BA PART 2 DATE SHEET Search Results

Contextual Info: R E V IS IO N S PART NUMBER CODING "" t SWR25X-NRTC-S_ _-R_-BA REV. ECO . NO D E S C R IP T IO N DATE BY A 2237 IN IT IA L R E LE A S E 0 5 /2 3 /2 0 1 1 LH . TERMINATION TYPE A= RIGHT ANGLE BENT, TYPE2 B= RIGHT ANGLE BENT, TYPE 1 NUMBER OF POSITIONS CONTACTS PER ROW

175C

Abstract: 54ABT652 54ABT652E-QML 54ABT652J-QML 54ABT652W-QML
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/01/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT652-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT652 consists of bus tranceiver circuits with D-type flip-flops, and control

175C

Abstract: 54ABT646 54ABT646E-QML 54ABT646J-QML 54ABT646W-QML 5962-9457701Q3A MN54ABT646-X
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 08/25/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT646-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT646 consists of bus tranceiver circuits wit TRI-STATE, D-type flip-flops, and

175C

Abstract: 54ABT16646 54ABT16646W-QML 5962-9450202QXA
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 02/19/97 Last Update Date: 07/08/97 Last Major Revision Date: 06/09/97 MN54ABT16646-X REV 0A0 16 Bit TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT16646 consists of bus tranceiver circuits with TRI-STATE, D-type flip-flops, and

DDR3 pcb layout

Abstract: dj bj 810 edj5308base EBJ11ED8BAFA-AE-E CB1100
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ11ED8CAFA, EBJ11ED8BAFA 128M words x 72 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA

DDR3 SDRAM Component

Abstract: EBJ21EE8BAFA-DJ-E EBJ21EE8BAFA EBJ21EE8BAFA-8A-E
Contextual Info: PRELIMINARY DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ21EE8BAFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EBJ11UD8BAFA

Abstract: 1333G DDR3 pcb layout EBJ11UD8BAFA-AE-E EDJ5308BASE E1003E20
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ11UD8CAFA, EBJ11UD8BAFA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR3 SDRAM sealed in FBGA

DDR3 sodimm pcb layout

Abstract: 1333G DDR3 pcb layout DDR3 pcb layout raw card f so-dimm a2198
Contextual Info: PRELIMINARY DATA SHEET 1GB DDR3 SDRAM SO-DIMM EBJ11UD8CASA, EBJ11UD8BASA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR3 SDRAM sealed in FBGA

inphi

Abstract: E1190E20 20D14
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ10RD4BAFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization ⎯ 128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

e1189

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ11RD8BAFA 128M words x 72 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: DATA SHEET LASER DIODE NX8563LB Series CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS DESCRIPTION The NX8563LB Series is a 1 550 nm laser diode with Polarization Maintain Fiber PMF . This device is designed as CW light source and ideal for D-WDM transmission systems in which external

Contextual Info: PRELIMINARY DATA SHEET 4GB DDR3 SDRAM SO-DIMM EBJ41UF8BAS0 512M words x 64 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 64 bits, 2 ranks • Mounting 16 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

EBJ10EE8BAFA

Abstract: EBJ10EE8BAFA-AE-E DDR3 DIMM elpida E1237E40
Contextual Info: DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ10EE8BAFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 9 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EDJ5308BASE

Abstract: EBJ51UD8BAFA-AC-E EBJ51UD8CAFA-DG-E
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR3 SDRAM DIMM EBJ51UD8CAFA, EBJ51UD8BAFA 64M words x 64 bits, 1 Rank Specifications Features • Density: 512MB • Organization  64M words × 64 bits, 1 rank • Mounting 8 pieces of 512M bits DDR3 SDRAM sealed in FBGA

"dj ac"

Abstract: EBJ51ED8BAFA-8A-E EDJ5308BASE transistor BC 945
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR3 SDRAM DIMM EBJ51ED8CAFA, EBJ51ED8BAFA 64M words x 72 bits, 1 Rank Specifications Features • Density: 512MB • Organization  64M words × 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR3 SDRAM sealed in FBGA

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

1333G

Abstract: EBJ52UD6BASA EBJ52UD6BASA-8A-E DDR3 sodimm pcb layout a2198 EBJ52UD6BASA-AC-E
Contextual Info: PRELIMINARY DATA SHEET 512MB DDR3 SDRAM SO-DIMM EBJ52UD6CASA, EBJ52UD6BASA 64M words x 64 bits, 2 Ranks Specifications Features • Density: 512MB • Organization ⎯ 64M words × 64 bits, 2 ranks • Mounting 8 pieces of 512M bits DDR3 SDRAM sealed in FBGA

8C241

Abstract: dg sensing wiring circuit DDR3 pcb layout EBJ51RD8BAFA EDJ5308BASE EDJ5308BASE-AE-E CEH TI
Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR3 SDRAM DIMM EBJ51RD8BAFA 64M words x 72 bits, 1 Rank Specifications Features • Density: 512MB • Organization ⎯ 64M words × 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation

DDR3 DIMM 240 pin names

Abstract: ELPIDA DDR3 1183H
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ10UE8BDF0 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: Preliminary W19B32XMT/B Data Sheet 4M x 8/2M × 16 3V DUAL BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

IRF7506

Abstract: marking code EA SMD MOSFET
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching

C3998

Abstract: C3298 c3998 transistor c3998 transistor smd transistor C3298 C3995 C3295 oscillator MARKING CODE 200 smd marking code bs 3291 transistor C3998
Contextual Info: Crystek Corporation 941-561-3311 FAX 941-561-1025 5 X 7 mm SMD HCMOS/TTL Oscillator with High Load Specification Sheet "a3" Dimensions inches mm All dimensions are MAX unless otherwise specified. .295 MAX insert date code as (7.50) per marking specification

Contextual Info: 13 12 10 <L NOTES: 1. MATERIALS HOUSING: 30 X GLASS-FILLED PBT. UL94 V -0 TERMINAL: BRASS 0.60REF. THICK PLATING: OPTIONAL SEE CHARTS SHEETS 2-9 5Hn TIN OVER 2.5Hn NICKEL ALLOVER SELECTIVE SILVER 2Mn MIN SILVER 3-5Mn TIN OVER 2.5Mn NICKEL ALLOVER 2. PRODUCT CONFORMS TO SPECIFICATION P S -9 9020-00 38/39