B82 DIODE Search Results
B82 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
B82 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: DIODES INC 35E D Bi SfiMÖTTB DQQQ3S4 H • DII BRIDGE RECTIFIERS STORAGE/OPERATING TEMPERATURE RANGE -55°C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current @ 8.3ms |
OCR Scan |
b1005mb101 | |
DIODE B82
Abstract: MDT 1200 DD50GB60L DD50GB-L B82 diode SANSHA DD50GB40L DD50GB40M DD50GB60M 106c
|
OCR Scan |
dd50gb-ldd50gb40ldd50gb40mdd50gb60l+6 | |
smd JSs
Abstract: smd JSs diode
|
Original |
sk50gb065smd jsssmd jss diode | |
DIODE B82Contextual Info: SK50GAL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ Ka V B- I WS L$ [W V TSS V BP I TKS L$ UUS V B- I JK L$ |
Original |
sk50gal065sk50gar065diode b82 | |
ZENER B18
Abstract: b18 zener
|
Original |
bzx55bzener b18b18 zener | |
BZX55
Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
|
Original |
bzx55bbzx55bzx55-b15zener b27+7 | |
bzx55 024
Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
|
Original |
bzx55bbzx55 024zener b27zener b18+6 | |
BZX55
Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
|
Original |
bzx55bbzx55bzx55-b82zener b18+6 | |
BZX55
Abstract: zener b27 b16 zener b2v4 B20 zener diode glass BZX55B zener BZX 180 b9v1 B2V7
|
Original |
bzx55bdo-34bzx55zener b27+6 | |
diode B61
Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
|
Original |
idt54/74fct162344at/ct/etfct162344at/ct/etmil-std-883so56-1+13 | |
|
Contextual Info: N AMER PHILIPS/DISCRETE bTE D bfc.53131 002 ^ 3 4 T37 APX Philips Components 1 N 5 8 1 7 /1 N 5 8 1 8 /1 N 5 8 1 9 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e F e b ru a ry 1 99 0 Schottky barrier diodes DESCRIPTION Schottky barrier diodes in hermetic |
OCR Scan |
1n5817100k/w1n5817/1n5818/1n58191n5819 | |
diode b81
Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
|
Original |
idt54/74fct162344at/ct/etfct162344at/ct/etmil-std-883so56-1+11 | |
DIODE B82
Abstract: DIODE B34 DIODE B44 B14 DIODE b34 diode SO56-2 diode b83 B82 diode diode b81
|
Original |
idt54/74fct162344at/ct/etfct162344at/ct/etmil-std-883so56-1+12 | |
|
Contextual Info: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 Communication, Control and Measurement Equipment Constant Voltage Regulation • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small surface-mount package, M−FLATTM |
Original |
cmzb68cmzb390 | |
|
|
|||
ON B34
Abstract: DIODE B82 DIODE B34 diode b84 max 3249 DIODE B44 74FCT163344 b84 diode DATASHEET B34 DIODE B23
|
Original |
idt54/74fct163344/a/c250psmil-std-883200pf+13 | |
|
Contextual Info: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small |
Original |
cmzb68cmzb390 | |
DIODE MARKING B82
Abstract: CMZB100 CMZB330 CMZB75
|
Original |
cmzb68cmzb390diode marking b82cmzb100+2 | |
|
Contextual Info: SKM 800GA176D .0 2 RE Q8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .S 2 RE Q8 B8 .S 2 PEH Q8 B8XY Trench IGBT Modules SKM 800GA176D 4;+0 PFHH 7 UVH C .0 2 UH Q8 EWH C PRHH C [ RH 7 PH ^+ .0 2 RE Q8 @VH C .0 2 UH Q8 ``H |
Original |
800ga176d | |
SV-03 diode
Abstract: diode sv 03
|
Original |
200gb176dsv-03 diodediode sv 03 | |
|
Contextual Info: SKM 400GB126D . .0 2 GH I8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .J 2 GH I8 B8 .J 2 LHM I8 LGMM 7 NOM C .03+( 2 PM I8 QQM C @MM C U GM 7 LM Y+ .03+( 2 GH I8 NMM C .03+( 2 PM I8 GOM C @MM C .J 2 LHM I8 GGMM C .03+( 2 GH I8 |
Original |
400gb126d | |
2N3904 A30
Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
|
Original |
2n3904 a302n3904 a522n3904 a272n3904 b28+6 | |
diode u2 a54
Abstract: b34 DIODE schottky b37 diode 6CE3300KX B48 SOD diode b27 SOD-123 a34 WSL20105L000FEA b74 DIODE schottky SOD-123 B34
|
Original |
max5960l80-pinmax5959a/max5959l/max5960a/max5960ldiode u2 a54+9 | |
DIODE B74
Abstract: DIODE ON SEMICONDUCTOR B34 56-PIN diode b73 diode B61 OEX 15 diode
|
Original |
pi74fct162344tpi74fcttsk21ps2047b+6 | |
IDT74LVC16344A
Abstract: LVC16344A
|
Original |
idt74lvc16344alvc16344a | |