AUSTERLITZ WPS Search Results

austerlitz WPS

Abstract: austerlitz wacker P12 v6515 Wacker igbt eupec V6515 Paste Dow Corning d 340 Dow Corning 340 wps 50gr
Contextual Info: APPLICATION NOTE Date: 2002-12-19 Page 1 of 4 AN Number: AN2002-12 Aging stability of various heatconducting pastes for use with modules without baseplates Heat-conducting pastes from various manufacturers were tested for their aging stability in conjunction with an

austerlitz

Abstract: CuMoCu Dow Corning 340 WPSII NI42 heatsink Austerlitz AN2027 M177 Corning stmicroelectronics fe58
Contextual Info: AN2027 APPLICATION NOTE DMOS PACKAGES 1. MOUNTING RECOMMENDATIONS FOR DMOS PACKAGES : M174, M177 & M244 1.1 Mounting recommendations - Ensure holes in heatsinks are free from burrs; - Minimum depth of tapped holes in heatsinks is 6 mm; - Use 4-40 UNC-2A cheese-head screws with a flat washer to spread the joint pressure;

SD2943

Abstract: austerlitz 2L TRANSISTOR M177 STEVAL-TDR00 STEVAL-TDR005V1
Contextual Info: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %

M177

Abstract: SD2943 austerlitz JESD97 STEVAL-TDR005V1 power transistor transistors equivalents
Contextual Info: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %

SD2933

Abstract: M177 STEVAL-TDR004V1 STEVAL-TDR00 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

austerlitz

Abstract: SD2933 2L TRANSISTOR M177 STEVAL-TDR00 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

2L TRANSISTOR

Abstract: 14981 STEVAL-TDR004V1 austerlitz M177 SD2933 Ni100 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

2933

Abstract: 300WPEP amplifier 400W 10w 900MA DB-2933-54 JESD97 M177 SD2933
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

M177

Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

SD2942

Abstract: sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177
Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

"RF Power Amplifier"

Abstract: 2L TRANSISTOR Ni100 SD2932
Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

SD2942

Abstract: sd2942 108 sd2942 module SD2933 NI 100 M177
Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

SD2933

Abstract: free transistor bs 200 M177 DB-2933-54 2933 JESD97 300WPEP 300w class ab amplifier m174 0400X0
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

FERRITE TRANSFORMER 3932

Abstract: DB-3932-30 393M M177 RF400-9 SD3932 100b choke IMD-30 IMD10
Contextual Info: DB-3932-30 Evaluation board using 1x SD3932 for HF transmitters Features • Excellent thermal stability ■ Frequency: 2 - 30 MHz ■ Supply voltage: 100 V ■ Output power: 400 W ■ Input power 4 W max. ■ Efficiency: 62 % - 68 % ■ IMD at 400 WPEP < -25 dBc

stac2942

Abstract: STAC2942B dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz
Contextual Info: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max

Contextual Info: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.

stac2942

Abstract: STAC2942B STEVAL-TDR028V1 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B
Contextual Info: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.

Contextual Info: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max

Contextual Info: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.

STAC244

Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Contextual Info: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider