MEC 1300
Abstract: GI 312 NDL5300 NDL5302 NDL5302L1 NDL5302L2 NDL5310 NDL5312 NDL5314 gi diode
Contextual Info: N E C ELECTRONICS INC b2E D • b4E7S55 0030153 4flb « N E C E DATA SHEET NEC LIGHT EMITTING DIODE NDL5302L2 ELECTRON DEVICE 1 3 0 0 nm O P TICA L F IB E R COM M UN ICATIO N S InGaAsP LIG H T EM ITTING D IO D E DESCRIPTION N D L5302L2 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi
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b4e7s25ndl5302l2gi-50/125ndl5302l1+8ndl5300ndl5302ndl5310ndl5312mec 1300gi 312ndl5314gi diode
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uPD77230
Abstract: SICK RM pd77230
Contextual Info: N E C ELECTRONICS INC Tfi 6427525 N E C D e J LME75B5 OOlt.343 T ELECTRONICS INC 980 16343 D //P D 7 7 2 3 0 ADVANCED s ig n a l p ro c e s s o r N E C Electronics Inc. Z ' o r M a rc h 1988 Description Applications T h e /UPD77230 A d v a n c e d S ig n a l P ro c e s s o r A S P is
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lme75b5upd77230/upd77230b427525+3642752ssick rmpd77230
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MC-422000F32BA-60
Abstract: MC422000F32BA60 MC-422000F32FA-60 MC422000F32FA60 MC422000F32BA70 MC422000F32
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000F32 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-422000F32 is a 2,097,152 words by 32 bits dynamic RAM module on which 4 pieces of 16 M DRAM: /¿PD4218165 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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mc-422000f3232-bitupd4218165c-422000f32-60+9c-422000f32-70l427s25b42752mc-422000f32ba-60mc422000f32ba60mc-422000f32fa-60mc422000f32fa60mc422000f32ba70mc422000f32
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lm575
Abstract: 2SK827 transistor DK RN lm5752 F1012
Contextual Info: N E C ELECTRONICS INC "t û 6427525 N E C ELECTRONICS DEI INC b45755S 98D MOS D O n O O l 19001 F I E L D D E F F E C T ELECTRON DP/ICS 7 | T '- " 17-13 T R A N S I S T O R 2SK827 . F A S T S W I T C H I N G N - C H A N N E L S I L I C O N POW ER MOS F E T
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b4275esq11dd12sk827t-39-13+8lm57525dd11d04js71csj2263slm575transistor dk rnlm5752f1012
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Contextual Info: E C ELECTRONICS INC Tñ D e J b4E7SE5 OOlTlbB 0 | POWER T ^ 3 '2 5 TRANSISTOR ARRA / ¿P A 1 4 5 6 H N PN S IL IC O N EP LOW I T A X I AL -POWER SPEED SWITCHING TRANSISTOR ARRA DARLINGTON DESCRIPTION The ¡1 PA1456H is an array of four darlington power transistors, it is
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SAS 251 B427
Contextual Info: NEC JHPD482444, 482445 4M Video RAM NEC Electronics Inc. Preliminary Information_ September 1994 Description The pPD482444 fast-page and pPD482445 hyper-page video RAMs have a random access port and a serial read/write port. The serial read/write port is connected
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upd482444upd482445ppd482444ppd482445+58192-bit16-bitbm5752sjipd482444sas 251 b427
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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d 6563265612 necl302cmos transmission gate specifications+4nec cmoscmos-5 necopencad cmos block library700-207
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IC-3185B
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / /iPD42$16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D escription The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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upd42s16800lupd4216800lupd42s17800lupd4217800l+716m-bit/jpd42s16800l4216800l42s17800l4217800l//pd42s16800lic-3185b
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