B111S Search Results

Contextual Info: ADVANCE MT4 L C1M16CX S 1 MEG X 16 DRAM IURN blllSHT I3004b21 4HT p ilC R O N MICRON TECHNOLOGY INC SSE » DRAM X 1 6 D R A M m 1 M E G 5.0V SELF REFRESH (MT4C1M16CX S) 3.0/3.3V, SELF REFRESH (MT4LC1M16CX S) FEATURES PIN ASSIGNMENT (Top View) • Self Refresh, ie "Sleep Mode"

Contextual Info: r7* O > 0 rs# N K MOUNTING DIMENSIONS FOR P.C.BOARD) ^ 27. 9*°.is ^ > cnotesì I O P/N *0.IS T.6 ^ ts f P.C.fi. THICKNESS,1.6 3 l.S S L m , 2. A A P/N 2 — 77 2 4 9 7 — 7 3-7 72497-7 J3 ±0. T < TOLERANCES, ±0.1 3 4.6 S-S^QUIF*], I^*caoMAx.r £ 1— t

samco

Contextual Info: niCRON SEMICONDUCTOR INC blllSMT D0Q7flbü 7E3 • U R N b3E D ADVANCE MT4 L C1 M 16C3/5/6/7 1 MEG X 16 W ID E DRAM I^i i c r o n WIDE DRAM 1 MEG 16 DRAM X 5.0V FAST-PAGE-MODE (MT4C1M16C3/5/6/7) 3.0/3.3V, FAST-PAGE-MODE (MT4LC1M16C3/5/6/7) FEATURES • Industry-standard xl6 pinouts, timing, functions

B1122

Contextual Info: 1G.9 -7 ' ' >- h ip M O U N TIN G D IM E N S IO N S F O R P . C . B O A R D ) O ( Cl 9. 2D ±0.13 C23.2) 16.2 C3) : ±0.1) (TOLERANCE, 3 O ] ” } cc ILU CNON ACCUMULATE FITCH TOLERANCE} £0.3 5 1 .1 A E E J : 2 Üfi, Æ 3 75 r> "7* ^ b âfeT/S I 1 .6 m m

Contextual Info: r i ¿ 0 .5 o 1 8 .5 10 QO PC 10.3 7 U r* r— C N 2 aO. 3 \ BOARED DI ME N SI ON h â E fÆ ra -frj-:* : _ T ! 5 3 .5 _ 2- 0 2 . 4 , . Ci t l & 3 : 1 2. W : . 6 * 0 . , S ± 0 .1 2 - 0 3 . 2 •X, 7 . 3 5 - — 1-41-4I Í 3 .5 & jj- 7 1 2 .5 16 O r-f

Contextual Info: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)

74146

Abstract: C555 C2135
Contextual Info: 8 *0.5 O ( 2 1 . IB.7 1 * 2 N Ul 1— i I 1 .8 5 *0.3 2 -0 2 . 4 1 o a : i— i ÜJ z D ta t Œ 57.1 M C5.55) M 6 2.5X9= 22.5 2.5X7=17.5 2 .5 C f 5 .5 5 36-01 2 .5(fcT (PITCH) (P l TCH) C2-13.5) 0 <D <D (D O < 1 1 1 1 9 1 0 -1 0 1 O1 <!> 0 (P a> 1 O I *0 .3

5C6401

Contextual Info: MICRON SEMICONDUCTOR INC b?E D • b!1154T DDDTBlfl flflfi B M R N unCRCHSI c^ MT,5g640l 64K X 1 SRAM SRAM 64K X 1 SRAM PIN ASSIGNMENT Top View • High speed: 9,10,1 2 ,1 5 , 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% pow er supply

Contextual Info: MICRON SEMICONDUCTOR INC b?E D • b 1 1 1 5 MT 000^7=57 711 ■ MRN OBSOLETE JUNE 94 D18A 512K X 8, 256K X 16 DRAM DIE M IC R O N B SEMiCONO'JCTOa INC. 512Kx8, 256Kx16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A GENERAL PHYSICAL SPECIFICATIONS • • •