AUG02 Search Results

MC33389ADW

Abstract: CIRCUIT SCHEMATIC CAR ECU HSOP20 schematic diagramm 35 kV high voltage area detector PV216 c5v2 MC33388 MC33389 MC33389ADH MC33389CDW
Contextual Info: Order Number: MC33389/D Rev 3.4, 1st Aug02 MOTOROLA Semiconductor Technical Data Advance Information MC33389 System Basis Chip with Low Speed Fault Tolerant CAN AUTOMOTIVE SBC SYSTEM BASIS CHIP The MC33389 is a monolithic integrated circuit combining many functions

GE C20C

Abstract: SWCR10 KCL01 SWT7 GE Transient Voltage Suppression SO28W
Contextual Info: Order Number: MC33389/D Rev 3.4, 1st Aug02 MOTOROLA Semiconductor Technical Data Advance Information MC33389 System Basis Chip with Low Speed Fault Tolerant CAN AUTOMOTIVE SBC SYSTEM BASIS CHIP The MC33389 is a monolithic integrated circuit combining many functions

SED 1704

Abstract: cygnal F311 C8051F310 C8051F311 CIP-51 LQFP-32 25MIPS C8051F310 pin diagram
Contextual Info: Preliminary C8051F310/1 16K ISP FLASH MCU Family ANALOG PERIPHERALS - 10-Bit ADC • Up to 200 ksps • Up to 21 or 17 External Single-Ended or Differential - Instructions in 1 or 2 System Clocks - Up to 25 MIPS Throughput with 25 MHz Clock - Expanded Interrupt Handler

KT001140

Abstract: KTS01141 2 bimetal thermostat 6A-11
Contextual Info: SENT BY: B J ENCLOSURES; 01730280944; 1 -AUG-02 13:55 ; PAGE 3 /3 t>U 5 ' S r U - 0 ] . Llatge setting range • Small size i Simple to mount I High switching performance Heating Cooling KT001140: Thermostat (normallydosed contact breaker for regulating heaters«

9S12XEP100

Abstract: DELAY code for MC9S12XEP100 S12XMPUV1 9S12XEP768 9S12XE S12XMMCV4 ADC12B16C example MC9S12XEP100 MC9S12XE100 9S12x
Contextual Info: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12 Microcontrollers MC9S12XEP100 Rev. 1.02 11/2006 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

Contextual Info: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70

BSM200GAL120DN2

Abstract: BSM300GA120DN2 C67070-A2301-A70 diode chopper
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

transistor marking BMs

Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

schematic rj45

Contextual Info: RoHS Compliance MATERIAL: . HOUSING—PBT POLYESTER U L94V-0 MIXED GLASS FIBER. STANDARD COLOR-BLACK. . CONTACTS—0 .35m m THICK PHOS-BRONZE PLATED WITH 3 0 u ” HARD GOLD AND GOLD FLASH IN SOLDER AREA. •SH IELD -0.25m m TIHCK COPPER ALLOY, PLATED WITH NICKEL.

Contextual Info: THIS D R A WI N G IS UNPUBLISHED. C OR Y RI G HT I 9 9 9 RELEASED BY TYCO ELECTRONICS CORPORATION F OR ALL PUBLICATION RIGHTS REV I S IONS D I ST L OC CAD RESERVED. AP [PrgEj DO NOT REVISE EXCEPT BY CAD LTR DESCRIPTION DWN DATE R E D R A W BY CAD EC-435/99

5V40V

Contextual Info: SGB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

Contextual Info: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

P75N02LS

Abstract: *75n02
Contextual Info: P75N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

BSM200GAL120DN2

Abstract: BSM300GA120DN2 C67070-A2301-A70
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

SKW20N60HS

Contextual Info: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

P55N02LS

Contextual Info: P55N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 10mΩ 60A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

SE2567L-R

Abstract: SE2567L
Contextual Info: SE2567L 5 GHz Power Amplifier with Power Detector Preliminary Information Applications Product Description ƒ ƒ The SE2567L is a 5GHz power amplifier offering high linear power for wireless LAN applications. It incorporates a power detector for closed loop

02T02

Contextual Info: TZMB. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization

NCP4115

Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
Contextual Info: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W

SOT 23 CODE MCS

Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Contextual Info: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor

marking r4 SOT343

Abstract: BGA427
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

100-10L

Abstract: gsm signal amplifier circuit diagram LMV243 gsm analog converter cell phone detector 100-10L B2 gsm antenna pcb PCB GSM ANTENNA LDC15D gsm 100l
Contextual Info: 211026_App. Brief #122_4.qxd 12/18/02 3:18 PM Page 1 A Multi-Band GSM/GPRS Power Amplifier Controller Application Brief 122 Barry Yuen As shown in Figure 1, the LMV243 consists of a 45 dB log amp detector for sensing the RF output power level of a PA and an error amplifier to close

ua 180

Abstract: marking NEs
Contextual Info: BF2030 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

SKB15N60HS

Contextual Info: SKB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability