AW00 Search Results

Contextual Info: GaAs SPDT 1C 10 WattT/R Switch DC-2.5 GHz EBAlpha AW002R2-12 Features S0IC-8 • T/R Switch *— 0.050 1.27 mm BSC ■ High Isolation (30 dB @ 0.9 GHz) [t [ \ ■ Designed for Mobile Radio Applications ':s ■ P.-, dB> 10 W @ 0.9 GHz I 0.244 (6.20 mm) 0.228 (5.80 mm)

SPDT SWITCH 6 GHZ 1 WATT

Abstract: aw002r2-12
Contextual Info: GaAs SPDT IC 10 Watt T/R Switch DC–2.5 GHz AW002R2-12 Features SOIC-8 • T/R Switch PIN 8 0.050 1.27 mm BSC ■ High Isolation (30 dB @ 0.9 GHz) ■ Designed for Mobile Radio Applications ■ P-1 dB ≥ 10 W @ 0.9 GHz ■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz)

AW10G

Abstract: AW005G
Contextual Info: AW005G - AW10G PRV : 50 - 1000 Volts Io : 1.5 Amperes AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 10.0 0.31 (7.87) FEATURES : 0.22 (5.59) 0.18 (4.57) Glass passivated chip High case dielectric strength High surge current capability High reliability

AW002R2-11

Abstract: AW002R2
Contextual Info: GaAs IC SPDT 10 W T/R Switch DC-2.5 GHz ESAlpha AW002R2-11 -11 Features • High Intercept Point IP3 63 dBm @ 0.9 GHz ORIENTATION , M A R K - ■ High Power, T/R Switch ■ 8 Lead Hermetic Surface Mount Package 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD

aw002r2-12

Contextual Info: DATA SHEET AW002R2-12, AW002R2-12LF: GaAs SPDT IC 5 W T/R Switch 300 kHz–2.5 GHz Features Pin Out High isolation 30 dB @ 0.9 GHz Designed for mobile radio applications ● P -1 dB = 10 W @ 0.9 GHz @ 25 °C ● High intercept point (IP3 63 dBm,@ 0.9 GHz)

20 aw

Abstract: AW005G AW10G AW00
Contextual Info: AW005G - AW10G PRV : 50 - 1000 Volts Io : 1.5 Amperes AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 10.0 0.31 (7.87) FEATURES : Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current

SN6337

Contextual Info: GaAs SPDT IC 10 W T/R Switch DC–6 GHz AW004R2-93 Features -93 • Low DC Power Consumption 0.160 0.140 ■ Low Insertion Loss ■ High Linearity 63 dBm IP3 0.100 ■ T/R Switch 0.060 ■ Small Low Cost “Chip on Board” Package 0.020 0.000 Description

Contextual Info: GaAs IC SPDT 10 W T/R Switch DC-2.5 GHz ESAlpha AW002R2-11 F ea t ur e s • High Intercept Point IP3 63 dBm @ 0.9 GHz -11 ORIENTATION , M A R K - ■ High Power, T/R Switch ■ 8 Lead Hermetic Surface Mount Package 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD

Contextual Info: DATA SHEET AW002R2-12, AW002R2-12LF: GaAs SPDT IC 5 W T/R Switch 300 kHz–2.5 GHz Features Pin Out High isolation 30 dB @ 0.9 GHz Designed for mobile radio applications ● P -1 dB = 10 W @ 0.9 GHz @ 25 °C ● High intercept point (IP3 63 dBm,@ 0.9 GHz)

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com AW005G - AW10G AVALANCHE GLASS PASSIVATED

Contextual Info: GaAs SPDT IC 5 W T/R Switch DC–2.5 GHz AW002R2-12 Features SOIC-8 • T/R Switch PIN 8 0.050 1.27 mm BSC ■ High Isolation (30 dB @ 0.9 GHz) ■ Designed for Mobile Radio Applications ■ P-1 dB = 10 W @ 0.9 GHz @ 25°C ■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz)

AW002R2-11

Contextual Info: GaAs IC SPDT 10 W T/R Switch DC–2.5 GHz AW002R2-11 Features -11 • High Intercept Point IP3 63 dBm @ 0.9 GHz ORIENTATION MARK ■ High Power, T/R Switch ■ 8 Lead Hermetic Surface Mount Package 0.180 (4.57 mm) SQ. MAX. 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD

AW002R2-12

Abstract: AW002R2-12LF GND53
Contextual Info: DATA SHEET AW002R2-12, AW002R2-12LF: GaAs SPDT IC 5 W T/R Switch 300 kHz–2.5 GHz Features Pin Out High isolation 30 dB @ 0.9 GHz Designed for mobile radio applications ● P -1 dB = 10 W @ 0.9 GHz @ 25 °C ● High intercept point (IP3 63 dBm,@ 0.9 GHz)

SPDT SWITCH 6 GHZ 1 WATT

Contextual Info: GaAs SPDT FET MMIC10 Watt TR Switch in 8 Lead SOIC Package DC-2.5 GHz 03 A lpha O Hyf I BWH HW U M W I I f : AW002R2-12 Features • TR Switch ■ Designed for Mobile Radio Applications ■ P -1 dB Greater Than 10 Watts @ 900 MHz ■ SOIC 8 Package ■ Reflective Open

AW002R2-12

Abstract: aw002r2
Contextual Info: GaAs SPDT IC 10 W T/R Switch DC–2.5 GHz AW002R2-12 Features SOIC-8 • T/R Switch PIN 8 0.050 1.27 mm BSC ■ High Isolation (30 dB @ 0.9 GHz) ■ Designed for Mobile Radio Applications ■ P-1 dB ≥ 10 W @ 0.9 GHz ■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz)

AW002R2-12

Abstract: SPDT SWITCH 6 GHZ 1 WATT
Contextual Info: GaAs SPDT 1C 10 WattT/R Switch DC-2.5 GHz EBAlpha AW002R2-12 Features SOIC-8 • T/R Switch PIN 8 ■ High Isolation 30 dB @ 0.9 GHz 0.050 (1.27 mm) BSC M ■ Designed for Mobile Radio Applications 0.244 (6.20 mm) 0.228 (5.80 mm] PIN 1 IN D IC ATO R - ■ P_i dB> 10 W @ 0.9 GHz

Contextual Info: GaAs SPDT IC 10 W T/R Switch DC–6 GHz AW004R2-93 Features -93 • Low DC Power Consumption 0.160 0.140 ■ Low Insertion Loss ■ High Linearity 63 dBm IP3 0.100 ■ T/R Switch 0.060 ■ Small Low Cost “Chip on Board” Package 0.020 0.000 Description

AR-17

Abstract: AW12 Q110 Q117 RAM1024 scuba ar17
Contextual Info: ORCA Series 4 Quad-Port Embedded Block RAM August 2002 Technical Note TN1016 Introduction The ORCA Series 4 FPGA platform provides embedded block RAM EBR macrocells to compliment it’s distributed PFU RAM. By using ORCA Series 4 EBR, designers can realize the benefits of system-on-a- chip (SoC) and

AR-17

Abstract: AR17 AW16 br512 Q117 scuba AR17 datasheet AW12 Q014 transistor d115
Contextual Info: ORCA Series 4 Quad-Port Embedded Block RAM April 2002 Technical Note TN1016 Introduction The ORCA Series 4 FPGA platform provides embedded block RAM EBR macrocells to compliment it’s distributed PFU RAM. By using ORCA Series 4 EBR, designers can realize the benefits of system-on-a- chip (SoC) and intellectual property (IP) reuse to quickly deliver their end product to market. The ORCA EBR delivers several configurable blocks of memory based embedded IP. These blocks include quad-port RAM, dual-port RAM, FIFO memory,

Contextual Info: SONY CXB1583Q 266Mbaud Fibre Channel Transceiver IC Description The CXB1583Q is a transceiver IC with the built-in PLLs into a single chip. For receiver, the 265.625Mbaud serial data is received and it is output as a 10-bit parallel data; for transmitter, the 265.625Mbaud 10-bit parallel data is

NJU9210

Abstract: NJU9210F 4000KSS BC7L NJU9210B
Contextual Info: •*r CS1 U fin i aXU “N IV ■inc * # s 1 ii * h * BÜ <\ h t? te 1- "N <N \ •S ~t^ V îS « ^foo co rN lh *<N A A => *s -¿_ ■E Sa m £ A *<\ « CM *Î iR « Æ 0 H v~ u H o Œ m S «s as i il A vK r> « AJ ^ -w A PS ^ A ■k* te r' ÎS -*-6 M 0 4 ; +*

ELS312AR

Abstract: ELS-312AR S322RDB S322HWB 313AG S301HWB ELS-313AP 312AP 7 segment common anode 1 red 312AE
Contextual Info: 30E D EVERLICHT ELECTRONICS • 3 4 1 S 703 □□□DD 7 ci 5 ■ — MAIN FEATURES: ' G . .! -‘SI V / E R J U G H T m ■ ELS-313/312 SERIES Single Digit LED Display 0.3 inch 0 .3 IN C B H IG H CHARA C TER. ■ C H O IC E S O F R IG H T /L E F T DECIM AL PO INT.

AS183-92

Abstract: AS188-92LF AS183-92LF AF002N2-32LF AS222-92 SMS7621 PS088-315 SKY12324-73LF SKY72301-21 AS193-73LF
Contextual Info: Part Number Index Part No. Page No. AA100-59LF . . . . . . . . . . . . . .184 AA101-80 . . . . . . . . . . . . . . . .256 AA101-80LF . . . . . . . . . . . . . .256 AA102-80 . . . . . . . . . . . . . . . .225 AA102-80LF . . . . . . . . . . . . . .225 AA103-72 . . . . . . . . . . . . . . . .166

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?