BA PART 2 DATE SHEET Search Results

Contextual Info: R E V IS IO N S PART NUMBER CODING "" t SWR25X-NRTC-S_ _-R_-BA REV. ECO . NO D E S C R IP T IO N DATE BY A 2237 IN IT IA L R E LE A S E 0 5 /2 3 /2 0 1 1 LH . TERMINATION TYPE A= RIGHT ANGLE BENT, TYPE2 B= RIGHT ANGLE BENT, TYPE 1 NUMBER OF POSITIONS CONTACTS PER ROW

175C

Abstract: 54ABT652 54ABT652E-QML 54ABT652J-QML 54ABT652W-QML
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/01/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT652-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT652 consists of bus tranceiver circuits with D-type flip-flops, and control

175C

Abstract: 54ABT646 54ABT646E-QML 54ABT646J-QML 54ABT646W-QML 5962-9457701Q3A MN54ABT646-X
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 08/25/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT646-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT646 consists of bus tranceiver circuits wit TRI-STATE, D-type flip-flops, and

175C

Abstract: 54ABT16646 54ABT16646W-QML 5962-9450202QXA
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 02/19/97 Last Update Date: 07/08/97 Last Major Revision Date: 06/09/97 MN54ABT16646-X REV 0A0 16 Bit TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT16646 consists of bus tranceiver circuits with TRI-STATE, D-type flip-flops, and

DDR3 pcb layout

Abstract: dj bj 810 edj5308base EBJ11ED8BAFA-AE-E CB1100
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ11ED8CAFA, EBJ11ED8BAFA 128M words x 72 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA

EBJ11UD8BAFA

Abstract: 1333G DDR3 pcb layout EBJ11UD8BAFA-AE-E EDJ5308BASE E1003E20
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ11UD8CAFA, EBJ11UD8BAFA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR3 SDRAM sealed in FBGA

DDR3 sodimm pcb layout

Abstract: 1333G DDR3 pcb layout DDR3 pcb layout raw card f so-dimm a2198
Contextual Info: PRELIMINARY DATA SHEET 1GB DDR3 SDRAM SO-DIMM EBJ11UD8CASA, EBJ11UD8BASA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR3 SDRAM sealed in FBGA

inphi

Abstract: E1190E20 20D14
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ10RD4BAFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization ⎯ 128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

e1189

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR3 SDRAM DIMM EBJ11RD8BAFA 128M words x 72 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: DATA SHEET LASER DIODE NX8563LB Series CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS DESCRIPTION The NX8563LB Series is a 1 550 nm laser diode with Polarization Maintain Fiber PMF . This device is designed as CW light source and ideal for D-WDM transmission systems in which external

Contextual Info: PRELIMINARY DATA SHEET 4GB DDR3 SDRAM SO-DIMM EBJ41UF8BAS0 512M words x 64 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 64 bits, 2 ranks • Mounting 16 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in

EDJ5308BASE

Abstract: EBJ51UD8BAFA-AC-E EBJ51UD8CAFA-DG-E
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR3 SDRAM DIMM EBJ51UD8CAFA, EBJ51UD8BAFA 64M words x 64 bits, 1 Rank Specifications Features • Density: 512MB • Organization  64M words × 64 bits, 1 rank • Mounting 8 pieces of 512M bits DDR3 SDRAM sealed in FBGA

"dj ac"

Abstract: EBJ51ED8BAFA-8A-E EDJ5308BASE transistor BC 945
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR3 SDRAM DIMM EBJ51ED8CAFA, EBJ51ED8BAFA 64M words x 72 bits, 1 Rank Specifications Features • Density: 512MB • Organization  64M words × 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR3 SDRAM sealed in FBGA

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

8C241

Abstract: dg sensing wiring circuit DDR3 pcb layout EBJ51RD8BAFA EDJ5308BASE EDJ5308BASE-AE-E CEH TI
Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR3 SDRAM DIMM EBJ51RD8BAFA 64M words x 72 bits, 1 Rank Specifications Features • Density: 512MB • Organization ⎯ 64M words × 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

C3998

Abstract: C3298 c3998 transistor c3998 transistor smd transistor C3298 C3995 C3295 oscillator MARKING CODE 200 smd marking code bs 3291 transistor C3998
Contextual Info: Crystek Corporation 941-561-3311 FAX 941-561-1025 5 X 7 mm SMD HCMOS/TTL Oscillator with High Load Specification Sheet "a3" Dimensions inches mm All dimensions are MAX unless otherwise specified. .295 MAX insert date code as (7.50) per marking specification

Contextual Info: 13 12 10 <L NOTES: 1. MATERIALS HOUSING: 30 X GLASS-FILLED PBT. UL94 V -0 TERMINAL: BRASS 0.60REF. THICK PLATING: OPTIONAL SEE CHARTS SHEETS 2-9 5Hn TIN OVER 2.5Hn NICKEL ALLOVER SELECTIVE SILVER 2Mn MIN SILVER 3-5Mn TIN OVER 2.5Mn NICKEL ALLOVER 2. PRODUCT CONFORMS TO SPECIFICATION P S -9 9020-00 38/39

96-ball FBGA

Contextual Info: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)

Contextual Info: COVER DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization — 32M words × 8 bits × 8 banks (EDJ2108DEBG) — 16M words × 16 bits × 8 banks (EDJ2116DEBG)

Contextual Info: COVER PRELIMINARY DATA SHEET 4G bits DDR3 SDRAM EDJ4204BFBG 1024M words  4 bits EDJ4208BFBG (512M words  8 bits) EDJ4216BFBG (256M words  16 bits) Specifications Features • Density: 4G bits • Organization — 128M words  4 bits 8 banks (EDJ4204BFBG)

Contextual Info: HY5S6B6D L/S F(P)-xE 4Banks x1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Sep. 2003 Preliminary 0.2 Append Super-Low Power Group to the Data-sheet

D3502

Contextual Info: No. 3, Gongye E. 3rd Road, Hsinchu Science Park, Hsinchu 30075, Taiwan TEL：886-3-565-8800 Lextar.com PT30A02 V0 Product Specification No. 3, Gongye E. 3rd Road, Hsinchu Science Park, Hsinchu 30075, Taiwan TEL：886-3-565-8800 Approval Sheet Product Part Number

EDL5132CBMA

Abstract: b008m
Contextual Info: PRELIMINARY DATA SHEET 512M bits Mobile RAM MCP 2 pcs of 256Mb components EDL5132CBMA 16M words x 32 bits Description Pin Configurations The EDL5132CBMA is a 512M bits Mobile RAM MCP (Multi Chip Package) organized as 4,194,304 words × 32 bits × 4 banks, 2 pieces of 256M bits Mobile RAM in

Contextual Info: Data sheet acquired from Harris Semiconductor SCHS286A − October 2003 The CD74AC623 is supplied in 20-lead dual-in-line plastic packages E suffix and in 20-lead small-outline packages (M, M96, and NSR suffixes). The CD74ACT623 is supplied in 20-lead small-outline