ASAT Search Results

J162

Abstract: transistor j162 SATCOM ASAT35L
Contextual Info: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting

d 1877 transistor

Abstract: 1689I ASAT15 ASI10518 TRANSISTOR D 1902
Contextual Info: ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for General Purpose Class Operations up to 1.7 GHz. PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. FEATURES: .050 x 45° • Intenal Input Matching Network • PG = 9.2 dB at 15 W/1.7 GHz

ASAT25

Abstract: ASI10520
Contextual Info: ASAT25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT25 is Designed for General Purpose Class Operations up to 1.7 GHz. PACKAGE STYLE .310 2L FLG FEATURES: • Internal Input/Output Matching Network • PG = 9.0 dB at 25 W/1.7 GHz • Omnigold Metalization System

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P Series • Excellent current handling – up to 20 Asat. • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite Terminations RoHS compliant gold over nickel over phos bronze.

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P Series • Excellent current handling – up to 28.8 Asat. • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite Core and winding loss See www.coilcraft.com/coreloss

ASAT15

Abstract: ASI10518
Contextual Info: ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for General Purpose Class Operations up to 1.7 GHz. PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. FEATURES: .050 x 45° • Intenal Input Matching Network • PG = 9.2 dB at 15 W/1.7 GHz

ADV9912

Abstract: MO-151 Assembly Locations
Contextual Info: CUSTOMER ADVISORY FineLine BGA Packages Altera is adding ASAT and ASE as additional sources of supply for the FineLine BGA packages currently assembled by ANAM in the Philippines and Korea. This change will affect the FineLine BGA package outline thickness*, which will result in a

IC 555

Abstract: ASAT30 ASI10521
Contextual Info: ASAT30 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: A .020 x 45° Ø .130 NOM. The ASI ASAT30 is Designed for .050 x 45° D C FEATURES: • • • Omnigold Metalization System L B M E F G H J K I MAXIMUM RATINGS MAXIMUM DIM

Contextual Info: ASAT20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT20 is Designed for Genral Purpose Class C Operation up to 1.7 GHz. PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. .050 x 45° FEATURES: D C • Internal Input Matching Network • PG = 9.2 dB at 20 W/1.7 GHz

Nitto

Abstract: MOLDING MATERIAL MP8000 Nitto MP 8000 MP-8000 JEDEC22 mp8000 Nitto MP8000 CY7C611 84-1lmis JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98422 VERSION 1.0 May, 1999 Nitto MP-8000 Molding Compound 160 Ld Plastic Quad Flat Pack PQFP (CY7C611) Asat, Hong Kong Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director

IC 555

Abstract: ASAT20 ASI10519
Contextual Info: ASAT20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI ASAT20 is Designed for A .020 x 45° Ø .130 NOM. .050 x 45° FEATURES: D C • • • Omnigold Metalization System L B M E F G H J MAXIMUM RATINGS IC I 3.0 A K MAXIMUM

IC 555

Abstract: ASAT15 ASI10518
Contextual Info: ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI ASAT15 is Designed for A .020 x 45° Ø .130 NOM. .050 x 45° FEATURES: D C • • • Omnigold Metalization System L B M E F G H J MAXIMUM RATINGS 3.0 A IC 45 V VCBO

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P Series • Excellent current handling – up to 28.8 Asat. • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite Core and winding loss See www.coilcraft.com/coreloss

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P Series • Excellent current handling – up to 28.8 Asat. • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite Core and winding loss See www.coilcraft.com/coreloss

ASAT10

Abstract: ASI10517
Contextual Info: ASAT10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for General Purpose Class C Operations up to 1.7 GHz. PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. .050 x 45° FEATURES: • Internal Input Matching Network • PG = 11 dB at 10 W/1.7 GHz

LT542

Abstract: LT832 LT822 LT824 LT1732 LT833 LT512 LT7022 lt821 LT1733
Contextual Info: FEMA ELECTRONICS CORP 2IE D • asaTaTT ÜQQOOâl S EMITTING CO LO R LUM INOUS INTENSITY IN MCD 9 10mA PA C K A G E DEVICE NU M BER ROUND SERIES CO LO R D IFFUSED WHITE DIFFUSED W ATER CLEAR CO LO R TRANSPARENT LT 7 0 1 1 LT7011G L T 7021 LT7031 LT7041 LT7041R

ASAT20

Abstract: ASI10519 d 1877
Contextual Info: ASAT20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT20 is Designed for Genral Purpose Class C Operation up to 1.7 GHz. PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. .050 x 45° FEATURES: D C • Internal Input Matching Network • PG = 9.2 dB at 20 W/1.7 GHz

0510 hp

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P • Excellent current handling – up to 28.8 Asat. • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite Core and winding loss See www.coilcraft.com/coreloss

ASAT25

Abstract: ASI10520 818 transistor
Contextual Info: ASAT25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT25 is Designed for General Purpose Class Operations up to 1.7 GHz. PACKAGE STYLE .310 2L FLG FEATURES: • Internal Input/Output Matching Network • PG = 9.0 dB at 25 W/1.7 GHz • Omnigold Metalization System

PCN0119

Abstract: Nitto-HC100 HC100 shin-etsu nitto hc100 Nitto HC 672-BALL Compound Nitto EP20K200E
Contextual Info: PROCESS CHANGE NOTICE PCN0119 FineLine BGA Package Molding Compound Change Change Description: ASAT Hong Kong will change the FineLine BGA package molding compound from Shin Etsu to Nitto HC-100. This change will not affect the package thickness specification, overall

FP4451

Abstract: Theta JB hysol adhesive JC15-1 698-100AB DCDA37480-M014-001 G38-87 R1004 304-TBGA Aavid Thermalloy cold plate
Contextual Info: Freescale Semiconductor, Inc. Thermal Measurement Report Freescale Semiconductor, Inc. Package Description: DATE: 7/10/1998 Revised 7/31/98 Package: 480 37.5x37.5 mm TBGA 29 x 29 Array Case: 1152-01 Frame: ASAT Drawing Nbr. E04480002-0-50 DCDA37480-M014-001

ASIASAT10

Abstract: datasheet of ic 555 IC 555 ic 565 application ASAT10 ASI10517
Contextual Info: ASAT10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. FEATURES: .050 x 45° • Input Matching Network • • Omnigold Metalization System D C L B M E F G H MAXIMUM RATINGS

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P • Excellent current handling – up to 28.8 Asat. • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each 20% tolerance part Core material Ferrite Core and winding loss See www.coilcraft.com/coreloss

EME 6300HR

Abstract: EME-6300
Contextual Info: Qualification Report September 1993, Version 1.3, QTP# 93251 ASAT ASSEMBLY QUALIFICATION 80 Lead Quad Plastic Quad Flatpack PQFP (Dry packing) CYPRESS SEMICONDUCTOR PAGE 2 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Mold Compound Name/Manufacturer: Lead Frame material: