B 511 TRANSISTOR Search Results

TBA311

Abstract: TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214
Contextual Info: TCA 511 LINEAR INTEGRATED CIRCUIT TV HORIZONTAL AND VERTICAL PROCESSOR The TCA 511 is a silico n m on olithic integrated circ u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: high sta b ility horizontal oscilla to r,

NE511B

Abstract: SE511B SE511R NE511r ne511 monolithic amplifier 11
Contextual Info: BignDtiGS DUAL DIFFERENTIAL AMPLIFIER LINEAR INTEGRATED CIRCUITS PIN CONFIGURATIONS_ DESCRIPTION T he 511 is a m onolithic dual high frequency differential amplifier with associated constant current source transistors B PACKAG E T op V iew and biasing diode. It is useful from D C to 1 00 M H z. The

FCD830

Abstract: B 511 transistor diode 513 FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

FCD830C

Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830B
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

MA42056

Abstract: 42056
Contextual Info: Silicon Low Noise Bipolar Transistors MA42050 Series Description Nominal fT - 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. - 40 mA Frequency Range - 10 MHz to 600 GHz Geometry - 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF

B 511 transistor

Abstract: FCD810C FCD810D FCD820B FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

Contextual Info: BF510 to 513 _ J \_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

FCD810

Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

FCD820D

Abstract: FCD820B FCD820 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

Contextual Info: Silicon Low Noise Bipolar Transistor MA42140 Series Description Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Iq Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63 The MA42140 series of NPN silicon planar transistors features excellent high frequency current gain at medium

a935

Abstract: transistor a935 a935 transistor 2SK2157 7824 5A oasis T460 MEI-603
Contextual Info: "r N E C — • is — h r ^ MOS Field Effect Transistor 2 S K 2 1 5 7 MOS FET 2SK2157liN9l -V7-JI'«i MOSFETT, 5 V ® S * IC ® tH * • y ?> 7 m ?T T * < X -f y *>, 4 t m m m $ L : mm) * m s ,m > 5.7 ± 0.1 fc &b, 7 " 7 3- n . 2 . — 1.5 ± 0.1 DC/DCu > / < - * £ ¿ilC®3ii-?To

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

2SC482

Abstract: 2SA485 2SC15-0 2SA484 2SA486 2SA496 2SA497 2SA501 2SA503 2SA504
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Emitter Voltage: BC807

b589n

Abstract: B511N information applikation b589 mikroelektronik Heft 12 information applikation mikroelektronik B589nm "Mikroelektronik" Heft aktive elektronische bauelemente ddr applikation heft
Contextual Info: r r j f c n B e le l- f t e n o n f l- t Information Applikation raeo [ n n f l k l n i B ] B l B | < t i n a r * < Information Applikation HEÏI 4 4 : B 5 1 1 N Twnperatur-Sensor-IS B 5 8 9 I Bandgap-Referenzepannungaguelle m KAMMER OER TECHNIK Ebvftuu traft« 2, Frankfurt (Od*r

EHT COIL

Abstract: 16F NEC AUTOMATIC BEAM CURRENT LIMITER CIRCUITS electron gun CRT 3315C EHT COIL crt anode current DDP3315C ITU-R709 capacitor 1C9 TRANSISTOR BC 187
Contextual Info: ADVANCE INFORMATION MICRONAS Edition Dec. 5, 2001 6251-521-1AI DDP 3315C Display and Deflection Processor MICRONAS DDP 3315C ADVANCE INFORMATION Contents Page Section Title 4 5 5 1. 1.1. 1.2. Introduction System Architecture System Application 6 6 6 6 8 8

FT16V

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • J Low Noise Figure. NF = 1.5dB, |S2le|2= 16dB f = 500MHz NF = 1.7dB, |S2le|2= 10.5dB (f = 1000MHz) M A X IM U M RATIN G S (Ta = 25°C)

Contextual Info: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kii, R2=47Kii) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

spice gummel

Abstract: bfp840 Germanium Transistor LNA ku-band
Contextual Info: BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

BFP840F

Abstract: Germanium Transistor spice gummel LNA ku-band
Contextual Info: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.