AT002S3 Search Results

AT002S3-12

Contextual Info: GaAs 35 dB MMIC FET Voltage Variable Single Positive Control Attenuator 0.4-2.5 GHz EBAIptia AT002S3-12 Features • 35 dB Range ■ SOIC 8 Package ■ Single Positive DC Bias Control ■ Low Insertion Loss < 1.7 dB @ 900 MHz ■ Low Cost ■ Requires Single Fixed Positive 5 Volt Bias

Contextual Info: GaAs 35 dB MMIC FET Voltage Variable Single Positive Control Attenuator 0.4-2.5 GHz jßHAIpht AT002S3-12 Features • 35 dB Range ■ SOIC 8 Package ■ Single Positive DC Bias Control ■ Low Insertion Loss < 1.7 dB @ 900 MHz ■ Low Cost ■ Requires Single Fixed Positive 5 Volt Bias

Contextual Info: GaAs 35 dB MMIC FET Voltage Variable Single Positive Control Attenuator 0.4–2.5 GHz AT002S3–12 Features 35 dB Range SOIC 8 Package Single Positive DC Bias Control Low Insertion Loss < 1.7 dB @ 900 MHz J1 Low Cost J2 Requires Single Fixed Positive 5 Volt Bias

AT002S3-11

Contextual Info: GaAs 35 dB IC Voltage Variable Single Control Attenuator 0.4–2.5 GHz AT002S3-11 Features -11 • Single Positive Control Voltage ORIENTATION MARK ■ 35 dB Attenuation Range ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD Requirements5

AT002S3-12

Abstract: variable attenuator
Contextual Info: GaAs IC 35 dB Voltage Variable Attenuator Single Positive Control 0.4–2.5 GHz AT002S3-12 Features SOIC-8 • +5 V Operation PIN 8 0.050 1.27 mm BSC ■ Single Positive Voltage Control ■ 35 dB Attenuation Range 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR

Contextual Info: GaAs 35 dB MMIC FET Voltage Variable Single Control Attenuator 0.4-2.5 GHz EHA lpha AT002S3-11 Features • 35 dB Range ■ 8 Lead Metal Surface Mount Flatpack Package ■ Single Positive Control Voltage ■ Low Insertion Loss 1.7 dB ■ Low Phase Shift

Contextual Info: GaAs 35 dB MMIC FET Voltage Variable Single Positive Control Attenuator 0.4–2.5 GHz AT002S3–12 Features 35 dB Range SOIC 8 Package Single Positive DC Bias Control Low Insertion Loss < 1.7 dB @ 900 MHz J1 Low Cost J2 Requires Single Fixed Positive 5 Volt Bias

Contextual Info: GaAs 1C 35 dB Voltage Variable Attenuator Single Positive Control 0.4-2.5 GHz EH Alpha AT002S3-12 Features S0IC-8 • +5 V Operation PIN 8 0.050 1.27 mm BSC ■ Single Positive Voltage Control ■ 35 dB Attenuation Range 0.244 (6.20 mm) 0.228 (5.80 mm) ■ Low Insertion Loss (1.7 dB @ 0.9 GHz)

Contextual Info: GaAs 35 dB IC Voltage Variable Single Control Attenuator 0.4-2.5 GHz EHAlpha AT002S3-11 -11 Features • Single Positive Control Voltage ORIENTATION , M A R K - -0 .1 8 0 4.57 mm SQ . MAX. ■ 35 dB Attenuation Range ■ 8 Lead Hermetic Surface Mount Package

AT002S3-12

Contextual Info: GaAs 1C 35 dB Voltage Variable Attenuator Single Positive Control 0.4-2.5 GHz ESAlpha AT002S3-12 Features SOIC-8 • +5 V Operation PIN I ■ Single Positive Voltage Control 0.050 1.27 mm BSC M ■ 35 dB Attenuation Range 0.244 (6.20 mm) 0.228 (5.80 mm)

Contextual Info: GaAs 35 dB 1C Voltage Variable Single Control Attenuator 0.4-2.5 GHz EHAlpha AT002S3-11 •11 Features ■ Single Positive Control Voltage ORIENTATION , MARK— _ -0.180 4.57 mm SQ. MAX. ■ 35 dB Attenuation Range ■ 8 Lead Hermetic Surface Mount Package

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

AT002S3-11

Abstract: L243
Contextual Info: GaAs 35 dB IC Voltage Variable Single Control Attenuator 0.4-2.5 GHz ESAlpha A T 002S 3-11 •11 Features ■ Single Positive Control Voltage ORIENTATION , M A R K - -0 .1 8 0 4.57 mm SQ . MAX. ■ 35 dB Attenuation Range ■ 8 Lead Hermetic Surface Mount Package