B1E2 Search Results
B1E2 Price and Stock
Panasonic Electronic Components EEU-EB1E221SBCap Aluminum Lytic 220uF 25V 20% (8 X 11.5mm) Radial 5mm 125mA 5000h 105°C Ammo |
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EEU-EB1E221SB | 5,004 |
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EEU-EB1E221SB | Ammo Pack | 2,000 | 1,000 |
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Panasonic Electronic Components EEU-EB1E221SJCap Aluminum Lytic 220uF 25V 20% (8 X 11.5mm) Radial 3.5mm 125mA 5000h 105°C Bulk |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EEU-EB1E221SJ | 4,000 |
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EEU-EB1E221SJ | Bulk | 2,000 |
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Panasonic Electronic Components EEU-EB1E221SCap Aluminum Lytic 220uF 25V 20% (8 X 11.5mm) Radial 3.5mm 125mA 5000h 105°C Bulk |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EEU-EB1E221S | 684 |
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EEU-EB1E221S | Bulk | 2,000 |
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EEU-EB1E221S | Bulk | 1,600 | 3 Weeks | 1 |
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EEU-EB1E221S | Bulk | 1,200 | 100 |
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Panasonic Electronic Components EEE-HB1E221APCap Aluminum Lytic 220uF 25V 20% (10 X 10.2mm) SMD 190mA 2000h 105ƒA€A°C Automotive T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EEE-HB1E221AP |
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EEE-HB1E221AP | Reel | 500 | 500 |
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Panasonic Electronic Components EEE-HB1E221PCap Aluminum Lytic 220uF 25V 20% (10 X 10.2mm) SMD 190mA 2000h 105ƒA€A°C Automotive T/R |
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EEE-HB1E221P |
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B1E2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
403D
Abstract: MBRA120ET3
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Original |
mbra120et3mbra120et3/d403d | |
1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
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OCR Scan |
27tfc1n5438tfc 56302n5161+7 | |
2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
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OCR Scan |
29b52595f1352595f092n3800germanium+8 | |
403D
Abstract: MBRA120ET3
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Original |
mbra120et3r14525mbra120et3/d403d | |
aff11Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2234563781 9A6B17B21 CDB271 EF19AAA1 233271 9A6B17BD1 CDB271 FA151CDB71 723A3221 9A612B71 CDB21 4A1 !A1 1 2!C23456728 |
Original |
1234567895abc5def9a6b17b21cdb2719a6b17bd1+6 | |
INCOMING RAW MATERIAL INSPECTION
Abstract: smd led 5050 0.5 w datasheet INCOMING RAW MATERIAL INSPECTION procedure uei310 smd led 5050 datasheet smd 6 led 5050 datasheet airgap Vs Al Value in Ferrite Core TOROIDS Design Considerations smd led 5050 smd transistor A6t
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Original |
incoming raw material inspectionsmd led 5050 0.5 w datasheetincoming raw material inspection procedureuei310+6 | |
dmbra120et3Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
mbra120et3dmbra120et3 | |
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Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
mbra120et3mbra120et3/d | |
4593Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PR O JEC TIO N THIS DRAWING IS UNPUBLISHED COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL LÛC ,1 9 INTERNATIO NAL RIG H T5 G RESERVED. D IS T R EVISIO N S 14 ZONE LTR D ES C R IPTIO N R E V . RDRW. 8 SM PKG |
OCR Scan |
b-152il-t-10727amp26463us128a+4 | |
D49E
Abstract: C886 2A E09A 81aa s m b692 B088 k B688 A992 D882 p01 b882 e09a
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Original |
ea200d49ec886 2ae09a 81aa+7 | |
SMA CASE 403D-02 footprintContextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
mbra120et3gmbra120et3/dsma case 403d-02 footprint | |
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Contextual Info: MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
mbra120enrvba120embra120et3/d | |
B1E2
Abstract: 403D
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Original |
mbra120et3b1e2403d | |
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Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
mbra120et3gmbra120et3/d | |
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72d9Contextual Info: 2&' 1 1 62E61 1 1 1 36D"5391 23435671839A5BCDBE41 13 13 13 13 13 13 13 13 13 13 13 343 33D441234F3 3434! "4 |
Original |
111234516789ab9cd4891ea9f397d845123435671839a5bcdbe411234561789ab4cbde4f+7 | |