B85X Search Results

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD448012-X

Abstract: 12X18 PD448012
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

uPD444012AGY-B70X-MJH-A

Abstract: UPD444012AGY-B55X-MJH-A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT _ ¿¿PD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ^¡PD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

442000L-C12X

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

d44401

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.

uPD4632312F9-BE95X-BT3

Abstract: uPD4632312-X
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

AM 5888

Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
Contextual Info: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 2 L - X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

48-pin TSOP I flash memory

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD448010-X 8M-BIT CMOS STATIC RAM 1M-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448010-X is a high speed, low power, 8,388,608 bits 1,048,576 words by 8 bits CMOS static RAM. The µPD448010-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

PD448012-X

Abstract: Cxxx uPD448012-X NEC marking BX
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The μPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The μPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.

UPD448012GY-B55X-MJH-A

Abstract: uPD448012GY-B70X-MJH
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

PD448012-X

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.