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    Panasonic Electronic Components

    Panasonic Electronic Components EEU-EB1E221SB

    Cap Aluminum Lytic 220uF 25V 20% (8 X 11.5mm) Radial 5mm 125mA 5000h 105°C Ammo
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    Master Electronics EEU-EB1E221SB 5,004
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    TTI EEU-EB1E221SB Ammo Pack 2,000 1,000
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    Panasonic Electronic Components EEU-EB1E221SJ

    Cap Aluminum Lytic 220uF 25V 20% (8 X 11.5mm) Radial 3.5mm 125mA 5000h 105°C Bulk
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    Master Electronics EEU-EB1E221SJ 4,000
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    Newark EEU-EB1E221SJ Bulk 2,000
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    Panasonic Electronic Components EEU-EB1E221S

    Cap Aluminum Lytic 220uF 25V 20% (8 X 11.5mm) Radial 3.5mm 125mA 5000h 105°C Bulk
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    Master Electronics EEU-EB1E221S 684
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    Newark EEU-EB1E221S Bulk 2,000
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    RS EEU-EB1E221S Bulk 1,600 3 Weeks 1
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    TTI EEU-EB1E221S Bulk 1,200 100
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    Panasonic Electronic Components EEE-HB1E221AP

    Cap Aluminum Lytic 220uF 25V 20% (10 X 10.2mm) SMD 190mA 2000h 105ƒA€A°C Automotive T/R
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    Master Electronics EEE-HB1E221AP
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    TTI EEE-HB1E221AP Reel 500 500
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    Panasonic Electronic Components EEE-HB1E221P

    Cap Aluminum Lytic 220uF 25V 20% (10 X 10.2mm) SMD 190mA 2000h 105ƒA€A°C Automotive T/R
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    Master Electronics EEE-HB1E221P
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    B1E2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    403D

    Abstract: MBRA120ET3
    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3mbra120et3/d403d PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan
    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    2N3800

    Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
    Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­


    OCR Scan
    29b52595f1352595f092n3800germanium+8diode germanium tu 38 e2n4051 motorola2n42802n39801n3492mc710f2n42762n3817 PDF

    403D

    Abstract: MBRA120ET3
    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3r14525mbra120et3/d403d PDF

    aff11

    Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2234563781 9A6B17B21 CDB271 EF19AAA1 233271 9A6B17BD1 CDB271 FA151CDB71 723A3221 9A612B71 CDB21 4A1 !A1 1 2!C23456728


    Original
    1234567895abc5def9a6b17b21cdb2719a6b17bd1+61cdb719a612b71cdb21123456789a88b889bcd4e6fdc34dd6888b88aff11 PDF

    INCOMING RAW MATERIAL INSPECTION

    Abstract: smd led 5050 0.5 w datasheet INCOMING RAW MATERIAL INSPECTION procedure uei310 smd led 5050 datasheet smd 6 led 5050 datasheet airgap Vs Al Value in Ferrite Core TOROIDS Design Considerations smd led 5050 smd transistor A6t
    Contextual Info: Soft Ferrites THOMSON-CSF PASSIVE COMPONENTS A Committed International Strategy “Provide worldwide an innovative range of components and effective solutions focused on the needs of customers and the evolution of market applications.” “Ensure the growth of the company and the satisfaction of shareholders


    Original
    incoming raw material inspectionsmd led 5050 0.5 w datasheetincoming raw material inspection procedureuei310+6smd led 5050 datasheetsmd 6 led 5050 datasheetairgap vs al value in ferrite coretoroids design considerationssmd led 5050smd transistor a6t PDF

    dmbra120et3

    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3dmbra120et3 PDF

    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3mbra120et3/d PDF

    4593

    Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PR O JEC TIO N THIS DRAWING IS UNPUBLISHED COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL LÛC ,1 9 INTERNATIO NAL RIG H T5 G RESERVED. D IS T R EVISIO N S 14 ZONE LTR D ES C R IPTIO N R E V . RDRW. 8 SM PKG


    OCR Scan
    b-152il-t-10727amp26463us128a+4dept1123dwg112315trand4593 PDF

    D49E

    Abstract: C886 2A E09A 81aa s m b692 B088 k B688 A992 D882 p01 b882 e09a
    Contextual Info: 字符叠加器芯片EA200 济南怡安科技有限公司 ————————————————————————————————————————————— 通用字符叠加器芯片 EA200 技术说明书 一产品特性


    Original
    ea200d49ec886 2ae09a 81aa+7s m b692b088k b688a992d882 p01b882e09a PDF

    SMA CASE 403D-02 footprint

    Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3gmbra120et3/dsma case 403d-02 footprint PDF

    Contextual Info: MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120enrvba120embra120et3/d PDF

    B1E2

    Abstract: 403D
    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3b1e2403d PDF

    Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    mbra120et3gmbra120et3/d PDF

    72d9

    Contextual Info: 2&' 1 1 62E61 1 1 1 36D"5391 23435671839A5BCDBE41 13 13 13 13 13 13 13 13 13 13 13 343 33D441234F3 3434! "4


    Original
    111234516789ab9cd4891ea9f397d845123435671839a5bcdbe411234561789ab4cbde4f+7d441234f3249bb464d62311234561789ab4574988d738e1fc72d9 PDF