ATF26150 Search Results

Contextual Info: • 44 47 5A 4 0 D G ^ 3 5 44S « H P A ATF-26150 AT-10650-1 2-16 GHz General Purpose Gallium Arsenide FET Whp% H E W L E T T WLliM P A C K A R D H E W L E T T - P A C K A R D / CM PN TS blE D 50 mil Package Features • • • • Low Noise Figure: 1.8 dB typical at 12 GHz

Contextual Info: WhoI PACKARD HEWLETT WlHM ATF-26150 AT-10650-1 2-16 GHz General Purpose Gallium Arsenide FET 50 mil Package Features • Low Noise Figure: 1.8 dB typical at 12 GHz • High Associated Gain: 9.0 dB typical at 12 GH z • High Output Power: 18.0 dBm typical Pi dB

Contextual Info: AVANTEK S GE INC 0AVANTEK i m D m 000bS77 H ATF-26150 AT-10650-1 2-16 GHz Gênerai Purpose' Gallium Arsenide FET - T - 3.I-2S Avantek 50 mil Package Features • • • • Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AT10650-1

Abstract: ATF26150 transistor A495 AVANTEK transistor AT-10650-1 a495 transistor
Contextual Info: im n t t SGE D AVANTE K I NC AVANTEK 00QbS77 2 ATF-26150 AT-10650-1 2-16 GHz Gênerai Purpose* Gallium Arsenide F E T - Avantek 50 mil Package Features • • • Low Noise Figure: 1.8 d B typical at 12 GHz High A ssociated Gain: 9.0 dB typical at 12 GHz

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5