B 1038 SUPERIOR Search Results

3SK59

Abstract: 3SK59-GR diode jn7 dual 1038 Transistor
Contextual Info: 2/U □ 3 h 3SK SILICON N-CHANNEL DEPLETION DUAL GATE MOS FIELD EFFECT TRANSISTOR O rMfa BF.MIXJI3 , VHF «Jirtlffl Unit in mm PM TUNER,VHF Amplifier Applications. -to AQC&fS&B: < AGCHfKi 'Vi ; 0res = C103pF Typ. &ntTj- ; NF = 2.2 dB (Typ .) C t— 100MHz )

ma40208

Abstract: MA400 MA40052 MA40268-276
Contextual Info: Chip and Packaged Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE 120 ■ BOTH P AND N TYPE DIODES 276 I ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE

MADP-007224-01072T

Abstract: MADP-007224-01072
Contextual Info: MADP-007224-01072T Non Magnetic MELF PIN Diode Features Rectangular MELF SMQ Hermetically Sealed Low Loss Low Distortion High Isolation Passivated PIN Diode Chips Full Face Bonds Ultra Low Non-Magnetic Packages Suitable for MRI Applications • High Power Handling Capability

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

atc200b104kw50

Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

TL139

Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications

HFBR-1414 receiver application notes

Abstract: hp HFBR-1414 application notes Driver circuit hfbr-2412 HFBR-0400 HFBR-0414 HFBR-0416 HFBR-14X2 HFBR-14X4 HFBR-24X6 log RX2 1040
Contextual Info: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or

ultem 1010

Abstract: hp HFBR-1414 application notes SMA-905 drawing HFBR-1414T HFBR-2414 pt100 schematic HFBR-2416 receiver application notes HFBR-0416 HFBR 04X0 HFBR-1414 receiver application notes
Contextual Info: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or

TL172

Abstract: TL170
Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications

B 1038 superior

Abstract: irfp9240
Contextual Info: PD-9.481C International IrâRi Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description

Mosfet

Abstract: SSPL2015
Contextual Info: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and

walkie talkie circuit diagram

Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12
Contextual Info: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206

CD 1517

Abstract: IRFP9240
Contextual Info: PD-9.481C International S Rectifier IRFP9240 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description

Contextual Info: International Rectifier HEXFET Power M O S FE T 465S452 OOlSSSb D71 • INR PD-9.481C IRFP9240 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

MA4PK2004

Abstract: MA4PK3001
Contextual Info: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design

MA4PK2004

Abstract: LM 072 MA4P diode mri pin switch MA4PK3003 100 mhz hf diode 50 ampere MA4PK3004 MA4PK2000 MA4PK2001 MA4PK2002
Contextual Info: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • Voltage Ratings to 3000 Volts • 2 5 Ampere Current Rating • Designed for HF, Multi-Kilowatt Switches • Low Loss, Low Distortion Design • Rugged, Hermetically Sealed Packaging

6-40 UNF

Contextual Info: M an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating D esigned for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design

d 2331

Abstract: half adder ic number of half adder ic with full specification vts 7070
Contextual Info: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to

FET 3N143

Abstract: maximum drain voltage of FET 3N143 3n128 air variable capacitor 3N143 RCA-3N128 JV3I transistor 3N128 equivalent RCA Solid State amplifier AN-3193
Contextual Info: G E SOLI] STATE “ 3875081 G E SOLID STATE Di” DE pflTSDfll D D m i a M 2 | l * B“ 01E 14.984 Uj *7-31-«*5“ Small-Signal MOSFETs. .

TCXO mtbf

Abstract: transistor c333 AN-932 MIL-PRF-55310 spec OS-68338 DOC200103 radiation cots cmos B A date sheet 2011 VECTRON 2501 manufacturer list cots radiation
Contextual Info: REV B DESCRIPTION DATE 7/1/08 CO-11365 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

DOC200103

Abstract: transistor c331 transistor c333 bipolar cots radiation HT-67849 MIL-PRF-55310 OS-68338 MIL-PRF-55310 spec TCXO mtbf M55365
Contextual Info: REV C DESCRIPTION DATE 7/15/09 CO-15263 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE

Contextual Info: REV D DESCRIPTION DATE 11/5/14 CO-24284 PREP HLW APPD DF Specification, Hybrid TCXO Hi-Rel Standard MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM CODE IDENT NO SIZE 00136 A DWG. NO.

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to