B82 DIODE Search Results

Contextual Info: DIODES INC 35E D Bi SfiMÖTTB DQQQ3S4 H • DII BRIDGE RECTIFIERS STORAGE/OPERATING TEMPERATURE RANGE -55°C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current @ 8.3ms

smd JSs

Abstract: smd JSs diode
Contextual Info: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&

DIODE B82

Contextual Info: SK50GAL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ Ka V B- I WS L$ [W V TSS V BP I TKS L$ UUS V B- I JK L$

BZX55

Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

bzx55 024

Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

diode B61

Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bfc.53131 002 ^ 3 4 T37 APX Philips Components 1 N 5 8 1 7 /1 N 5 8 1 8 /1 N 5 8 1 9 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e F e b ru a ry 1 99 0 Schottky barrier diodes DESCRIPTION Schottky barrier diodes in hermetic­

diode b81

Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

DIODE MARKING B82

Abstract: CMZB100 CMZB330 CMZB75
Contextual Info: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small

Contextual Info: SKM 800GA176D .0 2 RE Q8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .S 2 RE Q8 B8 .S 2 PEH Q8 B8XY Trench IGBT Modules SKM 800GA176D 4;+0 PFHH 7 UVH C .0 2 UH Q8 EWH C PRHH C [ RH 7 PH ^+ .0 2 RE Q8 @VH C .0 2 UH Q8 ``H

SV-03 diode

Abstract: diode sv 03
Contextual Info: SKM 200GB176D .0 2 ME N8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 ME N8 B8 .O 2 QEH N8 QFHH 7 M@H C .0 2 RH N8 QRH C UHH C W MH 7 QH [+ .0 2 ME N8 MQH C .0 2 RH N8 Q]H C UHH C .O 2 QEH N8 QQHH C .03+( 2 ME N8 MQH

Contextual Info: SKM 400GB126D . .0 2 GH I8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .J 2 GH I8 B8 .J 2 LHM I8 LGMM 7 NOM C .03+( 2 PM I8 QQM C @MM C U GM 7 LM Y+ .03+( 2 GH I8 NMM C .03+( 2 PM I8 GOM C @MM C .J 2 LHM I8 GGMM C .03+( 2 GH I8

DIODE B74

Abstract: DIODE ON SEMICONDUCTOR B34 56-PIN diode b73 diode B61 OEX 15 diode
Contextual Info: PI74FCT162344T Address/Clock Driver PI74FCT162344T

diode B61

Abstract: b34 diode diode b83 lvc16344a DIODE B82 b84 diode
Contextual Info: IDT74LVC16344A 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O IDT74LVC16344A DESCRIPTION: FEATURES: The LVC16344A is a 1:4 address/clock driver built using advanced dual

diode b34

Abstract: IDT74LVC16344A LVC16344A diode b83 DIODE B44 DIODE B82 b24 DIODE
Contextual Info: IDT74LVC16344A 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O IDT74LVC16344A FEATURES: DESCRIPTION: • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using

Contextual Info: ADVANCE INFORMATION PI74FCT163344 Fast CMOS Address/Clock Driver Product Features: • • • • • • Product Description: Ideal for address line driving and clock distribution Eight banks with 1:4 fanout with 3-state control Typical tSK o output skew < 500 ps

Contextual Info: PI74FCT162344T Fast CMOS Address/Clock Driver Product Features: • • • • • • Product Description: Ideal for address line driving and clock distribution Eight banks with 1:4 fanout with 3-state control Typical tSK o output skew < 500 ps Balanced output drivers: ±24 mA

DIODE ON SEMICONDUCTOR B34

Abstract: NCP1200 CROSS REFERENCE transformer bobbin sectional bobbin LLC N67 transformer core mosfet b38 EE 80 bobbin EI TRANSFORMER LIST EI type bobbin EE CORE
Contextual Info: EBNCP1200/D How to Use the Spreadsheet NCP1200 Discont.xls" By Hector NG ON Semiconductor Singapore Application Engineer Email: hector.ng@onsemi.com http://onsemi.com ENGINEERING BULLETIN This short note describes the necessary steps to efficiently use the NCP1200 design aid file: “NCP1200 Discont.xls”.

DIODE B34

Abstract: DIODE B74
Contextual Info: IDT74FCT162344AT/CT/ET FAST CMOS ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE FAST CMOS ADDRESS/CLOCK DRIVER IDT74FCT162344AT/CT/ET DESCRIPTION: FEATURES: The FCT162344T is a 1:4 address/clock driver built using advanced dual metal CMOS technology. This high-speed, low power device provides the

Contextual Info: 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER WITH BUS HOLD, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - IDT74LVCH16344A ADVANCE INFORMATION The LVCH16344A is a 1 :4 address line driver built using advanced dual metal C M O S technology. This high speed, low power device provides the ability to fanout to memory

b71 DIODE

Abstract: DIODE B34 344C
Contextual Info: IDT74FCT163344A/C 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER IDT74FCT163344A/C DESCRIPTION: FEATURES: The FCT163344 is a 1:4 address/clock driver built using advanced dual metal CMOS technology. This high-speed, low power device provides the

344C

Contextual Info: IDT74FCT163344A/C 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER IDT74FCT163344A/C DESCRIPTION: FEATURES: The FCT163344 is a 1:4 address/clock driver built using advanced dual metal CMOS technology. This high-speed, low power device provides the

Contextual Info: IDT74FCT163344A/C 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER IDT74FCT163344A/C DESCRIPTION: FEATURES: The FCT163344 is a 1:4 address/clock driver built using advanced dual metal CMOS technology. This high-speed, low power device provides the

344C

Contextual Info: IDT74FCT163344A/C 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER IDT74FCT163344A/C FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using