B8116 Search Results

60-A70

Contextual Info: - PRELIMINARY - March 1996 Edition 2.2 Fujrrsu PRODUCT PROFILE SHEET M B 8 1 1 6 1 6 0 A -60/-70 CMOS 1 M X 16BIT FAST PAGE M ODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode D y na m ic RAM The Fujitsu M B8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains

marking code 84L SOT-23

Contextual Info: MEMORY 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM L/-84L/-67L CMOS 4-BANK x 4,194,304-WORD x 4 BIT Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu B81164442A is a CMOS Synchronous Dynamic Rand on* Access Memory SDRAM containing 67,108,864 memory cells accessible in a 4-bit format. The M B81164442A feafu ras a "fully synchronous operation

Contextual Info: MEMORY — — — CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu B8116405A is a fully decoded CMOS Dynamic RAM DRAM that .contains 16,777,216 memory cells accessible in 4-bit increments. The M B8116405A features a “hyper page” naoef&of operation whereby high­

Contextual Info: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 4 Ö O -6 0 /-7 0 /-8 0 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu M B8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216

Contextual Info: MEMORY 1 M x 16 BIT PAGE MODE MB811 6160B-50/-60 AMIGRA CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu B8116160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The M B8116160B features a “fast page” mode of operation whereby high­

Contextual Info: MEMORY CMOS 4 M x 4 BIT HYPER PAGE MODE DYNAMIC RAM B8116405B-50/-60 CM OS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8116405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The M B8116405B features a “hyper page" mode of operation whereby high­

Contextual Info: MEMORY CMOS 1Mx 16 BIT HYPER PAGE MODE DYNAMIC RAM B8116165A-60/-70 CMOS 1,048,576 x 16 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8116165A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The B8116165A features a “hyper page” mode of operation whereby

Contextual Info: - PRELIMINARY - March 1996 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 6 8 0 0 A -60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dy na m ic RAM The Fujitsu M B8116800A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: MEMORY CMOS 4M x 4 BIT HYPER PAGE DYNAMIC RAM B8116405A-60/-70 CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8116405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The M B8116405A features a “hyper page” mode of operation whereby high­

40j2

Abstract: B8117805A-70
Contextual Info: DRAM 3 • DRAM - Normal Voltage Versions (CMOS) Vcc= +5V±10%, T a=0°C to +70°C Organization (Wxb) 4M x4 2M x8 1M x16 Part Number Cycle Time min. (ns) Power Consumption max. (mW) Operating M B8116400A-60 60[15]*1 110[40]*3 412.5 M B8116400A-70 70[17]’1

Contextual Info: cP IITSU May 1997 Revision 1.2 data sheet SDC16UV7284- 67/84/100/125 T-S 128MByte (16Mx 72) CMOS Synchronous DRAM Module General Description The S D C 16U V 7284-(67/84/100/125)T-S is a high performance, 128-m egabtye synchronous, dynamic RAM module organized

Contextual Info: MEMORY CMOS 1 M x 16 BITS HYPER PAGE MODE DYNAMIC RAM B8116165B-50/-60 CMOS 1,048,576 x 16 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu B8116165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The B8116165B features a “hyper page” mode of operation whereby

Contextual Info: FE«? i 6 '553 October 1992 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 6 1 0 1-60/-70/-80 CMOS 16Mx 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu B8116101 is a fully decoded CM O S Dynamic RAM DRAM that contains a total of

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET MEMORY 4 x 5 1 2 K x 32 BIT SYNCHRONOUS DYNAMIC RAM B811643242A-125/-100/-84/-67 CMOS 4-BANK x 524,288-WORD x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu B811643242A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

mb8116400

Abstract: fptn marking AAU f69h
Contextual Info: A p r il _ 1992 E d it io n 2 . 0 A D A T A S H E E T : FUJITSU B8116400-60/-70/-80 CMOS 4M x 4 Bits Fast Page Mode Dynamic RAM The Fujitsu B8116400 is a f ully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells accessible in 4-bit increments. The B8116400

PJ 62

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 05-101 6 5 -1 E MEMORY CMOS 1 M 16BIT FAST PAGE MODE DYNAMIC RAM M B811 6160A-60/70 C M O S 1,048,576 x 16BIT Fast Page Mode Dynamic RAM • d e s c r ip tio n The Fujitsu M B 8 1 161 60 A is a fully d e c o d e d C M O S D ynam ic RAM D R A M th a t con ta in s 16,777,21 6 memory; cells acce ssib le in 1 6 -bit incre me nts.

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM B81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu B81164442A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Q8-DQ15

Contextual Info: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC16UV6484- 67/84/100/125 T-S 128MByte (16M x 64) CMOS Synchronous DRAM Module General Description The SDC16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynamic RAM module organized

Contextual Info: MEMORY 4 x 4 M x 4 BIT . Y NCl-IRON s ous DYNIAMI O K Al. M RR1 IVI DO 1 R 71 L nn/-R 0A t m0 I v U L ./- O '+ L / ¡•7 ti 1 L. . / .mm I Q‘l♦‘dtâH[ O C . t UU/“ CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory

Contextual Info: cP IITSU December 1997 Revision 2.0 data sheet SOB4UL6414- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SOB4UL6414-(67/84/100/125)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as

fujitsu ten ECU

Abstract: MB811
Contextual Info: PRELIMINARY - - Fujrrsu October 1995 Edition 1.1 PRODUCT PROFILE SHEET M B 8116165A - 60/-70 CMOS 1M X 16BIT HYPER PAGE MODE DYNAMIC RAM C M O S 1,048,576 x 16BIT Hyper Page M ode D yn a m ic RAM T h e F u jitsu M B 8 1 1 6 1 6 5 A is a fu lly d e c o d e d C M O S D y n a m ic R A M D R A M th a t co n ta in s

Contextual Info: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM B81164842E-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu B81164842E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL6414- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UL6414-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as

Contextual Info: c P IITSU December 1997 Revision 1.0 data sheet SOB4UV6414- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SOB4UV6414-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as