BA PART 2 DATE SHEET Search Results

Contextual Info: R E V IS IO N S PART NUMBER CODING "" t SWR25X-NRTC-S_ _-R_-BA REV. ECO . NO D E S C R IP T IO N DATE BY A 2237 IN IT IA L R E LE A S E 0 5 /2 3 /2 0 1 1 LH . TERMINATION TYPE A= RIGHT ANGLE BENT, TYPE2 B= RIGHT ANGLE BENT, TYPE 1 NUMBER OF POSITIONS CONTACTS PER ROW

175C

Abstract: 54ABT543 54ABT543E-QML 54ABT543J-QML 54ABT543W-QML 5962-9231401Q3A ABT543
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 04/25/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/95 MN54ABT543-X REV 0B0 OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS General Description The ABT543 octal transceiver contains two sets of D-type latches for temporary storage of

Contextual Info: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ41HE4BAFA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

175C

Abstract: 54ABT652 54ABT652E-QML 54ABT652J-QML 54ABT652W-QML
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/01/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT652-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT652 consists of bus tranceiver circuits with D-type flip-flops, and control

175C

Abstract: 54ABT646 54ABT646E-QML 54ABT646J-QML 54ABT646W-QML 5962-9457701Q3A MN54ABT646-X
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 08/25/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT646-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT646 consists of bus tranceiver circuits wit TRI-STATE, D-type flip-flops, and

175C

Abstract: 54ABT16646 54ABT16646W-QML 5962-9450202QXA
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 02/19/97 Last Update Date: 07/08/97 Last Major Revision Date: 06/09/97 MN54ABT16646-X REV 0A0 16 Bit TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT16646 consists of bus tranceiver circuits with TRI-STATE, D-type flip-flops, and

bc 4510 be

Abstract: E1253E40 DDR3 DIMM 240 pin names SSTE32882 DSAE00843
Contextual Info: DATA SHEET 2GB Registered DDR3 SDRAM DIMM EBJ20RE4BAFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR3 pcb layout raw card f so-dimm

Contextual Info: PRELIMINARY DATA SHEET 2GB DDR3 SDRAM SO-DIMM EBJ21UE8BAU0 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

EBJ21UE8BBS0

Contextual Info: PRELIMINARY DATA SHEET 2GB DDR3 SDRAM SO-DIMM EBJ21UE8BBS0 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

DDR3 pcb layout

Abstract: dj bj 810 edj5308base EBJ11ED8BAFA-AE-E CB1100
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ11ED8CAFA, EBJ11ED8BAFA 128M words x 72 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA

DDR3 SDRAM Component

Abstract: EBJ21EE8BAFA-DJ-E EBJ21EE8BAFA EBJ21EE8BAFA-8A-E
Contextual Info: PRELIMINARY DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ21EE8BAFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR3 DIMM 240 pin names

Abstract: EBJ21RE8BAFA-DJ-E E1251E40 EBJ21RE8BAFA-AE-E tras 36ns
Contextual Info: DATA SHEET 2GB Registered DDR3 SDRAM DIMM EBJ21RE8BAFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

ELPIDA DDR3

Abstract: EBJ21UE8BAU0 EDJ1108BABG-.DJE DDR3 sodimm pcb layout
Contextual Info: PRELIMINARY DATA SHEET 2GB DDR3 SDRAM SO-DIMM EBJ21UE8BAU0 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

EBJ21UE8BAU0

Abstract: DDR3 sodimm pcb layout edj1116
Contextual Info: PRELIMINARY DATA SHEET 2GB DDR3 SDRAM SO-DIMM EBJ21UE8BAU0 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

DDR3 sodimm pcb layout

Abstract: 1333G DDR3 pcb layout DDR3 pcb layout raw card f so-dimm a2198
Contextual Info: PRELIMINARY DATA SHEET 1GB DDR3 SDRAM SO-DIMM EBJ11UD8CASA, EBJ11UD8BASA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR3 SDRAM sealed in FBGA

inphi

Abstract: edj1116
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR3 SDRAM DIMM EBJ21RE8BAFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

inphi

Abstract: E1190E20 20D14
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ10RD4BAFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization ⎯ 128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

e1189

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ11RD8BAFA 128M words x 72 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: DATA SHEET LASER DIODE NX8563LB Series CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS DESCRIPTION The NX8563LB Series is a 1 550 nm laser diode with Polarization Maintain Fiber PMF . This device is designed as CW light source and ideal for D-WDM transmission systems in which external

Contextual Info: PRELIMINARY DATA SHEET 4GB DDR3 SDRAM SO-DIMM EBJ41UF8BAS0 512M words x 64 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 64 bits, 2 ranks • Mounting 16 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

EBJ10EE8BAFA

Abstract: EBJ10EE8BAFA-AE-E DDR3 DIMM elpida E1237E40
Contextual Info: DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ10EE8BAFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 9 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EBJ11UE6BAU0

Contextual Info: DATA SHEET 1GB DDR3 SDRAM SO-DIMM EBJ11UE6BAU0 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 8 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

EDJ5308BASE

Abstract: EBJ51UD8BAFA-AC-E EBJ51UD8CAFA-DG-E
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR3 SDRAM DIMM EBJ51UD8CAFA, EBJ51UD8BAFA 64M words x 64 bits, 1 Rank Specifications Features • Density: 512MB • Organization  64M words × 64 bits, 1 rank • Mounting 8 pieces of 512M bits DDR3 SDRAM sealed in FBGA

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ10RE8BAFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 9 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory