BA 159 DIODE Search Results

diode BA 159

Contextual Info: BA 157.BA 159 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V

Contextual Info: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

Contextual Info: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

diode BA 159

Abstract: ba 159 diode BA diode ba capacitance diode ba 157 BA 159 ba 157 diode
Contextual Info: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

diode BA 159

Abstract: in4937
Contextual Info: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g

BA150

Abstract: BA157-BA159 BA158
Contextual Info: BA 157.BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 Plastic Voltage 400 to 1000 V. Current 1.0 A. at 50°C. 6.35 ± 0.2 58.5 min. • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

BA150

Abstract: BA157-BA159 ba158 diode BA 159
Contextual Info: BA 157.BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 Plastic Voltage 400 to 1000 V. Current 1.0 A. at 50°C. 6.35 ± 0.2 58.5 min. • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

BA150

Contextual Info: FAGOR ^ BA 157 BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-IS Plastic -do •■ si s1 Voltage 400 to 1.000 V. C O eri s Current 1.0 A. at S0°C. 6 .3 5 to.a • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point,

BYX58-200

Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Contextual Info: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A

IN4937

Abstract: in 4937 D0201 MR 1501 D0-201AD
Contextual Info: FAGOR^ Fast Recovery Diodes - Quick Guide TYPE FF 1001 to FF 1005 BA - 157 to BA - 159 1P643 to 1P648 IN 4933 to IN 4937 FF 1501 to FF 1510 BY 296 to BY 299 S BY 396 to BY 399 S MR 850 to MR 858 30DF6 CURRENT 1.0 A @ 45 °C 1.0 A @ 50 °C 1.0 A @ 45 °C 1.0 A

ba 540 b

Abstract: 58A2 HVR062 L105 RS-296 BA 157 - 200
Contextual Info: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s DO -15 F - 126 58 A 2 Plastic Dimensions in mm. Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,

fagor ba 159

Contextual Info: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s Dimensions in mm. D O-15 F - 126 58 A 2 Plastic Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,

BY207

Abstract: BA145 mbr120p MBR130P BY206 by338 BA148 BY210 Diode 1N5817 trr diode BA148
Contextual Info: Soft Recovery I q , Average rectified forward current Amperes 0.4 V RRM ^ (Volts) 0.5 0.5 1.0 /C a s e [ 1.0 59-04 < BA157 BY 206 BY210/4 BY330 BY331 BY332 BY334 600 BA158 BY207 BY210/6 BY336 800 1000 I f SM (Amps) T a at Rated BY210/8 15 45 BA 159 15 45

transistor 2TH

Abstract: transistor BA 13 BA157 transistor ba diodes redressement thomson
Contextual Info: S G S-THOMSON 5=10 1• 7 ^ 2 ^ 3 7 a a o a Q T H T O T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS 59C 02092 B A 1 5 7 ,T 4 ' ô J r . ' 3 D ►B A 1 5 9 ,T FA ST RECO VERY RECTIFIER DIODES D IO D E S D E R EDR ES S EM EN T R A P ID E / \ F A S T RECO VERY DIODES

BY407A

Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Contextual Info: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C

FRI57

Abstract: FRi55 fri07 BAI 59 FRi52 BAI 57 BAi58 FRI53 EiC series BA150
Contextual Info: E i e SEUICONDUCTOR INC fe,ÖE D • OQDQOm fl P2 ■ EICS Fast recovery silicon diodes. 1.0 Amp. to 3 Amps. The plastic material carries U /L recognition 94V-0. Type A verage Rectified Current V AV (A) Peak Inverse Voltage V RRM at (°C) Repetitive Peak Forward

esm diodes

Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
Contextual Info: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)

ITT BA159

Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Contextual Info: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case

Contextual Info: 5 i •rt- 1 9 ' i SMD Power Resistors Special Patented design eliminates need for leaded components. 4-terminal • Flexible J-bend terminations (patented eliminate the need for leaded components and reduce the chance of solder-joint break­ age due to thermal expansion and vibration.

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

sis-2 IR

Abstract: mml 600 33T4
Contextual Info: 12 & 25 AMPERE DIODES CONTINENTAL DEVICE INDIA 3SE D • 00DDD2b S "“T" PROFESSIONAL/COMMERCIAL GRADE GENERAL PURPOSE DIODES Device y lN /1 N /IN „ IN /•1N > IN 1N Peak Reverse Voltage Wkg • Vr Volts Max. Peak Reverse Voltage Vrrm Volts 12 12 12

NF 847 G

Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Contextual Info: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W

Contextual Info: SMD Power Resistors Special Patented design eliminates need for leaded components. 4-terminal • Flexible J-bend terminations patented eliminate the need for leaded components and reduce the chance of solder-joint break­ age due to thermal expansion and vibration.

Contextual Info: O H M IT E RW, RP, RF Series Manufacturing Company Surface Mount Power Resistors Description O hm ite has the answ ers in resistor technology for today's expanding usage of surface-m ounted circuitry. O ur line of surface m ount pow er resistors enables engineers to integrate pow er resistors into designs that