AT10650 Search Results

Contextual Info: • 44 47 5A 4 0 D G ^ 3 5 44S « H P A ATF-26150 AT-10650-1 2-16 GHz General Purpose Gallium Arsenide FET Whp% H E W L E T T WLliM P A C K A R D H E W L E T T - P A C K A R D / CM PN TS blE D 50 mil Package Features • • • • Low Noise Figure: 1.8 dB typical at 12 GHz

Contextual Info: WhoI PACKARD HEWLETT WlHM ATF-26150 AT-10650-1 2-16 GHz General Purpose Gallium Arsenide FET 50 mil Package Features • Low Noise Figure: 1.8 dB typical at 12 GHz • High Associated Gain: 9.0 dB typical at 12 GH z • High Output Power: 18.0 dBm typical Pi dB

Contextual Info: AVANTEK S GE INC 0AVANTEK i m D m 000bS77 H ATF-26150 AT-10650-1 2-16 GHz Gênerai Purpose' Gallium Arsenide FET - T - 3.I-2S Avantek 50 mil Package Features • • • • Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AT10650-5

Abstract: B717 ATF-26550 AT-10650-5 atf 10650 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK ATF26550 k 246 transistor fet AVANTEK transistor
Contextual Info: AVANTEK INC ede d • ^AVAN TEK im n tb ooobsai 4 ATF-26550 AT-10650-5 2-16 G H z General P urposë *' Gallium A rsenide F E T 2.5 Features Avantek 50 mil Package • High Associated Gain: 8.0 dB typical at 12 GHz • High Output Power: 18.0 dBm typical Pi dB

Avantek S

Abstract: AVANTEK transistor
Contextual Info: SOE D AVANTEK I N C • AVANTEK im n b b QOGbS?11! b ATF-26350 AT-10650-3 2-16 GHz General Purpose Gallium Arsenide FET T -2 Avantek 50 mil Package Features • • • • \-Z $ Low Noise Figure: 2.3 dB typical at 12 GHz High Associated Gain: 8.0 dB typical at 12 GHz

AT10650-5

Contextual Info: A V A N T E K INC EGE D • ^AYAN TEK 11411th OODbSfll 4 ATF-26550 AT-10650-5 2-16 GHz General Purposé " Gallium Arsenide FET -r-^V-2.5 Avantek 50 mil Package Features • • • • High Associated Gain: 8.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB

AT10650-5

Contextual Info: HEW LETT-PACKARD/ C MP N T S b lE HEW LETT PACKARD ]> • M MM 7 5 Ô4 0^0 ■¡H PA ATF-26550 AT-10650-5 2-16 GHz General Purpose Gallium Arsenide FET Features 50 mil Package • High Associated Gain: 8.0 dB typical at 12 GHz • High Output Power: 18.0 dBm typical Pi dB

AT10650-5

Abstract: ATF26550
Contextual Info: ATF-26550 AT-10650-5 2-16 GHz General Purpose Gallium Arsenide FET ÏÏB Ê H E W L E T T mL'EM PA C K A R D Features • • • • 50 mil Package High Associated Gain: 8.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB at 12 GHz Low Noise Figure: 2.5 dB typical at 12 GHz

AT10650-1

Abstract: ATF26150 transistor A495 AVANTEK transistor AT-10650-1 a495 transistor
Contextual Info: im n t t SGE D AVANTE K I NC AVANTEK 00QbS77 2 ATF-26150 AT-10650-1 2-16 GHz Gênerai Purpose* Gallium Arsenide F E T - Avantek 50 mil Package Features • • • Low Noise Figure: 1.8 d B typical at 12 GHz High A ssociated Gain: 9.0 dB typical at 12 GHz

AT-10650-3

Abstract: AT10650-3 ATF-26350 AVANTEK transistor
Contextual Info: A V A N T E K INC SOE D • Q a v a n tek 1141*1bb O Q O b S T T b ■ ATF-26350 AT-10650-3 2-16 GHz General Purpose Gallium Arsenide FET T -3 \-Z $ Avantek 50 mil Package Features • • • • Low Noise Figure: 2.3 dB typical at 12 GHz High Associated Gain: 8.0 dB typical at 12 GHz

AT10650

Contextual Info: ATF-26350 AT-10650-3 2-16 GHz General Purpose Gallium Arsenide FET WKSl EWLETT WÜKM H PACKARD 50 mil Package Features Low Noise Figure: 2.3 dB typical at 12 GHz High Associated Gain: 8.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB at 12 GHz