B427S Search Results

PC659

Abstract: IPC659G
Contextual Info: N E C ELECTRONICS INC SEC / ELECTRON DEVICE 30E D • b427S2S G03047b T ■ DATA SHEE-T Preliminary BIPOLAR ANALOG INTEGRATED CIRCUIT / / _ _ _ _ _ Ä / / P C 6 5 9 8 BIT A/D C O N V E R T E R FOR V ID EO P R O C E S S IN G

Contextual Info: 30E » • b427sas ooa^mb i ■ N E C LIGHT EMITTING DIODE ELECTRONICS INC J _ NDL5310P 1 300 nm O PT IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D ESC RIPTIO N NDL5310P is a 1 300 nm InGaAsP double heterostructure LED with fiber pigtail. It can achieve high optical output power

Contextual Info: hEE D • b427SeS GG37473 Ü2T « N E C E LIG H T EM ITTING DIODE N E C NDL4105B ELECTRONICS INC 850 nm O P T IC A L FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE D E S C R IP T IO N N D L 4 1 0 5 B is an A IG a A s double heterostructure lig h t e m ittin g diode.

Contextual Info: bSE D • b427S2S GG37471 257 « N E C E LIGHT EM ITTING DIODE NDL4105A 850 nm O P T IC A L FIBER C O M M U N IC A T IO N A IG aA s LIGH T E M IT T IN G D IO DE N E C ELECTRONICS INC D E S C R IP T IO N N D L 4 1 0 5 A is an AtG aAs light emitting diode, especially designed for an 850 nm light source of optical fiber communications

Contextual Info: 30E D • b427SE5 005^424 fi ■ / N E C ELECTRONICS INC LIGHT EMITTING DIODE NDL5313P 1 300 nm O PT IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D E S C R IP T IO N P A C K A G E D IM E N S IO N S in m illim e te rs

Contextual Info: EC ELECTRONICS INC ST D b427SS5 DDG5S4Ö S T-41-07 I NECE NEC Fiber Optic Devices OD-8363-IDI LED Module 1.3^m OD-8363 is designed to couple LED (Light Emitting Diode) output light to optical fiber through connector. FEATURES APPLICATIONS • High coupling efficiency from LED to

Contextual Info: m I - - N E C - - ELECTRONICS INC .- - 30E D • b427S2S ODaifllD 2 ■ PHOTO INTERRUPTER P S 5002LR PHOTO 1C INTERRUPTER D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit : m m The PS5002LR ph oto in terru p te r m odule is a

Contextual Info: 3GE D • b427S2S GOETMlñ 2 ■ S N E C ‘ E L E C T R O N I C S INC LIGHT EMITTING DIODE /_NDL5311P 1 300 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D ESC RIPTIO N NDL5311P is a 1 300 nm InGaAsP double heterostructure L E D DIP module. It can achieve high optical output power from

Contextual Info: 6427S25 N E C D Ë J b427SES E L E C T R O N IC S DD11DD1 IN C 980 19009 D T - 3 «7-/3 1 |~ M 0S F I E L D E F F E C T T R A .V S I S T C K ELECTRON DP/ICE FAST SW IT C H IN G N - "C H A N N E L S I L I C O N POWER WOS FET PA CK A G E DIMENSIONS Features

SFR450H

Abstract: NEC car radio 4.5-Mhz Murata sfr450h
Contextual Info: • b427S25 00m 4b5 73b HNECEPRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / P C 2 5 3 3 AM TUNER FOR ELECTRONIC-TUNING CAR RADIO The /xPC2533 is an 1C that has been developed as an AM tuner for car stereo and car radio. It employs double superheterodyne configuration of up conversion type (IF1 « 10.71 MHz, IF2 - 450 kHz .

PH302

Abstract: 1206 cms diode led 940nm high power
Contextual Info: 'NEC ELEC TR ONI CS INC 30E D • b427SSS OOETSTT T ■ _ r - t i - œ PH O TO D IO D E PH302 P L A S T IC M O LD E D PIN PHOTO DIO DE D E S C R IP T IO N P A C K A G E D IM E N S IO N S P H 3 0 2 is a p h o to diode with P IN structure. It has a wide photo-receiving

2SK797

Contextual Info: Ôi|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES

11B2 zener diode

Abstract: PA1428H uPA1428H LTNH PWg300 PA142SH c1986
Contextual Info: NEC ELECTRONICS INC Tfl DÊJ b427SSS 0 0 n i 3 1 1 T ^S'^ZS ¿/ P A 1 4 2 8 H NPN SILICON E P I T A X I_AL.'. . P O W E R LOW S P E E D T R A N S I S TOR .ARRA SWITCHING DARLINGTON DESCRIPTION • The ¡i PA1428H is an array of four darlington power tra n s isto rs . I t is

EVCO

Abstract: iPC1861 28 pin sop nec video
Contextual Info: FROH TO ¿eâSflSi&ffltttfi*!» EC SBU NV4560 ’ 92.10. nadia 9 6 :1 5 nouri 01 TOTAL : 8 b427S55 DDSD012 S50 H N E C E P R E L I M IN A R Y P R O D U C T I N F O R M A T I O N NEC B IP O L A R A N A L O G IN T E G R A T E D C IR C U IT ElfCTHOH DEVICE //PCI 861

photo interrupter module

Abstract: PS5002HR
Contextual Info: Ui . N E C ELECTRONICS INC 30E D • b427SS5 OOSISOb 0 ■ T -f1 |-? 3 PHOTO INTERRUPTER PS5002HR PHOTO IC INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS5002HR photo interrupter module is a U n it : m m GaAs Light Emitting Diode coupled to a Si mono­

Contextual Info: N E C ELECTRONICS INC 30E- D • b427S25 002=5000 4 ■ T - W - 73 PHOTO INTERRUPTER _ PS5002LC PHOTO 1C INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS Unit : mm The PS5002LC photo interrupter module is a GaAs Light E m itting Diode coupled to a Si mono­

Contextual Info: N EC ELECTRONI CS INC b2E D • b427S2S DDBflOll OHb M N E C E DATA SHEET NEC LASER DIODE MODULE N D L5604P ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5604P is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo­

11B2 zener diode

Abstract: zener 11B2
Contextual Info: N E C E L E C T R O N I C S INC Tfl D Ë J b427SSS 0 0 n i 3 1 T POWER NPN T ' TRANSISTOR ARRAY ¿¿PA1428H S I L I C O N E P I T A X I_A L . . . P 0 WE R T R A N S I S T O R .A R R A > LOW S P E E D S W I T C H I N G D A R L I N G T O N DESCRIPTION ‘

Contextual Info: b2E » • b427SBS D D 3 7 S n TSM » N E C E N E C ELECTRONICS INC D |Q D E N D L 5061 1 3 1 0 n m OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION N D L5061 is a 1 3 1 0 nm pulsed laser diode especially designed fo r optic a l measurement equ ipm ent O T D R . The DC-PBH

Contextual Info: N E C ELECTRONICS INC b2E D • b427S25 0030107 STb « N E C E DATA SHEET NEC PHOTO DIODE NDL5500 ELECTRON DEVICE 1 000 to 1 600 nm OPTICAL FIBER CO M M U N ICATIO N S 050 InGaAs A V A L A N C H E PH OTO DIODE D ESCRIPTION NDL5500 is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica­

Contextual Info: • b427S55 G[ 43b73 120 «NECE JIPD70731 V805) 32-Bit RISC Microprocessor: Low Power Consumption 16- or 20-MHz Operation NEC NEC Electronics Inc. Preliminary Information October 1993 Description Ordering Information_ The /¿PD70731 (V805 ) is a high-performance, 32-bit

nec 7915

Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
Contextual Info: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to

Contextual Info: NEC ELECTRONICS INC fc.EE D • b427S25 D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­

Contextual Info: N EC ELECTRONICS I NC 30E D • b427S25 GGSTbSB 3 ■ T 'M rt'â T ^ . PHOTO D IO D E PH313 S IL IC O N EPITA XIA L P L A N A R P IN PH O T O D IO D E DET EC T O R for D A D , V D PA CKA G E D IM E N SIO N S Unit : mm 4.5 ±0.4 FEATU RES • • • •