AT 627 Search Results

connector cross reference

Abstract: blaupunkt panasonic VF-8Z blaupunkt 723 731 motorola NovAtel nec 2035 744 PTR80 motorola s 114-8 motorola 114-8
Contextual Info: ANTENEX TM CELLULAR CONNECTORS CELLULAR CONNECTOR CROSS REFERENCE C ur r ent A nt enna M anuf act ur er M o del S t yle AT &T® 3630 Retractable AT &T® AT &T® AT &T® AT &T® AT &T® AT &T® Audiovox® Audiovox® Audiovox® Blaupunkt® Blaupunkt® Ericsson®

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

SYAS-860

Contextual Info: Attenuator/Switch SYAS-860 Typical Performance Data FREQ. INSERTION LOSS AMP. UNBAL. PHASE UNBAL. ISOLATION at 0 mA Control Current RETURN LOSS MHz (dB) (dB) (deg.) (dB) (dB) at 20mA Control Current at ± 20mA Control Current at ± 20mA Control Current In-Out

BL-5B nokia

Abstract: PTR80 CTX5000 DCPU821M5V DCPU821M DCXE821TNC DCXP821SFO DCXH821M5A DCXH821M4A DCXH821M50
Contextual Info: b I ANTENEX« CELLU CELIA C urrerri A n te n n a M a n u fa c tu re r AT&T AT&T® AT & T AT&T® M ode! 3630 3710/3730 3760 3770 3810 Style Retractable Screw-on Retractable Retractable 3830 Retractable AT&T® 6650 R«tracfabfe Audiovox® Audio voi«®

bux diode

Abstract: SIA437DJ diode marking code BUX marking code vishay SILICONIX
Contextual Info: New Product SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0145 at VGS = - 4.5 V - 29.7 0.0205 at VGS = - 2.5 V - 25 0.0330 at VGS = - 1.8 V - 19.7 0.0650 at VGS = - 1.5 V

Contextual Info: SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) (Max.) ID (A) a 0.0145 at VGS = -4.5 V -29.7 0.0205 at VGS = -2.5 V -25 0.0330 at VGS = -1.8 V -19.7 0.0650 at VGS = -1.5 V -4 Qg (Typ.)

mje 1303

Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

702 TRANSISTOR sot-23

Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

BJT BF 331

Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

Contextual Info: Power Amplifier TGA8334-SCC 2 to 20-GHz Frequency Range 0.4-W Output Power at 1-dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband 8-dB Gain with ± 1-dB Flatness

014e1

Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Contextual Info: Power Amplifier TGA8334-SCC 2 to 20-GHz Frequency Range 0.4-W Output Power at 1-dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband 8-dB Gain with ± 1-dB Flatness

si88

Abstract: si8817
Contextual Info: Si8817DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.076 at VGS = - 4.5 V - 2.9 0.100 at VGS = - 2.5 V - 2.5 0.145 at VGS = - 1.8 V - 2.1 0.320 at VGS = - 1.5 V - 0.5 VDS (V)

311E-15

Abstract: 8082 8-PIN
Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.076 at VGS = -4.5 V -2.9 0.100 at VGS = -2.5 V -2.5 0.145 at VGS = -1.8 V -2.1 0.320 at VGS = -1.5 V -0.5 MICRO FOOT 0.8 x 0.8

NE67383

Contextual Info: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

NE67383

Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at

Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

s12308

Abstract: SiA477EDJ ZENER 106B
Contextual Info: SiA477EDJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) - 12 0.0140 at VGS = - 4.5 V 0.0160 at VGS = - 3.7 V 0.0190 at VGS = - 2.5 V 0.0330 at VGS = - 1.8 V - 12 - 12 - 12 - 12 34.7 nC PowerPAK SC-70-6L-Single

Diode in5819

Abstract: controller LTA 702 N TTI5870 CTX031 smps to motherboard wiring diagram POWER SUPPLY RPS 5467 MAX782
Contextual Info: 19-0146; Rev 1; 8/93 y k iy ix iy i/ i Triple-Output Pow er-Supply C ontroller for N otebook Com puters High efficiency 95% at 2A; greater than 80% at loads from 5mA to 3A is achieved through synchronous recti­ fication and PWM operation at heavy loads, and IdleModeTM operation at light loads. It uses physically