ARK MICROELECTRONICS Search Results

Contextual Info: 9 UNITED MICROELECTRONICS 3QE • T32SASS DDQ02S7 M ■ T ~ *±5 T - ^ - /5 - U M 3217 6-Digit Muitifunction Watch ■ Single 1.5 volt battery operation ■ 3 2 7 6 8 H z quartz crystal tim e base § I ■ 6-digit LCD w ith 7-day m ark, A M /P M m ark, date m ark,

ATT65630

Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
Contextual Info: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary

PowerPC 601 instructions set

Abstract: PPC601 ppc601fd
Contextual Info: Prelim inary D ata IBM Microelectronics Total Technology Solutions“ PowerPC601 100 MHz RISC Microprocessor P roduct D escription The IBM Microelectronics PowerPC 6011Mmicroprocessor is the first im plem entation of the PowerPC™ family of Reduced Instruction Set

FTN035N60

Contextual Info: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：

Contextual Info: microelectronics group Lucent Technologies Bell Labs Innovations DSP16210 D igital Signal Processor The D SP 16210 is the first D SP device based FEATURES on the D SP16000 digital signal processing core. It is manufactured in a 0.35 J im CM O S technology and offers a 10 ns instruction cycle

fta02n60

Abstract: F*02N60 FTP02N60 ftp02n FTA-02
Contextual Info: FTP02N60/FTA02N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 8.9nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 4.4Ω 2.2A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

FTP08N50

Abstract: ftp08n FTA08N50 n-channel 250V 80a power mosfet ARK Microelectronics
Contextual Info: FTP08N50/FTA08N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 33nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 0.9Ω 8.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

high-tek

Contextual Info: AK6968 20V Dual Common Drain N-Channel MOSFET General Features ¾ ¾ ¾ ¾ Fast Switching Minimize the on-state Resistance 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS ON (Max.) ID 20V 0.017Ω @ VGS=4.5V 0.020Ω @ VGS=2.5V 6.2A 5.3A Applications

ftd01n

Abstract: TO252-DPAK FTD01 N-Channel 600V MOSFET FTU01N60A TO252-DPAK package 8E-05 FTD-01 ftd01n60a high-tek
Contextual Info: FTU01N60A/FTD01N60A 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 3.1nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 13.5Ω 0.8A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

fta04n60

Abstract: fta*04n60 MOSFET 40A 600V N-Channel 600V MOSFET
Contextual Info: FTP04N60/FTA04N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 2.2Ω 4.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

ftd01n

Abstract: FTD01N60 ftd01 TO252-DPAK DSAE003311 TO252-DPAK package FTU01N60 N-Channel 600V MOSFET
Contextual Info: FTU01N60/FTD01N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 4.8nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 8.2Ω 1.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

BALLAST CFL

Abstract: FTN01N60
Contextual Info: FTN01N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 8.2 Ω 1.0A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：

TO252-DPAK

Abstract: TO 252DPAK TO252-DPAK package TO-252DPAK
Contextual Info: FTU05N50/FTD05N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 1.35Ω 4.5A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

FTP10N40

Abstract: ftp06n40 ftp*06N40 FTP10N40 equivalent FTA10N40 FTA06N40 equivalent transistor of ftp10n40 60A 45V TO-220F Ftp10N4 equivalent transistor of ftp06n40
Contextual Info: FTP10N40/FTA10N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 34nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 400V 0.50Ω 10A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

FTA07N60

Abstract: FTP07N60
Contextual Info: FTP07N60/FTA07N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 38.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 1.1Ω 7.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

ftp05n50

Abstract: BVDSS FTP05N50/FTA05N50
Contextual Info: FTP05N50/FTA05N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 1.35Ω 4.5A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

diode ry 10 A

Contextual Info: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾

marking SH SOT23 mosfet

Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
Contextual Info: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501

ftu02p

Contextual Info: FTU02P25E 250V P-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID -250V 3.7Ω -2.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾

FTA06N60

Abstract: FTP06N60 MAr 11 058E-05 8E-05 031E03
Contextual Info: FTP06N60/FTA06N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 33nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 1.25Ω 6.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

ftp06n40

Abstract: ftp*06N40 FTA06N40 equivalent transistor of ftp06n40 0/FTP06N40
Contextual Info: FTP06N40/FTA06N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 18.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 400V 1.0Ω 5.5A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

p-channel 250V 30A power mosfet

Abstract: PN channel MOSFET 10A AK2501E
Contextual Info: AK2501E 250V N-Channel + P-Channel ESD-Protected MOSFET General Features t ESD Improved Capability Low ON Resistance Fast Switching RoHS Compliant/Lead Free Small Surface Mount Package SOP8 ee ¾ ¾ ¾ ¾ ¾ Applications High Efficiency SMPS DC/DC Converter

UM83C002

Abstract: UM83C021 C127E ESDI CRC-16 ST-506 QIC-36 ESDI host G0004 6L57
Contextual Info: UNICORN MICROELECTRONICS 24 E D T S T flT ñ ñ 0 0 0 0 3 ^ 2 T I 3 3 ñ S3 T ^ Z - S Z - ú Z UM83C021 Hard Disk Controller P R E L IM IN A R Y Features Sector • Serializer-deserializer ■ Programmable track format, compatible with WD Track format ■ External drive select and head select registers for expandability

L2496

Contextual Info: Military Standard Products UT22VP10 Universal RAD pal Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1996 FEATURES □ VDD: 5.0 volts ±10% □ High speed Universal RAD pal - tpj : 20ns, 25ns maximum - □ Radiation-hardened process and design; total dose irradia­