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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally atched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

ta31087

Contextual Info: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM REGULATOR 1C FOR CORDLESS TELEPHONE 2 independent regulators and m icrocom puter pow er on a chip, very suitable fo r a handset o f cordless telephone. FEATURES • W atch-dog-tim er fun ction • 2 independent regulators

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally atched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally atched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally atched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package

50920-1

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally atched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally atched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally atched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package

LF356 "cross reference"

Contextual Info: ^ A N A L O G DIVISION 5 D n S ' ' HIGH PERFORMANCE JFET INPUT OP AMPS LF356 PIN CONFIGURATION COMMON FEATURES DESCRIPTION The LF356 o pe ra tio na l a m p lifie r e m plo ys w ell m atched, h ig h vo ltag e JFET inp u t s tru c tu re s on th e sam e m o n o lith ic c h ip as

Contextual Info: TYPE Cott CFAZ 207 TYPE CFAZ 12 Max 10M ax - 3 3 -n — Ml 7 Description , n «h 1— * ip 0.5 • AM IF filters com b in ing m atching coil w ith CFA type • C e nter frequ en cy range: 450 — 470K H z • B an dw idth at 6d B : 5KH z min. Unit: mm Features

Contextual Info: Tem ic TCZS8100 Semiconductors atchable Pairs - Emitter and Detector Description P airs o f infrared-em itting diode and photologic detector, m atched in their optical and electrical features. T hese pairs enable a lot o f applications. T hey can be used both

Contextual Info: HIGH FREQUENCY POWER AMPLIFIER °* UG6V-3F Part No. ' v 3 U . f l-V*“ 3 • A pplication of high speed and high e fficiency G a-A s FE T to m inim ize pow er consum ption. • W ith input / outp ut im pe d a nce d esigned at 50Q , no outp ut m atching circuit

Contextual Info: Tem ic BPV22NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 22N F is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on G aA s and G aA lA s on GaAIAs IR

K423

Abstract: CI 8426
Contextual Info: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo­ diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR

transistor A968

Abstract: a968 BLV101B JBC223 capacitor philips ll BLV101A 2222-581 L1-L10 philips e3 Philips MBB
Contextual Info: Philips Semiconductors M 00 ^ 3 106 PHILIPS INTERNATIONAL bSE D UHF power transistors FE A T U R E S • High input and output im pedances prom ote easy m atching BLV101A/BLV101B Q U IC K R E F E R E N C E DATA R F perform ance at T h = 2 5 °C in a com m on em itter test circuit. M o d e of

U254

Abstract: mic b DG421 DG421DJ DG423 DG423DJ DG423DN DG425 DG425DJ
Contextual Info: Siliconix DG421/423/425 A M e m b e r o f th e TEMIO G ro u p Low-Power, High-Speed, atchable CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • L atched C ontrol Inputs Rail-to-Rail A nalog Input R ange

Manufacturer Logos

Contextual Info: O K I electronic components KGF2702_ Wide-Band Amplifier for Microwave UHF-Band and PCS Frequencies GENERAL DESCRIPTION The K G F2702, housed in an 8-pin SO P plastic package, is a tw o-stage am plifier that features flat and high gain ov er a w ide range of frequencies, internal inpu t and output m atching, and high

Contextual Info: ANGSTROHM Resistor Networks N etw orks provide design engineers w ith the flexibility to package several resistors in a small space w hile m aintaining tight resistance ratio m atching, close te m ­ perature coefficient of resistance tracking, and m ini­

AC08A

Abstract: DAC08
Contextual Info: DAC-08 8 -Bit High S p eed M ultiplying D/A Converter Distinctive Characteristics • • Fast settling o u tp u t current — 85nsec Full scale current prem atched to ± 1 .0 LSB • • • D irect interface to T T L , CM OS, E C L, H T L , N M O S N on linearity to ±0.1% max over tem perature range

3UKCT-040-01-00

Abstract: WC-620
Contextual Info: DWG: 3UKCT-040-01-00 64 T cr* rr u kD 1 Hand crimping t o o l Type: WC-620 Featu res P a ra lle l a ctio n o p e r a t io n R atchet re le a s e Easy re a d ju s tm e n t o f load C o n ta ct lo c a to r in s u la tio n -s to p P re cis e ly p ro file s ground

500K

Contextual Info: o r n e PRECISION METAL FILM RESISTORS RC SERIES • C EC C released products with low TC Rs over a wide resistance range • C lose resistance tolerance down to 0.05% • Low noise and negligible voltage coefficient • M atched sets available ELECTRICAL DATA

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally atched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TIM1213-15L FEATURES : • LOW IN TER M O D U LA TIO N D IS TO R TIO N ■ HIGH GAIN IM 3 = - 4 5 dBc at Po = 30.0 dBm, GidB = 6.0 dB at 12. 7 GHz to 13. 2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY M ATCHED HIG H POWER ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally atched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package