AS3T Search Results

E 13009 2

Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use

BUZ73AI

Abstract: buz73a
Contextual Info: N AMER PHILIPS/DISCRETE PowerMUS transistor QbE J> m “ ^53=131 D0144bS 4 • BUZ73A -r_ ?< May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS

ECG1610

Abstract: ECG1510 DECG1510 VITA 1300 application note
Contextual Info: PHILIPS E C G INC 17E 1 ^ 5 3 ^ 0 G00SSS7 5 • 7 ' \ 5 ^ ' - j 3 ' 0 7 Q ■ ECG1510 V o lta ge Level Ind. Dr., 5 Step O utput for LED , Linear Scale Sem iconductors .Iie" 3.0>- ,768"tl9.5 M A X. Features • Bar-type display of Input level using 5 LEDs

Contextual Info: 3 E - 0 0 0 2 CI-0E PRO PRIETARY DATAI r u fa üDcunDNt o nû TNTamntroN coNtflfNQd Max nd + b a r a n d u c a c L u n d o r d r a c la iK l vfthoLjt prior w ~TttM n r H Î n Tom o f ME5TCDR a üIvIeIqn c f VIE DR D r a r a t l a N . BE5CRIPTIDN E07 CHANGED MATERIAL

CL800

Abstract: P005
Contextual Info: TH IS DOCVM INT AND T H I DATA DISCLOSED H E R E IN OR H E REW ITH I S NOT TO B E REPRODUCED. USFD. OR D ISC LO SID IN VH O LZ OH IN PAK T TO A N T O N I WITHOUT P E R M IS S IO N O f VICOR CORP DESCRIPTION DATE LTK APP'D. 1 P RE LIU RELEASE PE R PCD4 POOS