B T415 Search Results

SPS140

Abstract: SIPT640 8T68A HIT640 td615 3TB60 IS020 td510 HIS240 T106D
Contextual Info: PART NUMBER INDEX .PG. DEVICE 3 S A 3 0 .44 3 S A 4 5 .44 3 S A 7 0 .44 3 S B 3 0 .44 3 S B 4 5 .44 3 S B 7 0 . . . 44

dual photodiode

Abstract: VTB6060B Photodiodes 6061 vactec VTB6061B
Contextual Info: 5bE T> 3D3DbD^ DOOlOHb 177 H V C T VTB Process Photodiodes V T B 6 0 6 0 B , 6061 B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­

photoe

Contextual Info: TO S H I B A -CLOGIC/nEMORY} 9097248 TOSHIBA b? DE | ' ì D ,ì7a4fl 0 0 0 T S T 3 S LOGIC/MEMORY TCD205C CCD AREA IMAGE SENSOR CCD (Charge Coupled Device) 67C 09593. T-41-55 T C D 205C is a 488 x 376-element CCD area image sensor desi g n e d for B/ W TV cameras.

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

Contextual Info: D SbE • B O B O b O ^ D D O l O a O 335 H V C T VTP Process Photodiodes E 6 & G V TP 83 50 , 50S, 51 T-41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a th ick layer of clea r epoxy.

toshiba ccd linear dual shift gate

Abstract: ccd linear toshiba TCD107
Contextual Info: T O S H I B A -CLOGIC/MEÎIORY} 90 9 7 2 4 8 T OS H I B A b? DE I ciO‘i7E4fl D 0 I H S 7 3 LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD107C 67 C 0 9 5 7 3 T-41-55 The TCD107C is a high resolution and high sensitivity 1024 element linear image sensor.

VTB8443B

Abstract: 8444B VTB8444B
Contextual Info: SbE D B O B Ü b C H G Ü D I O S H 243 • VCT VTB Process Photodiodes VTB8443B, 8444B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a

Contextual Info: SbE J> B G B D b C H OOOIQ'ÌE OS? H V C T m VTS-1 Process Photodiodes _ VTS 24, E G & G VACTEC_ P R O D U C T D E S C R I P T IO N 26 T-41-51 P A C K A G E D IM E N S IO N S inch mm Large area planar silicon photodiodes primarily intended for use in the

VTB9412B

Abstract: VTB9413B VTB9414B
Contextual Info: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in

VTB9415B

Abstract: VTB9416B k420 9416B x-1015 K4-20
Contextual Info: SbE D BOBGLG'i OÜGlOSfl * W VTB Process Photodiodes HVCT V T B 9 4 1 5 B , 9 4 16B E: 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceram ic package. The packageincorporatesan infrared rejec­

SHARP BS520

Contextual Info: SHARP ELEK/ MELEC DIV 15E D I Blue Sensitive Photodiodes BS520/BS521 • flläO?TÖ QQD27GM 3 | B S 5 2 0 /B S 5 2 1 Photodiode fo r Visible Light Unit : mm Outline Dimensions Features BS520 Spectral sensitivity characteristic akin to that of human eye 2. Compact flat package

hy 9u

Abstract: panasonic linear ccd t3bf
Contextual Info: ~7E PANASONIC INDL/ELEK -CIO 6932052 PANASONIC INDLtELECTRONIC “ I>F§fc,T3Bfl5E OOObbflH ö J ~ 72C 06682 '¿ T D T -41-55 MN8061A “ M N8061A 2,592 M -y h Ä Ä • CCD - i j< — iî-b 2,592-Bit High-Speed, H igh-Sensitivity CCD Linear Image Sensor B $1 H

CM500

Abstract: LZ22291
Contextual Info: SHARP ELEK/ MELEC 15E D IV 0 I â l â Q 7 ci a Q| O O Q liS T l LZ22291 B /W CCD Area Sensor T-41-55 B/W CCD Area Sensor • ■ Description LZ22291 is a 2/3 inch solid-state image sensor composed of PN photodiodes and CCDs charge­ coupled device . With its approximately 290,

LZ22251

Abstract: 3 pin IR sensor circuit transister
Contextual Info: SHARP ELEK/ MELEC DIV 1 SE 0 I 81807=10 O Q Ü lS a S S I LZ22251 B /W CCD Area Sensor T-41-55 LZ22251 • B/W CCD Area Sensor ■ Description LZ22251 is a 2/3 inch solid-state image sensor composed of PN photodiodes and CCDs chargecoupled device . With its approximately 250,000 pix­

Contextual Info: 5bE D BDBDbQ^ GGQ1G5M IVCT V T B 8 4 4 3 B , 8 4 4 4B VTB Process Photodiodes E 243 Q 8. G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack­ age incorporates an infrared rejection

MN8027

Abstract: 2048 x 1 ccd linear array TT30 22-DIC 22DIC panasonic linear ccd
Contextual Info: PANASONIC INDL/ELEK -CIO 1^ 1 ^ 3 2 0 5 5 DDDbbbb 0 693 2 8:52 P ANASONIC INDL » ELECTRON IC 7ZÇ 06666 D~ T^41-55 -<^-Î ÏZyV _ MN8027 M N 8027 2,048 b V hCC D V “ T M ^ ^ / 2 , 0 4 8 - B i t S ensor CCD L in e a r Image “ffi'rP SSH H /Pin Assignment

UV diode 365 nm

Abstract: dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec
Contextual Info: SbE ]> Hi 3 D 3 0 b D cl DQD104Ô T^T H V C T VTB Process Photodiodes V T B 6 0 6 0 U V , 61 UV E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is

photo transistor MEL 11

Abstract: sharp ir sensor H123 LZ2122J LR36682
Contextual Info: SHARP E L E K / MELEC LSE o | D IV a ia a ? ^ o o a ib n CCD Area Sensor for 1/2" CCIR B /W LZ2122J • 7 | LZ2122J T -4 1 -5 5 CCD Area Sensor for 1/2MCCIR B/W Pin Connections Description The LZ2122J is a 1/2 inch solid-state image sensor comprised of PN-junction photodiodes, and CCDs

VTB8340

Abstract: VTB8341
Contextual Info: _ SbE D • 3 0 3 G b 0 T 0 0 0 1 0 S G bTfl IVCT V T B 8 3 4 0 , 8341 VTB Process Photodiodes Z 6 & 6 VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 11 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.

PD170V1

Abstract: SM 4151 terminal block aar osai
Contextual Info: Color Sensor SHARP E L E K / PD170V1 MELEC D I V PD170V1 • 2bE ì> B 0DG43n R. G. B. Color Sensor T BSRPJ r-w-sv O u tlin e D im e n s io n s F e a tu re s 1. 01007=10 U nit : m m C olor sensor with th ree photodiodes, sensi­ tive to the incident lights of th ree different

VTP5040

Abstract: VTP5041
Contextual Info: _ sbE » • B o a o b t n dgo i g? s t?s iVCT 4 1 IR VTP5040 VTP Process Photodiodes T-41-51 E G & G VACTEC PA CKA G E DIM ENSIONS inch mm PRO D U CT D ESCR IPTIO N Planar silicon photodiode in a 'flat" win­ dow, dual lead TO-5 package. Cathode is common to the case. VTP5041 IR

MN8090

Abstract: SM15 CSP-5 mX464 VSS13 5V15V
Contextual Info: PANASONIC INDL/ELEK -CIO 693285^2 P A N A S O N I C *75 DETJbiaaflSa D D D t b m 4 | ~ I NDLt E L E C T R O N I C D 72C 0 6 6 9 4 . T-41-55 MN8090 M N8 09 0 1024 t*'y h MOS <1 - 7 -f * - i > - b Self-Scanning 1024-Bit MOS Linear Image Sensors ^ ® M N 8090Ü ,

AEPX65

Abstract: AEPX65-R2F 5902 Centronic
Contextual Info: CENTRONIC I N C t E -0 DIV 13E D • m saSD GGGGaiS D ■ TECHNICAL CENB " DATA T-41-50 SHEET AEPX65-R2F ULTRA HIGH SPEED PHOTODIODE PACKAGE A l l DIMENSIONS IN mm 4.7 4.65 DIA. CENTRONIC M o d e l AEPX65-R2F h a s b e e n S P E C I F I C A L L Y CREATED FOR THE F I B E R

Contextual Info: Panasonic Chip Inductors Japan Singapore Chip Inductors GE * S e r ie s C h ip Type: III RE, ND, NC, NA, FD, FC, FA, SA, FB, PC, PA, Type RE Size 1608 Type D D (Size 2012) c o y c s a Type D C (Size 2520) Type D A (Size 3225) Type D B (Size 4532) b i t t z t t & L t z i m m } (r e )