 3 B / B A 1 2 0 0 3 BF / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high

VLN 2003

Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.

Seven Transistor Array PNP

Abstract: 30-C200 BA12001 BA12001B BA12003B BA12003BF BA12004B
Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor

BA12003

Contextual Info: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays BA12001, BA12002, BA12003, BA12004 ¡ i, $- >J > h- U S S r tjR Ltcrn,mi±^myk<n h 7 > y * £ 7 7U 'r ? 'f o U u-zn'JUtcifommftAffi zmSl z& Wt c

Contextual Info: BA12003 Transistors Darlington Transistor Array Number of Devices7 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

transistor BF 258

Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high

XR2204

Abstract: XR220 XR-2203 xr2203
Contextual Info: 7-Channel Drivers BA12003 BA12004 Dimensions Unit: mm 19.4±0.3 16 15 n 14 13 12 11 I— i l — i l — i l — i l — I 10 9 i~ i O u u u u u 1 2 3 4 5 u 6 u Ü 7 8 • Hi Iff k 2 .5 4 ± 0 .3 The BA12003 and BA12004 are highvoltage, high-current transistor arrays

Contextual Info: BA12002 Transistors Independent Transistor Array Military/High-RelN Number of Devices7 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

PNP DARLINGTON SINK DRIVER 7CH

Abstract: BA12003BF Seven Transistor Array PNP BA12001 BA12001B BA12002 BA12003B BA12004B
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12002 / BA12003B / BA12003BF / BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits of Darlington transistors.

BA12003

Abstract: bai2002
Contextual Info: BA12001 /BA12002/BA12003/BA12004 B A 1 2 0 0 1/ B A 1 2 0 0 2 B A 1 2 0 0 3 / B A 1 2 0 0 4 ¡ • W E * « * * - 1.!> High-Voltage, High-Current Darlington Transistor Arrays • ft /Dimensions Unit : mm BA12001, BA12002, BA12003, BA12004li, $ - <) > h > h 7 >

bf 194 pin configuration

Abstract: BA12004B BA12001 BA12001B BA12003B BA12003BF Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor

A12004

Abstract: BA12003 BA12002 BA12004
Contextual Info: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays The B A 1 2001 / B A 1 2 0 0 2 / B A 1 2 0 0 3 / B A 1 2004 are high- voltage, large-current transistor arrays that utilize D arlington transistors. Built-in su rg e a b so rb in g diode,

BAI2003

Abstract: XR-2203 UA2003 XR-2204 xr2203 XR2204 BA12003 BA12004 xr 2204 inductive load driving
Contextual Info: 7-Channel Drivers BA12003 BA12004 Dimensions Unit: mm 1 9 .4 ± 0 .3 16 15 14 13 n r~i i— im 12 11 m 10 9 f— I f— I O 1 2 The BA12003 and BA12004 are highvoltage, high-current transistor arrays each containing seven Darlington tran­ sistors. With internal surge suppressors

xr2201

Abstract: XR-2201 BA12001 inductive load driving "transistor array" TRANSISTOR ARRAY seven transistor drivers 6 transistor array source array resistors with internal diagram DARLINGTON ARRAYS
Contextual Info: High-Voltage, High-Current Darlington Transistor Array BA12001 Dimensions Unit: mm 16 15 14 13 12 11 10 o Ü I II II II II I u Î The BA12001 is a high-voltage, high­ current transistor array containing seven Darlington transistors. With internal surge suppressors for inductive load

Contextual Info: BA12001 Transistors Darlington Transistor Array Number of Devices7 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

BA1200T

Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits of Darlington transistors.

transistor bf 425

Abstract: Seven Transistor Array PNP BA12004B pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array BF 194 pin bf 194 pin configuration PNP DARLINGTON SINK DRIVER 500ma seven transistors PNP drivers BA12001B
Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor

XR2201

Contextual Info: 0101 High-Voltage, High-Current Darlington Transistor Array BA12001 Dimensions Unit: mm 19.4 ± 0 . 3 16 15 14 13 12 11 10 9 nr-ti-i n n n n n î Î 2 3 4 The BA12001 is a high-voltage, highcurrent transistor array containing seven Darlington transistors. With internal

BA12003

Abstract: transistor BA RW BA12004 transistor ba EL20M
Contextual Info: BA12001 BA12004 BA12002 BA12003 Driver, 7-channel, high current, high voltage The BA12001, BA12002, BA12003, and BA12004 are high-voltage, high-current transistor arrays consisting of 7 Darlington-connected transistors. Dimensions Units : mm (DIP16) Built-in surge absorbing diodes required

Contextual Info: BA120 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage50 Q Factor Min.440Â f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT

Contextual Info: BA12004 Transistors Darlington Transistor Array Number of Devices7 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

BA-1212S1

Abstract: BA-0505S1 BA-0505S BA-0512S BA-0512S1 BA-053R3S BA-053R3S1 BA-1205S BA-1205S1 BA-1212S
Contextual Info: BA - 0.5 to 1 Watt Isolated DC-DC Converter SIL Series Single Output 1. Features : n 4 Pin SIL Package n Low Ripple and Noise n Input / Output Isolation 1000 Vdc n 100 % Burn-In n Input Filter with Internal Capacitor n Custom Design Available 2. Absolute maximum ratings: