TIM5359-16 Search Results

TIM5359-16 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TIM5359-16		Toshiba	TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power	Original	PDF	103.94KB	4
TIM5359-16		Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF	120.21KB	5
TIM5359-16EL		Toshiba	TIM5359 - TRANSISTOR RF POWER, FET, FET RF Power	Original	PDF	68.2KB	2
TIM5359-16L		Toshiba	Transistor	Scan	PDF	277.47KB	5
TIM5359-16SL		Toshiba	TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power	Original	PDF	103.94KB	4
TIM5359-16UL		Toshiba	C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 42.5; G1dB (dB): 10; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B	Original	PDF	333.98KB	4

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Toshiba America Electronic Components


Toshiba America Electronic Components TIM5359-16UL MICROWAVE POWER GaAs FET 15V 14A 3-Pin 2-16G1B - Trays
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TIM5359-16UL	Tray			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TIM535916SL MICROWAVE POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TIM535916SL		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote