AUTO POWER WINDOW SWITCH Search Results

103p capacitor

Abstract: KA9259D Laser Diode 808 2 pin 1000 mw RF74 S1L9223B01 S1L9223B01-Q0R0 S5L9284D S5L9286F01 SG32 SG42
Contextual Info: RF AMP & SERVO SIGNAL PROCESSOR S1L9223B01 INTORDUCTION 80−QFP−1420C The S1L9223B01 is a 1-chip BICMOS integrated circuit to perform the function of RF amp and servo signal processor for compact disc player applications. It consist of blocks for RF signal processing, focus, tracking,

Contextual Info: ISSI I S 2 7 L V 5 1 2 65,536 X 8 LOW VOLTAGE CMOS EPROM FEATURES DESCRIPTION • Single 3.3V power supply The IS S IIS27LV512 is a low voltage, low power, high-speed 512K-bit CMOS 64K-word by 8-bit Ultraviolet Erasable CMOS Programmable Read-Only Memory. It utilizes the standard

MT16VDDT3264AG

Abstract: ddr 184 pin MT16VDDT12864A PC2100 PC2700
Contextual Info: 256MB, 512MB, 1GB x64 184-PIN DDR SDRAM DIMM DDR SDRAM DIMM MT16VDDT3264A – 256MB MT16VDDT6464A – 512MB MT16VDDT12864A – 1GB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds Features Figure 1: 184-Pin DIMM (MO-206)

Contextual Info: FMD4A32LBx–37Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.7 Dec. 2008 Rev. 0.7, Dec. ‘08 1 FMD4A32LBx–37Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Jun.13th, 2006 Preliminary

Contextual Info: FMD8B16LBx–30Ax 256M 16Mx16 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD8B16LBx–30Ax Document Title 256M(16Mx16) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008

Contextual Info: FMD4A32LCx–30A C x 128M(4Mx32) Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30A(C)x Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Jun. 27th, 2008

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double

Contextual Info: in te i' M8097BH, M8397BH, M8797BH ADVANCED 16-BIT MICROCONTROLLER WITH 8- OR 16-BIT EXTERNAL BUS Military • M8797BH: an M8097BH with 8K Bytes of On-Chip EPROM ■ M8397BH: an M8097BH with 8K Bytes of On-Chip ROM ■ 232 Byte Register File ■ High Speed I/O Subsystem

Contextual Info: 200PIN DDR2 533 SO-DIMM 256MB With 32Mx8 CL4 TS32MSQ64V5F Description Placement The TS32MSQ64V5F is a 32M x 64bits DDR2-533 SO-DIMM. The TS32MSQ64V5F consists of 8pcs 32Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit

Contextual Info: 200PIN DDR2 533 SO-DIMM 256MB With 32Mx16 CL4 TS32MSQ64V5M Description Placement The TS32MSQ64V5M is a 32M x 64bits DDR2-533 SO-DIMM. The TS32MSQ64V5M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 200PIN DDR2 533 SO-DIMM 256MB With 32Mx16 CL4 TS32MSQ64V5M Description Placement The TS32MSQ64V5M is a 32M x 64bits DDR2-533 SO-DIMM. The TS32MSQ64V5M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 512MB With 64Mx8 CL4 TS64MLQ64V5VL Description Placement The TS64MLQ64V5VL is a 64M x 64bits DDR2-533 Unbuffered DIMM. The TS64MLQ64V5VL consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

amd29f040b

Abstract: 29f040b amd 29f040 BM29F040 29F040-90TI AMD29F040
Contextual Info: BRIGHT Preliminary BM29F040 Microelectronics Inc. 4 MEGABIT 512K x 8 5 VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as 512K x 8 bits each. The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1

Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 1GB With 64Mx8 CL4 TS128MLQ64V5VL Description Placement The TS128MLQ64V5VL is a 128M x 64bits DDR2-533 Unbuffered DIMM. The TS128MLQ64V5VL consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 400 Registered DIMM 2048MB With 256Mx4 CL3 TS256MQR72V4T Description The TS256MQR72V4T is a 256M x 72bits DDR2-400 Registered DIMM. The TS256MQR72V4T consists of 18 pcs 256Mx4bits DDR2 SDRAMs in 68 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 533 Registered DIMM 512MB With 64Mx8 CL4 TS64MQR72V5J Description Placement The TS64MQR72V5J is a 64M x 72bits DDR2-533 Registered DIMM. The TS64MQR72V5J consists of 9 pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

64MX16

Contextual Info: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: ESI IS27C020 262,144 X 8 HIGH-SPEED CMOS EPROM FEATURES • Fast read access time: 70 ns • Industrial and commercial temperature ranges available • ±10% power supply tolerance • JED EC-approved pinout • Standard 32-pin PDIP, PLCC, and TSOP packages

CA by Atmel T89C51CC01 CAN microcontroller

Abstract: atmel 8051 microcontroller with built in ADC h2 zapi Philips ID27 infineon tqfp-44 zapi h1 controller atmel 8051 sample code idt7 db44 pinout bosch can 2.0B time setting
Contextual Info: How to Replace Infineon SABC505C/CA by Atmel T89C51CC01 CAN Microcontroller Infineon Technologies developed a family of C500 core 8051 compatible micro-controllers running with the standard 80C51 12 clocks per cycle. Peripherals such as Controller Area Network CAN: BOSCH Standard and capture and compare channels

Contextual Info: Freescale Semiconductor Advance Information Document order number: MC07XSF517 Rev. 1.0, 7/2013 Triple 7.0 mOhm and Dual 17 mOhm High Side Switch 07XSF517 The 07XSF517 is the latest achievement in DC motors and lighting drivers. It belongs to an expanding family to control and diagnose

Contextual Info: Freescale Semiconductor Advance Information Document order number: MC07XS6517 Rev. 1.0, 6/2013 Triple 7.0 mOhm and Dual 17 mOhm High Side Switch 07XS6517 The 07XS6517 is the latest achievement in automotive lighting drivers. It belongs to an expanding family to control and diagnose incandescent

BA100 diode

Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Contextual Info: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)

ADC1251

Abstract: ADC1251CIJ
Contextual Info: ADC1251 Self-Calibrating 12-Bit Plus Sign A D Converter with Sample-and-Hold Y Y Y Y Key Specifications Y Y Y Y Y Y Y Resolution Conversion Time Sampling Rate Linearity Error Zero Error Full Scale Error Power Consumption 12 bits plus sign 8 ms max 83 kHz (max)

Contextual Info: ADS5401 www.ti.com SLAS946 – APRIL 2013 Single 12-Bit 800Msps Analog-to-Digital Converter Check for Samples: ADS5401 FEATURES 1 • • • • • • • • • Single Channel 12-Bit Resolution Maximum Clock Rate: 800 Msps Low Swing Fullscale Input: 1.0 Vpp