B-35 TRANSISTOR Search Results

FO-102

Abstract: ODU microwave PZB16050U
Contextual Info: 70 RF/Microwave Devices M icrow ave Transistors, Continuous Power Package Outline Pi 111 _ Type No. cont. f (GHz) Gp (dB) (%) 8 8.5 8 7 6.8 7 5.6 6 7 45 45 45 45 35 35 35 35 40 tie CLASS B, HIGH POWER (cont.) PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U

IF3602

Abstract: transistor b35 B-35 transistor NJ3600L 03nv B35 equivalent
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-35 B-35 01/99 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current

EIA-530A

Abstract: RS-449 SP322
Contextual Info: SP322 Programmable V.11/V.35 Transceiver 36 34 35 37 38 39 40 41 42 1 33 2 32 3 31 4 30 5 29 28 6 SP322 7 8 27 26 22 21 20 19 18 17 T1OUT a T1OUT(b) GND VCC T2OUT(a) T2OUT(b) GND VCC T3OUT(a) T3OUT(b) GND V.11/V.35 V.11_TERM SD VCC C1+ VDD C2+ GND C1–

EIA-530A

Abstract: RS-449 SP322
Contextual Info: SP322 Programmable V.11/V.35 Transceiver 36 34 35 37 38 39 40 41 42 1 33 2 32 3 31 4 30 5 29 28 6 SP322 7 8 27 26 22 21 20 19 18 17 T1OUT a T1OUT(b) GND VCC T2OUT(a) T2OUT(b) GND VCC T3OUT(a) T3OUT(b) GND V.11/V.35 V.11_TERM SD VCC C1+ VDD C2+ GND C1–

2N3440 MOTOROLA

Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min

ta-12 stancor

Abstract: B20000 Ta57 stancor
Contextual Info: I M P E D A N C E M A T C H I N G T R A N S F O R M E R S Transistor Transformers Style B STANCOR PART Sec. NUMBER Style A Impedance Ohms Pri. Sec. TAPC-35 B TAPC-38 B 500 C.T. TA-21 C 500 C.T. TA-35 C TA-38 C 500 C.T. B TA-3 A 100 C TA-42 A 500 C.T. TA-52

MRA1014-35

Abstract: MRA1014
Contextual Info: MRA1014-35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .320 SQ 2L FLG The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. C B FEATURES: • Diffused Ballast Resistors.

Q62702-U112

Abstract: Q62901-B11-A Q62901-B50 transistor 7g
Contextual Info: Nicht für Neuentwicklung ISIPN-Silizium-Leistungstransistor B U Y 35 BUY 35 ist ein einfachdiffundierter NPN-Silizium-Leistungs-Transistor im Gehäuse 3 A2 DIN 41 872 TO-3 . Der Transistor eignet sich besonders für den Einsatz als Schalter bei höheren Spannungen.

PN4416

Abstract: BH RV transistor PN4416A
Contextual Info: Philips Semiconductors B i b b 5 3 ^ 31 □ D 5 0 7 3 b 0 3 M A P X N-channel field-effect transistor PN4416; PN4416A AMER PHIL IPS/DISCRETE FEATURES Product specification b?E QUICK REFERENCE DATA MIN. MAX. UNIT PN4416 - 30 V PN4416A - 35 V Idss drain current

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

STA5050

Abstract: STA3878 2n389 2N3054 2N3441 STA3879 STC40250 STC40310 STC40312 STC40324
Contextual Info: Silicon power transistors NPN TO-66 = 1.0 to 7.0 A Type# 2N3054 STC40250 STC40310 STC40312 STC40316 STC40324 Typical Values VcEOISUS Volts) 55 40 35 60(Vcer) 40(Vcer) 35 @ Ic/VcE (Min-Max @ A/V) Vbe @ Ic/VcE (V @ A/V) VcE(SAT) @ Ic/ I b (V @ A/A) fT = 0.75 to 60 MHz

KD22450510

Abstract: kd2245 kd221K 3150 transistor
Contextual Info: Z ^ b ¿ l POWEREX INC 50 Amperes 4 5 0 /1 OOO Volts T b P E |7 B ^ b g l 0000^55 1 W ^ r T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max 80 ± 0 .5

Contextual Info: TABLE OF CONTENTS A ADAPTERS, B N C . 70 ALLIGATOR C L IP S . 35 AUDIO J A C K S . 68 AUTOMOTIVE BLADE FUSE CLIPS & H O LD ERS. 28 B BATTERY CONTACTS & CLIPS

VN0540

Contextual Info: VN0540 E – ET L O S B O – VN0535 VN0540 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 350V 35Ω 250mA VN0535N2 VN0535N3 VN0535ND 400V 35Ω 250mA —

J425

Abstract: 15J20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F1002M A M R F1002M B The RF Line M icrowave Pulse Power Transistors . . . designed for Class B and C common base am plifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTA1505S KTC3876S hFE CLASSIFICATION Marking 24
Contextual Info: SEMICONDUCTOR KTA1505S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌComplementary to KTC3876S. H 1 P Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

hFE CLASSIFICATION Marking 24

Abstract: KTA1505S KTC3876S
Contextual Info: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌComplementary to KTA1505S. H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage

KTA1505S

Abstract: KTC3876S
Contextual Info: SEMICONDUCTOR KTA1505S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Excellent hFE Linearity ・Complementary to KTC3876S. H 1 P Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

PT 1132

Abstract: LF400A STA335A
Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A

LF400A

Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A

Contextual Info: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR TOM9331 TOM9331, 4 Pin TO-8 T4 TON9331, 4 Pin Surface Mount (SM3) B X09331, Connectorized Housing (H1) 1725-1790 M H z Features • ■ ■ ■ Low Noise Bipolar Transistor Linear Tuning Operating Case Temp. -35 °C to + 60 °C

transistor BUZ 40

Abstract: C67078-S1305-A4
Contextual Info: SIPMOS Power Transistor BUZ 40 B ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 40 B 500 V 8.5 A 0.8 Ω TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 35 ˚C

LAS6330

Abstract: LAS6331P1 6330 LAS6331 24v to 5V 3A converter LAS6330P1 6331P1 6330A LAS63
Contextual Info: A LAMBDA SWITCHING REGULATORS LAS 6330 SERIES 3 AMP SWITCHING REGULATORS ABSOLUTE MAXIMUM RATINGS PA RA M ET ER SY M B O L M A X IM U M UNITS Volts 35 O utput Collector Voltage C0 35 Volts Power Dissipation Pd Internally Limited Watts I I Control C ircuit Voltage

LF400A

Abstract: STA335A 10T25 IC 122
Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A