AX837 Search Results

Contextual Info: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.

2SK1904

Contextual Info: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C

2SJ268

Contextual Info: O rdering num ber: EN4237 _ 2SJ268 No.4237 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.

2SJ257

Contextual Info: Ordering num ber:EN4242 2SJ257 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.

EN4233

Abstract: 2SJ259
Contextual Info: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SJ257

Contextual Info: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SK1891

Abstract: I30U
Contextual Info: 2SK1891 2093 2090 LD L o w D riv e S e rie s V DSS= 3 0 V N Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1891-applied equipment.

2SK1898

Abstract: 2824I
Contextual Info: 2SK1898 2093 LD L o w D riv e S e rie s V DSs = 6 0 V 2090 N Channel Power MOSFET 4209 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in th e num ber of m anufacturing processes for 2SK1898-applied equipm ent.

2SJ254

Contextual Info: Ordering num ber:EN 4231 _ 2SJ254 No.4231 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Micaless package facilitating mounting. A b so lu te M axim um R atin g s a tT a = 25°C

2SJ263

Abstract: EN4234
Contextual Info: Ordering num ber:E N 4 2 3 4 _ 2SJ263 P-Channel MOS Silicon FET No.4234 Very High-Speed Switching Applications i Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. Absolute Maximum Ratings atTa = 25°C

2SK1904

Contextual Info: Ordering n u m b e r:EN42 1 1 _ 2SK1904 No.4211 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - M icaless package facilitating m ounting.

2SK1897

Abstract: EN4208
Contextual Info: Ordering n u m b e r:E N 4 2 0 8 SMIYO _ 2SK1897 N-Channel MOS Silicon FET No.4208 Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. - Low-voltage drive. • Micaless package facilitating mounting.

sanyo wx series

Abstract: sanyo wx 2SJ277
Contextual Info: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.

2SK1904

Contextual Info: Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1904]

2SK1895

Contextual Info: Ordering number:EN4207 N-Channel Silicon MOSFET 2SK1895 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1895]

2SK1900

Abstract: ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171
Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

2SJ272

Contextual Info: Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ272]

Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

ITR00308

Abstract: 2SJ274 ITR00309 ITR00310 ITR00311
Contextual Info: 注文コード No.N 4 2 3 9 2SJ274 No. 4 2 3 9 52099 新 2SJ274 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。

2SJ266

Abstract: ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265
Contextual Info: 注文コード No.N 4 2 3 6 2SJ266 No. 4 2 3 6 三洋半導体ニューズ 52099 新 2SJ266 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ263

Abstract: ITR00228 ITR00229 ITR00230 ITR00231
Contextual Info: 注文コード No.N 4 2 3 4 2SJ263 三洋半導体ニューズ No. 4 2 3 4 52099 新 2SJ263 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ277

Contextual Info: Ordering num ber:EN 4241 2SJ277 No.4241 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface mount type device making the following possible.

2SJ275

Contextual Info: Ordering number:EN4240 2SJ275 No.4240 P-C hannel MOS Silicon FET SANTO Very High-Speed Switching Applications j F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.

100AVS

Contextual Info: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.