AX83 Search Results

16WideSO

Abstract: 16 Wide SO MAX830CWE MAX832 MAX831 AX832
Contextual Info: JV\Æ XAJV\ ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and su b je ct to change. 8/94 5V/3.3V/3V/Adjustable-O utput, 1A, Step-Down, PWM, Switch-Mode DC-DC Regulators The M AX830/M AX831/M AX832/M AX833 are m onolithic, bipolar, pulse-width-modulation PWM , switch-mode, stepdown DC-DC regulators. Each is rated at 1A. Very tew

Contextual Info: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.

2SK1904

Contextual Info: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C

2SJ268

Contextual Info: O rdering num ber: EN4237 _ 2SJ268 No.4237 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.

2SJ257

Contextual Info: Ordering num ber:EN4242 2SJ257 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.

Contextual Info: Ordering number:EN4443A SB20W05T Schottky Barrier Diode Twin Type • Cathode Common 50V, 2A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1254A [SB20W05T] Features · Low forward voltage (VF max=0.55V).

TDA8943SFU

Abstract: SB10-09T 44392
Contextual Info: Ordering number:EN4439A SB10-09T Schottky Barrier Diode 90V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1255A [SB10-09T] Features · Low forward voltage (VF max=0.7V).

EN4233

Abstract: 2SJ259
Contextual Info: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SJ257

Contextual Info: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

SB20-05T

Abstract: sb20
Contextual Info: Ordering number:EN4441 SB20-05T Schottky Barrier Diode 50V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1255A [SB20-05T] Features · Low forward voltage (VF max=0.55V).

SB30W03T

Contextual Info: Ordering number:EN4445 SB30W03T Schottky Barrier Diode Twin Type • Cathod Common 30V, 3A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1254A [SB30W03T] Features · Low forward voltage (VF max=0.55V).

transistor on 4409

Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Contextual Info: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).

2SK1891

Abstract: I30U
Contextual Info: 2SK1891 2093 2090 LD L o w D riv e S e rie s V DSS= 3 0 V N Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1891-applied equipment.

2SK1898

Abstract: 2824I
Contextual Info: 2SK1898 2093 LD L o w D riv e S e rie s V DSs = 6 0 V 2090 N Channel Power MOSFET 4209 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in th e num ber of m anufacturing processes for 2SK1898-applied equipm ent.

2SJ263

Abstract: EN4234
Contextual Info: Ordering num ber:E N 4 2 3 4 _ 2SJ263 P-Channel MOS Silicon FET No.4234 Very High-Speed Switching Applications i Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. Absolute Maximum Ratings atTa = 25°C

2SK1904

Contextual Info: Ordering n u m b e r:EN42 1 1 _ 2SK1904 No.4211 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - M icaless package facilitating m ounting.

2SK1897

Abstract: EN4208
Contextual Info: Ordering n u m b e r:E N 4 2 0 8 SMIYO _ 2SK1897 N-Channel MOS Silicon FET No.4208 Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. - Low-voltage drive. • Micaless package facilitating mounting.

sanyo wx series

Abstract: sanyo wx 2SJ277
Contextual Info: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.

44401

Abstract: SB10W05T
Contextual Info: Ordering number:EN4440A SB10W05T Schottky Barrier Diode Twin Type • Cathode Common 50V, 1A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1254A [SB10W05T] Features · Low forward voltage (VF max=0.55V).

Contextual Info: O rdering number: EN4440A SB10W05T Schottky Barrier Diode Twin Type •Cathode Common 50V, 1A Rectifier A pplications ■High frequency rectification (switching regulators, converters and choppers). F e a tu re s • Low forward voltage (Vp max=0.55V). • Fast reverse recovery time (trr max = 10ns).

2SK1904

Contextual Info: Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1904]

2SJ272

Abstract: ITR00288 ITR00289 ITR00290 ITR00291
Contextual Info: 注文コード No.N 4 2 3 8 2SJ272 No. 4 2 3 8 61599 新 2SJ272 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。

2SK1895

Contextual Info: Ordering number:EN4207 N-Channel Silicon MOSFET 2SK1895 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1895]

2SK1900

Abstract: ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171
Contextual Info: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable