B 511 TRANSISTOR Search Results

TBA311

Abstract: TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214
Contextual Info: TCA 511 LINEAR INTEGRATED CIRCUIT TV HORIZONTAL AND VERTICAL PROCESSOR The TCA 511 is a silico n m on olithic integrated circ u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: high sta b ility horizontal oscilla to r,

NE511B

Abstract: SE511B SE511R NE511r ne511 monolithic amplifier 11
Contextual Info: BignDtiGS DUAL DIFFERENTIAL AMPLIFIER LINEAR INTEGRATED CIRCUITS PIN CONFIGURATIONS_ DESCRIPTION T he 511 is a m onolithic dual high frequency differential amplifier with associated constant current source transistors B PACKAG E T op V iew and biasing diode. It is useful from D C to 1 00 M H z. The

B 511 transistor

Abstract: FCD810C FCD810D FCD820B FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

Contextual Info: BF510 to 513 _ J \_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

FCD810

Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

FCD820D

Abstract: FCD820B FCD820 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Emitter Voltage: BC807

b589n

Abstract: B511N information applikation b589 mikroelektronik Heft 12 information applikation mikroelektronik B589nm "Mikroelektronik" Heft aktive elektronische bauelemente ddr applikation heft
Contextual Info: r r j f c n B e le l- f t e n o n f l- t Information Applikation raeo [ n n f l k l n i B ] B l B | < t i n a r * < Information Applikation HEÏI 4 4 : B 5 1 1 N Twnperatur-Sensor-IS B 5 8 9 I Bandgap-Referenzepannungaguelle m KAMMER OER TECHNIK Ebvftuu traft« 2, Frankfurt (Od*r

EHT COIL

Abstract: 16F NEC AUTOMATIC BEAM CURRENT LIMITER CIRCUITS electron gun CRT 3315C EHT COIL crt anode current DDP3315C ITU-R709 capacitor 1C9 TRANSISTOR BC 187
Contextual Info: ADVANCE INFORMATION MICRONAS Edition Dec. 5, 2001 6251-521-1AI DDP 3315C Display and Deflection Processor MICRONAS DDP 3315C ADVANCE INFORMATION Contents Page Section Title 4 5 5 1. 1.1. 1.2. Introduction System Architecture System Application 6 6 6 6 8 8

FT16V

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • J Low Noise Figure. NF = 1.5dB, |S2le|2= 16dB f = 500MHz NF = 1.7dB, |S2le|2= 10.5dB (f = 1000MHz) M A X IM U M RATIN G S (Ta = 25°C)

Contextual Info: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kii, R2=47Kii) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

BFP840F

Abstract: Germanium Transistor spice gummel LNA ku-band
Contextual Info: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: Mbö2?ll 00DÖ535 0^7 H DDP3310B ADVANCE INFORMATION Contents Page Section Title 4 4 5 5 1. 1.1. 1.2. 1.3. Introduction Main Features System Architecture System Application 6 6 6 6 6 7 8 8 9 9 9 10 10 12 12 12 13 13 15 16 16 16 17 18 18 18 19 19 19 20 20 20

EN6101

Abstract: EN610-1
Contextual Info: Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 SAf/YO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed tplOOns typ . • High breakdown voltage (VCBo=l500V ). • High reliability (Adoption of HVP process).

micronas ddp 3310B transistor

Abstract: h16a H14d H1D4 h16d east west correction
Contextual Info: ADVANCE INFORMATION MICRONAS INTERMETALL Edition July 9, 1999 6251-464-1AI DDP 3310B Display and Deflection Processor MICRONAS DDP 3310B ADVANCE INFORMATION Contents Page Section Title 4 4 5 5 1. 1.1. 1.2. 1.3. Introduction Main Features System Architecture

BFR840L3RHESD

Abstract: Germanium Transistor LNA ku-band
Contextual Info: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

2SC3874

Contextual Info: Power Transistors 2SC3874 2SC3874 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mm ■ Features • • • • High speed switching High collector-base voltage V cbo Wide area of safety operation (ASO)

BF314

Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität

2n3019

Abstract: tfk 140 3019 npn transistor 554 -1 transistor
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: A llgem ein und Verstärker Applications: G eneral and a m plifier Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung

Contextual Info: m ii S ILIC O N P H O T O T R A N S IS T O R “ PILL PACK” 61055 TYPE GS 1020 O P TO E LE C TR O N IC PRODUCTS DIV IS IO N GENERAL DESCRIPTION MINIATURE LIGHT SENSOR FOR HIGH-DENSITY MOUNTING GLASS/CERAMIC/KOVAR HERMETIC PACKAGED Mii 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a doubleclad printed circuit board. It is available in a range of sensitivities and is lensed fo r minimum

n38 transistor

Contextual Info: Philips Semiconductors bbS3^3i m m 0 0 3 NPN 8 GHz wideband transistor — Preliminary specification 4S0 • APX BFG590; BFG590/X; BFG590/XR AUER PHILIPS/DISCRETE N fc^E ]>■ PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure BFG590 Fig.1 Code: N38