BA SO-8 PIN Search Results

"Led Level Meter Driver"

Abstract: SLB-26
Contextual Info: Audio iCs LED level meter driver, 12-point x 2 channel, VU scale, bar display BA6820F / BA6822S / BA6822F The BA6 8 2 0 F,BA 6 8 2 2 S and B A 6822F are tw o-channel, 12-point LED drivers for VU -scale bar-level meters. The ICs are available in 22-pin SO P B A 6820F and BA6822F and 22-pin shrink-DIP (BA6822S) packages, and use a

BAS70 73p

Contextual Info: Philips Semiconductors Product specification Schottky barrier double d iod es FEATURES B A S 7 0 series PINNING SOT23 (see Fig.la) • Low forward current DESCRIPTIO N • High breakdown voltage PIN • Guard ring protected BAS70 BAS70-04 BAS70-05 BAS70-06

Contextual Info: MITSUBISHI LSIS M 5 M 4 S 1 6 S 2 1 C T P -7 ,- 8 , - 1 0 16777216-BIT 2-BANK x 2Q97152-WORD BY 4-BIT SYNCHRONOUS DYNAMIC RAM some DESCRIPTION The M5M4S16S21CTP is a 2-bank x 2097152-word by 4-bit PIN CONFIGURATION (TOP VIEW) Synchronous DRAM, with SSTL* 1 interface. All inputs and out

Contextual Info: MITSUBISHI LSlS M 5 M 4 S 1 6 S 3 1 C T P - 7 ,- 8 ,- 1 0 •inai gome paf¿n ' °o chaos« • 16777216-BIT 2-BANK x 1048576-WORD BY 8-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M5M4S16S31CTP is a 2-bank x 1048576-word by 8-bit PIN CONFIGURATION (TOP VIEW)

T flip flop IC

Abstract: 74LS648 T flip flop IC CMOS
Contextual Info: M IT S U B IS H I HIGH SPEED CMOS M 74H C 648P/FP/D W P ^ OCTAL 3-S TA TE IN V E R TIN G BUS T R A N S C E IV E R AND D -T Y P E F L IP -F L O P D ESC R IPT IO N The M74HC648 is a semiconductor integrated circuit con­ PIN C O NFIG URATIO N TO P V IEW sisting of eight bus transceivers with inverted outputs.

Contextual Info: MITSUBISHI LSIs ' MH1S72CXJ-10,-12,-15 75,497,472-BIT 1,048,576-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH1S72CXJ is an 1M word by 72-bit Synchronous dynamic RAM module and consists of five industry standard

74AC11648

Contextual Info: 74AC/ACT 11648 Signetics Octal Transceiver/Register w/Direction Pin 3-State , INV Objective Specification ACL Products GENERAL INFORMATION FEATURES C O N D IT IO N S T . s 25°C ; G N D = 0V; • Octal bidirectional bus interface SYMBOL • 3-State buffers

Contextual Info: MITSUBISHI LSIs SDRAM Rev.1.2 0cr97 M5M4V64S30ATP-8A,-8, -10 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit

Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics

Contextual Info: Philips Semiconductors Product Specification Octal transceiver/register with dual enable; 3-state FEATURES • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Flow-through pin-out architecture Inputs accept voltages upto

Contextual Info: Product S pecification Philips S em iconductors Octal transceiver/register with dual enable; 3-state FEA TU R ES • • • • • • W ide supply voltag e range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Flow -through pin-out architecture

M52S32162A

Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics

M52D32162A

Contextual Info: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)

EM639165

Abstract: EM639165TS EM639
Contextual Info: EtronTech EM639165 8Mega x 16bits SDRAM Preliminary Rev 1.0, 2/2001 Features Pin Assignment (Top View) • Single 3.3 ± 0.3V power supply • Fast clock rate - PC133: 133 MHz (CL3) - PC100: 100 MHz (CL2) • Fully synchronous operation referenced to clock

Contextual Info: MITSUBISHI LSIs SDRAM Rev.0.2 Jan'97 M5M4V64S40ATP-8, "1 0, "1 2 Preliminary 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit

Contextual Info: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42RE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EBJ42HE8BAFA

Abstract: inphi E1412E20 inphi 1320 E1412e
Contextual Info: DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42HE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: MITSUBISHI LSIs SDRAM Rev.0.2 Ja n '97 M5M4V64S20ATP-8, -10, -12 Preliminary 64M (4-BANK x 4194304-WQRD x 4-BIT) Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit

Contextual Info: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.

54PIN

Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
Contextual Info: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.

1995 AND sdram AND

Contextual Info: DATA SHEET 128M bits Self Terminated Interface DDR SDRAM DC0122A 4M words x 32 bits Description Pin Configurations The DC0122A is a 128M bits self terminated interface DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at

tck9

Contextual Info: DATA SHEET 128M bits Self Terminated Interface DDR SDRAM DC0122A 4M words x 32 bits Description Pin Configurations The DC0122A is a 128M bits self terminated interface DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at

EDS1232AASE

Contextual Info: DATA SHEET 128M bits SDRAM EDS1232AASE 4M words x 32 bits Specifications Pin Configurations • Density: 128M bits • Organization  1M words × 32 bits × 4 banks • Package: 90-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V

8L-10L

Contextual Info: MITSUBISHI LSIs ^-, ._ SDRAM Rev.1.3 Mar'98 M5M4V64S30ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit