B4113 Search Results

Contextual Info: FUJITSU Decem ber 1988 Ed itio n 3 .0 MAGNETIC DISK HEAD AMPLIFIER The Fu jitsu M B 4 1 11/M B4113 is a m onolithic bipolar integrated circu it opti­ mized fo r high performance application to disk head systems. The M B 41 1 1/M B4113 is featured w ith the follow ing four major functions to

ab4113b

Contextual Info: THIS DOCUMENT CONTANS DATA PROPRETARY TO PROJECTS UNUMITED, INC. ANY USE OR REPRODUCTION. IN ANY FORM, W1HOUT PRIOR WRITTEN PERMISSKM OF PROJECTS UNUMITED. INC. IS PROHIBITED. 2003, Project# Unlimited Inc. REVISIONS LTR SPECIFICATIONS PARAMETERS RESONANT FREQUENCY

Contextual Info: F U J IT S U December 1988 Edition 3.0 MAGNETIC DISK HEAD AMPLIFIER The Fujitsu MB4111/B4113 is a monolithic bipolar integrated circuit opti­ mized for high performance application to disk head systems. The MB4111/B4113 is featured with the following four major functions to

ssi 117

Abstract: MB3857 SSI104 ssi117
Contextual Info: FUJITSU M I C R O E L E CT RO NI CS FU JITSU ll lilBHlllllBli 23E D 374T7ti5 0012033 2 ASSP FLOPPY AND HARD DISK V F O for F D D Device Number Function V C O Free Run Frequency typ VFO 2M H z Supply Voltage V Supply Current typ M B4107 70m A +5± 5 % M B4108

MAGNETIC HEAD

Abstract: MB4U integrated circuit 5238 MB4113 MB4111 MAGNETIC Write HEAD circuit MAGNETIC HEAD circuit 7 pin MB4316 5238 5238 OP/AMP
Contextual Info: FUJITSU MICROELECTRONICS 31E D 3?4ci7b2 ÜGlbCmb T • F M I T S X - Z MB4111 B4113 FU JITSU Decem ber 19 88 E d itio n 3.0 M AGNETIC D ISK HEAD AM PLIFIER The Fujitsu M B 4 1 1 1 / M B 4 1 1 3 is a m onolithic bipolar integrated circuit opti­ mized for high performance application to d isk head systems.

inmos transputer T425

Abstract: T800 B411-8 TRAM IMST800 b008 IMS T800 IMSB008 ims pcb imsb411
Contextual Info: Chapter 20 167 IMS B411 TRAM 3 2 -b it transputer 1 Mbyte Size 1 oímos Engineering Data Reset • Analyse NotError - — < IMS T800 or 1 Mbyte LinkO - >| Linkl IMS T425 DRAM -I Link2 - -Link3 J -Terminated links FEATURES GENERAL DESCRIPTION

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)