AT01670 Search Results

Contextual Info: AT01670 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)150m Absolute Max. Power Diss. (W)1.0m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

Contextual Info: AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor Thal H E W L E T T mLlím P A C K A R D Features 70 mil Package • 22.0 dBm typical Pi dB at 2.0 GHz • 10.5 dB typical Gi dB at 2.0 GHz • • High Gain-Bandwidth Product: 7.0 GHz typical ftHermetic Gold-ceramic Microstrip Package

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

Contextual Info: HEULETT-PACKARI/ CMPNTS blE 1 H EW LETT PACKARD m • t4475im 0001787 Til H H P A AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor Features 70 mil Package • 22.0 dBm typical Pi dB at 2.0 GHz .040 • 10.5 dB typical Gi dB at 2.0 GHz 1.02

s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

Abstract: AVANTEK transistor AT01670 Avantek amplifier 167 AVANTEK AT016 Avantek S Avantek UA-152
Contextual Info: AVANTEK INC 2QE D AVANTEK i m n b t a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 70 mil Package Features • • • • OGObMSM 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz High Galn-Bandwidth Product: 7.0 GHz typical fr

Contextual Info: AVANTE K I NC 20E d avantek m im n b b ooob454 a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor A vantek 70 m il Package Features • 22.0 dB m typ ical P i dB at 2.0 G Hz • 10.5 dB typ ical G i dB at 2.0 G Hz • High G ain-B and w idth Product: 7.0 G H z typical fr