B7EM24G Search Results
B7EM24G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
T02I
Abstract: 26-PIN ZIP20-P-400 514100B
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msm514100bmsm514100bl304-wordmsm514100b/bl+7 | |
514100AContextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated |
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msm6691themsm6388andthemsm6588themsm6691+6 | |
MSM514800A
Abstract: MSM514800ASL
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msm514800amsm514800aslmsm514800a/asl288-word+2 | |
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Contextual Info: O K I Semiconductor MSM514100A/AL 4,194,304-Word x 1-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology. |
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msm514100a/al304-wordcycles/16mscycles/128ms+1 | |
M6927
Abstract: MSM6927RS MSM6947RS power line carrier communication dc MSM6927 MSM6927GS-2K MSM6927GS-K MSM6947 MSM6947GS-K DE2024
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msm6927msm6947themsm6927themsm6947areoki+10 | |
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Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible. |
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msm56v16160288-word16-bit+2 | |
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Contextual Info: O K I Semiconductor MSC23837A-xxBS18/DS18 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The O K IM SC 23837A -xxBS18/D S18 is a fully decoded 8,388,608-w ord x 36-bit CMOS Dynamic Random A ccess M em ory M odule com posed of eighteen 16-Mb DRAMs 4M x 4 in SOJ packages |
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msc23837a-xxbs18/ds18608-word36-bit3837a+4 |