B 2790 Search Results

S4 59A

Abstract: S4 62a RB58 B9907 S4 5BA belden 9114 RB174 21-597
Contextual Info: pmV MS HADE IN THIRD AW3LE PROJECTION HIS DRAUIHÖ 13 UNPUBLISHED. I RELE ftEVtSICIWS AM RELEASE - 9 i PER 03 3 0 -0 2 3 6 -9 6 / l\ E 3V IE W V ] EW C A B LE USED W ITHO UT C A B LE U5ED W IT H 3. SEE B I .5 . 4. PARTS /5 \ U S E A SPA C ER SPA C ER 2790

cr24-1203rba

Abstract: CR24-1303RBA tsm 1250 CR24-1303RCA CR24-1303RBC CR24-1203RCAC CR30-503A cr24 CR27 CR24-1403RBC
Contextual Info: LOW POWER THYRISTORS — 22 to 32A lT AV SB*C •t s m l2t O u tlin e It ( A V ) 8 5 ° C •t s m l2t O u tlin e 22 A 240 A 290 A2sec 6 24 A 320 A 500 A2sec 6 T ype No. V rrm V rsm CR25-051 B CR25-1 01 B CR25-201B CR25-301 B CR25-401 B CR25-501 B CR25-601 B

diode avalanche DSA VRRM 2300

Abstract: diode avalanche DSA DSA 135 dsa 1508-11 DSA VRRM 2300 40561 dsa 1508 abb diode YSD 40629 YSD 45-01
Contextual Info: A B B SEMICONDUCTORS AG DSA Avalanche Diodes Type Ordering number Bestellnummer Num. de commande 33E D □ QOlbfi Bfl 000002=1 0 B A B B DSA Avalanche-Dioden I f.ÎM V rrm I frms V Tc=50°C Tc=100<>C 8,3 ms 10 ms kA V A A kA I favm DSA l 403-38.50 GG.L1G 3800.5000 1040

Contextual Info: Tem ic U 2790 B TELEFUNKEN Semiconductors 1000-MHz Quadrature Modulator Description U 2790 B is 1000-MHz quadrature modulator that uses TELEFUNKEN’s advanced UHF process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF

31t12

Contextual Info: Tem ic U 2790 B TELEFUNKEN Semiconductors 1000-MHz Quadrature Modulator Description U 2790 B is 1000-MHz quadrature modulator that uses TELEFUNKEN’s advanced U H F process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF

d 151811

Abstract: 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135
Contextual Info: S E MI COND UC TORS AG rrm Ifavm O o &> V f Type O rdering num ber Bestellnum m er Num. de com m ande □ ODl hfi Bfi OOOQOaq □ B A B B DSA Avalanche-Dioden 1 DSA Avalanche Diodes 3flE D o A B B Tc A V DSA l 403-38.50 GG, L1G 3800.5000 1040 Tf 5M V = 100°C 8,3 m s 10 m s

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

Contextual Info: MOS 1C, LSI MN 3011 M N 3011 3328 a 6 * -y P B B D 3328-S tag e 6~Tap Low N oise B B D for Analog Signal Delays H S /D e sc r ip tio n Unit .' mm MN3011 i± x r u * , W + * n.• # > J 6 ? 7 Ht - r U ft ? l-i# ^ - t v . ^ <1. ^ 2> f t t i i t l i s ’’7 S ' S S

1Q207

Contextual Info: DATE R E V IS IO N S 7 -2 9 -9 6 E-C.N. $ 1 0 2 0 7 . / B ILL O F MATERIALS: 1. 2. 3. S S H - L X H 1 D 4 - HOLDER. S S L - L X 5 0 9 3 S R C / X X LED. / B - / E DESIG NATE AXIAL INTENSITY B Y LETTER CODE. R E L IA B IL IT Y N O T E : DUR M ANY Y EA R S OF EXPERIENCE DATA ACCUMULATION INDICATE

8394

Contextual Info: DATE REVISIONS REV DRAWING NUMBER SSF— LX453ID — 99 3 -4 -9 2 ADDED ANODE NOTE. A 8 -£ 3 -9 4 CHG'D SAFE B 5 -E 7 -9 8 E.C.N a iO B R B R ./ 1 R ED RAW N./ DPER, SPECS, REV C C ELECTRO-OPTICAL CHARACTERISTICS TA - 2 5 'C PARAMETER 9,80±0.30 [0.386+ 0.012]

SSH-LXH4815BSG

Abstract: r025 MARK MQ
Contextual Info: DATE REVISIONS REV DRAWING NUMBER REV SSH-LXH4815BSG-3 1.90 [0 .2 3 2 ] 1.85 [0 . 2 3 0 ] R0.25 [0 .0 1 0 ] 0 4 ,8 0 [0 . 1 8 9 ] 2.4-B [0 .0 9 7 ] 3 PLS. [0 .0 7 0 ] 0.50 [Û.Û20] — 2.46 [0.097] DETAIL B - B NOTES 1. MATERIAL: BLACK NYLON 9 4 V - 0. 2.

254C0

Abstract: 20C3
Contextual Info: DATE R E V IS IO N S 1 -2 4 -9 5 R EV E.C.N. =#101L4. / DRAW ING N U M B E R A 6 -1 6 -9 7 E.C.N. #10 3 55 ./ B 1 2 -1 2 -9 7 E.C.N. 410BRDR. &, «10402./ C REV S S B —C0B7676GW C NOTES: P.C.B. MATERIAL: FR4, DOU BLE SIDED. ALL P.C.B. HOLES TO BE PLATED THOUGH.

PC3200U-30330-A0

Abstract: tcl 2272 HYS72D64300HU-5-B PC2700U-25330-a0 PC3200U-30330-B0 HYS64D64300HU-5-B PC2100U pc2700u PC3200U PC3200U-30330
Contextual Info: D a t a S h e e t , V 0 . 5 , S e p . 2 00 3 H Y S 6 4 D 6 4 3 0 0 H U -[ 5 / 6 / 7 ] - B H Y S 7 2 D 6 4 3 0 0 H U -[ 5 / 6 / 7 F ] - B H Y S 6 4 D 1 2 8 3 2 0 H U - [ 5 / 6 / 7 ] -B H Y S 7 2 D 1 2 8 3 2 0 H U - [ 5 / 6 / 7 F ] -B 1 8 4 - P i n U n b u f f er e d D u a l - I n- L i n e M e m o r y M o d u l es

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

P2N2222A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 40 Vdc C ollector-B ase Voltage VCBO 75 Vdc E m itter-B ase Voltage vebo 6.0 Vdc Collector Current — Continuous

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Contextual Info: Extract from the online catalog B-UEG Order No.: 2790253 Electronic housing Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data GTIN EAN 4017918245757 Note Made-to-order

BU24204

Abstract: 16X4 LCD 512X6 bu2418 BU2405
Contextual Info: IC M onolithic: IC s 11-Chip Microcomputer ☆ Under Development 4-Bit 1-Chip Microcomputer Series S e rie s Process Category ROM B it RAM (B ri) Instruction S ta c k set le v e ls I/O P o rts Execu­ tion time </*) w BU2403/ BU2403AL Power supply voltage

bd135 equivalent

Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
Contextual Info: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold

TTC 203 thermistor

Abstract: XTR100AP XTR100
Contextual Info: B U R R -B R O W N XTR100 ] Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSM ITTER FEATURES A P P LIC A T IO N S • INSTRUMENTATION AM PLIFIER INPUT Low Offtit Voltage. 25m V mix Low Voltage Drift, 0.5m V/°C m ix Low Nonllnairlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL

Contextual Info: DATE REVISIONS REV 9 -3 0 -9 6 E.C.N. #10247,/ A 1-5-98 E.C.N. ttLOBRIR./ B DRAWING NUM BER REV 0E D -S T -8 L B UNCONTROLLED DOCUMENT E L E C T R O -O P T IC A L CHARACTERISTICS TA = 2 5 'C PARAMETER SYMBOL TEST CONDITION COLLECTOR DARK CURRENT Iceo V ceo= 10V