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    Mallory Sonalert Products Inc PB-12N23P-03Q

    Audio 2VDC 5VDC 30mA 3VDC 85dBA 1700Hz to 2700Hz Through Hole Radial Tube
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    Master Electronics PB-12N23P-03Q 1,500
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    Mouser Electronics PB-12N23P-03Q 1,696
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    Mallory Sonalert Products Inc PB-12N23MPW-03Q

    Buzzer - Indicator Internally Driven - Magnetic - 3V 50mA - 2.3kHz - 85dB @ 3V 10cm - PC Pins - Through Hole.
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    Master Electronics PB-12N23MPW-03Q 588
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    Mallory Sonalert Products Inc PB-12N32MP-05AQ

    Audio Indicator Piezo 3VDC 7VDC 50mA 5VDC 85dBA 2800Hz to 3600Hz Through Hole Pin Bulk
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    Master Electronics PB-12N32MP-05AQ 160
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    Mouser Electronics PB-12N32MP-05AQ 1,488
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    Master Electronics 70S2-07-B-12-N 34
    • 1 $58.00
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    ITT Interconnect Solutions M83513/04-B12N

    Microminiature rectangular connector per MIL-DTL-83513 specification with 15 contacts and no mounting hardware.
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    Master Electronics M83513/04-B12N 25
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    Onlinecomponents.com M83513/04-B12N 25
    • 1 $152.02
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    PEI Genesis M83513/04-B12N
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    B12N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MAX5874

    Abstract: MAX5876 MAX5877 MAX5877EGK-D MAX5878 MAX5878EVKIT qfn 10mm land pattern
    Contextual Info: KIT ATION EVALU E L B AVAILA 19-3632; Rev 2; 3/07 14-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS Inputs CMOS MAX5876 12 250 LVDS MAX5877 14 250 LVDS MAX5878 16 250 LVDS B9P B10N B9N B8P B8N B7P B7N B6P B6N DVDD1.8 B5P B5N B4P B4N B3P B3N B2N


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    14-bit250mspsmax5877egk-dg6800-4+7max5877egkmax5877max5874max5876max5878max5878evkitqfn 10mm land pattern PDF

    MAX5886

    Abstract: MAX5887 MAX5887EGK MAX5888 transistor b9n
    Contextual Info: 19-2777; Rev 0; 4/03 3.3V, 14-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 30MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 61MHz


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    14-bit500msps76dbc30mhz+10-85dbc10mhz61mhz130mw68-leadmax5886max5887max5887egkmax5888transistor b9n PDF

    Contextual Info: 19-2777; Rev 2; 12/03 3.3V, 14-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 30MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 61MHz


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    14-bit500mspsmax588776dbc+230mhz230mw PDF

    Contextual Info: KIT ATION EVALU E L B AVAILA 19-3632; Rev 2; 3/07 14-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS Inputs CMOS MAX5876 12 250 LVDS MAX5877 14 250 LVDS MAX5878 16 250 LVDS B9P B10N B9N B8P B8N B7P B7N B6P B6N DVDD1.8 B5P B5N B4P B4N B3P B3N B2N


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    14-bit250mspsmax587775dbc+216mhz287mw PDF

    MAX5886

    Abstract: MAX5887 MAX5887EGK MAX5888
    Contextual Info: 19-2777; Rev 2; 12/03 3.3V, 14-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 30MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 61MHz


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    14-bit500msps76dbc30mhz+9-85dbc10mhz61mhz130mw68-leadmax5886max5887max5887egkmax5888 PDF

    Contextual Info: 19-2726; Rev 1; 2/03 3.3V, 16-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 40MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 73dB at fOUT = 61MHz ♦ 2mA to 20mA Full-Scale Output Current


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    16-bit500mspsmax588876dbc+240mhz250mw PDF

    MAX5874

    Abstract: MAX5876 MAX5877 MAX5877EGK-D MAX5878 MAX5878EVKIT
    Contextual Info: KIT ATION EVALU E L B AVAILA 19-3632; Rev 1; 1/06 14-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS Inputs CMOS MAX5876 12 250 LVDS MAX5877 14 250 LVDS MAX5878 16 250 LVDS B9P B10N B9N B8P B8N B7P B7N B6P B6N DVDD1.8 B5P B5N B4P B4N B3P B3N B2N


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    14-bit250mspsmax5877egk-dg6800-4+7max5877egkmax587710x10x0max5874max5876max5878max5878evkit PDF

    d11 1117

    Abstract: 8C722 Z111
    Contextual Info: 11111 1 234567879A4BC 123445678 1 234567375189AB8CCDE F1B118B1BA 1  !D"# 1 $ #%8D%&'1 •1 &5'7%95141 54B1 *!3*541A+67,A79'1 ·1 -9+.145/.59,B011 11.9A859A614B'A60112311F1231 11#55459,51-9+.0112311 1231


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    234567879a4bc234567375189ab8ccde9a617911178f123191+9f1231914a88ae12314514a9f19cf84f8c91d11 11178c722z111 PDF

    diode b12

    Abstract: STD110
    Contextual Info: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS VDD = 3.3 ± 0.3V, TA = -40 to 85°C, VEXT = 5 ± 0.25V In case of 5V tolerant


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    std110diode b12 PDF

    B12NK80Z

    Contextual Info: B12NK80Z-S N-CHANNEL 800V - 0.65Ω - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET TYPE B12NK80Z-S • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.75 Ω 10.5 A 190 W TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    stb12nk80z-sb12nk80z PDF

    P12NK80

    Abstract: VDD400 w12nk80z B12NK80Z stw12nk80z p12nk80z W12NK80
    Contextual Info: B12NK80Z STP12NK80Z - STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH MOSFET General features VDSS Type B12NK80Z STP12NK80Z STW12NK80Z Package RDS on 800 V <0.75 Ω 800 V <0.75 Ω 800 V <0.75 Ω ID Pw 10.5 A


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    stb12nk80zstp12nk80zstw12nk80zo220-d+9pak-to247o-220o-247p12nk80vdd400w12nk80zb12nk80zp12nk80zw12nk80 PDF

    p12nm50n

    Abstract: B12NM50 f12nm50n B12NM50N P12NM50
    Contextual Info: STP12NM50N - STF12NM50N B12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 Ω - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmesh MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID B12NM50N STD12NM50N STF12NM50N


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    stp12nm50nstf12nm50nstb12nm50nstd12nm50n+7o-220/fp/d2pak/dpako-220p12nm50nb12nm50f12nm50nb12nm50np12nm50 PDF

    w12nk80z

    Abstract: p12nk80z stw12nk80z b12nk80z STB12NK80Z STB12NK80ZT4 STP12NK80Z
    Contextual Info: STP12NK80Z - B12NK80Z STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK80Z B12NK80Z STW12NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 0.75 Ω < 0.75 Ω < 0.75 Ω


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    stp12nk80zstb12nk80zstw12nk80zo-220+5o-247w12nk80zp12nk80zb12nk80zstb12nk80zt4 PDF

    EN60252

    Abstract: marking code b38 SMD 0.22 micro farad 275vac icel pmb EN134200 B38 diode smd b20am ICEL phc 0825 5c 0102 MKP EN60252
    Contextual Info: MPL Metallized polypropylene film capacitor MKP - Precision capacitor Main applications: Filtering, timing, integrating circuits, high performance and high precision circuits. Low pulse operation. Dielectric Polypropylene Electrodes Vacuum deposited metal layers


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    din400401000pfen60252marking code b38 smd+80.22 micro farad 275vacicel pmben134200b38 diode smdb20amicel phc0825 5c 0102mkp en60252 PDF

    DIN41426

    Abstract: MKP EN60252 marking code b38 SMD DIN40040 DIN44122 IEC60063 B14-Rated MPL163 polypropylene capacitors KP MKP icel
    Contextual Info: 2000-11-02 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 65-455-03 Kond 1000pF 1% 630VDC MKP 65-455-29 Kond 1500pF 1% 630VDC MKP 65-455-45 Kond 2200pF 1% 630VDC MKP 65-455-60 Kond 3300pF 1% 630VDC MKP


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    1000pf630vdc1500pf2200pf+123300pf4700pfdin41426mkp en60252marking code b38 smddin40040din44122iec60063b14-ratedmpl163polypropylene capacitors kpmkp icel PDF

    P12NK80Z

    Abstract: W12NK80Z W12NK80 JESD97 STB12NK80Z STP12NK80Z STW12NK80Z B12NK80Z b12nk8 P12NK
    Contextual Info: B12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH MOSFET General features Type VDSS RDS on (@Tjmax) ID PW B12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W


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    stb12nk80zstp12nk80zstw12nk80zo-220+8o-247p12nk80zw12nk80zw12nk80jesd97b12nk80zb12nk8p12nk PDF

    P12NK80

    Abstract: w12nk80z W12NK80 p12nk80z W12NK STP12NK80Z P12NK b12nk8 JESD97 STB12NK80Z
    Contextual Info: B12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET Features Type VDSS RDS on (@Tjmax) ID PW B12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W 3


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    stb12nk80zstp12nk80zstw12nk80zo-220+9o-247p12nk80w12nk80zw12nk80p12nk80zw12nkp12nkb12nk8jesd97 PDF

    215730

    Contextual Info: Index by P a rt N u m b e r Index Part* Type pg Part# Type 01.0001 B2N 215 02.0014 BL30N 216 050204 SP10AR-N/35 223, 257 08.0111 Mu 0.8d/M20 312 01.0002 B3N 215 02.0015 BL35N 216 050205 SP10AR-N/50 223,257 08.0112 Mu 0.8d/M24x2 312 01.0003 B4N 215 BL40N 216


    OCR Scan
    bl30nsp10ar-n/358d/m20bl35n+7sp10ar-n/508d/m24x2bl40nsp14ar-n/50bl45nsp14ar-n/70215730 PDF

    j222

    Abstract: MAX5887EGK-D MAX5887EVKIT MAX5888 MAX5888EGK-D MAX5888EVKIT MAX5886 MAX5886EGK-D MAX5886EVKIT MAX5887
    Contextual Info: 19-0581; Rev 0; 6/06 MAX5886/MAX5887/MAX5888 Evaluation Kits The MAX5886/MAX5887/MAX5888 evaluation kits EV kits are fully assembled and tested circuit boards that contain all the components necessary to evaluate the performance of the MAX5886 (12-bit), MAX5887 (14bit), and MAX5888 (16-bit), 500Msps, current-output,


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    max5886/max5887/max5888max588612-bitmax5887+1114bitmax588816-bit500mspsj222max5887egk-dmax5887evkitmax5888egk-dmax5888evkitmax5886egk-dmax5886evkit PDF

    inverter PURE SINE WAVE schematic diagram

    Abstract: sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor
    Contextual Info: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


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    mdl110std110inverter pure sine wave schematic diagramsine wave inverter schematic ivt hs 400+8pure sine wave inverter schematic diagramsine wave inverter using picschematic diagram ac-dc invertertda 12155r 43661 phase pure sine wave inverter schematicoa31 diodecl-21 capacitor PDF

    qfn 10mm land pattern

    Abstract: MAX5874 MAX5876 MAX5877 MAX5878 MAX5878EVKIT wcdma baseband
    Contextual Info: KIT ATION EVALU E L B AVAILA 19-3632; Rev 0; 4/05 14-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS Inputs ♦ 250Msps Output Update Rate ♦ Noise Spectral Density = -160dBFS/Hz at fOUT = 16MHz ♦ Excellent SFDR and IMD SFDR = 75dBc at fOUT = 16MHz to Nyquist


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    14-bit250msps-160dbfs/hz16mhz+1175dbc71dbc80mhz-87dbcqfn 10mm land patternmax5874max5876max5877max5878max5878evkitwcdma baseband PDF

    Contextual Info: KIT ATION EVALU E L B AVAILA 19-3632; Rev 2; 3/07 14-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS Inputs CMOS MAX5876 12 250 LVDS MAX5877 14 250 LVDS MAX5878 16 250 LVDS B9P B10N B9N B8P B8N B7P B7N B6P B6N DVDD1.8 B5P B5N B4P B4N B3P B3N B2N


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    14-bit250mspsmax587775dbc+216mhz287mw PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    power247tm500w transistor audio amplifierin5822 diodeirfs6408+7220v ac to 9v dc converter circuitdc 48v ac 220v 500w smpsp-channel mosfet 800vsb550 transistordrive motor 10a with transistor p channel mosfetp channel 600v 20a igbtlist of n channel power mosfet PDF

    MAX5886

    Abstract: MAX5887 MAX5888 MAX5888AEGK MAX5888EGK
    Contextual Info: 19-2726; Rev 3; 12/03 3.3V, 16-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 40MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 73dB at fOUT = 61MHz


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    16-bit500msps76dbc40mhz+10-85dbc10mhz61mhz130mw68-leadmax5888aegkmax5886max5887max5888max5888egk PDF