APX 2600 Search Results

7408 philips

Abstract: MCD122 BFG33 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408
Contextual Info: •I bbSBTBl 0054flCH Tb5 ■ APX P hilips Sem Product specification NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES b7E ]> PINNING PIN • High power gain

Contextual Info: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

BFR91 spice parameters

Abstract: BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A
Contextual Info: • bb53^31 0QB51fl2 MTM ■ APX Philips Semiconductors Product specification AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES BFR93A e PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 2 emitter

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

CD074

Contextual Info: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base

Contextual Info: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency

BFR90A

Abstract: transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209
Contextual Info: Philips Semiconductors bbSB^Bl GD31Ö03 773 APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AMER PHILIPS/DISCRETE FEATURES b'iE D PINNING • Low noise • Low intermodulation distortion PIN DESCRIPTION 3 Code: BFR90A/02 • High power gain

BT 1840 PA

Contextual Info: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure

Contextual Info: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

Contextual Info: 00 31 6 0 3 773 Philips Sem iconductors M APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AUER PHILIPS/DISCRETE FEATURES b^E I> PINNING PIN • Low noise • Low intermodulation distortion DESCRIPTION Code: BFR90A/02 • High power gain

TAG 9109

Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331
Contextual Info: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure

s8014 transistor

Contextual Info: Philips Semiconductors bLS3^31 0 0 2 4 ^ 10R • APX Product specification N AUER PHILIPS/DISCRETE L7E NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure PINNING PIN DESCRIPTION • High transition frequency

Contextual Info: Philips Semiconductors bb53T31 D D 3S lb T Video driver hybrid amplifiers • APX Product specification CR3424; CR3425; CR3427 —— FEATURES Ifl? N AMER PHILIPS/DISCRETE b^E ]> PINNING -S O T 1 15 • Typical 10 to 90% transition times with C L = 10 pF:

BFG195

Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
Contextual Info: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

PMBT2369

Contextual Info: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli­ cations in thick and thin-film circuits.

iw 1688

Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Contextual Info: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency

Contextual Info: • Philips Sem iconductors bb53T31 Q Q ^ a b l 14^ ■ APX NPN 5 GHz wideband transistors FEATURES • Product specification AUER PHILIPS/DISCRETE S b?E D ^ — BFG92A; BFG92A/X; BFG92A/XR PINNING PIN High power gain • Low noise figure • Gold metallization ensures

Contextual Info: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband

xl 1225 transistor

Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
Contextual Info: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

Contextual Info: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

TAG 453 665 800

Abstract: tag 665 100 BFQ67 KMI 814 ha 431 transistor 2857 730 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ philips 2322 662 9632 transistor ati 0943
Contextual Info: nu!1. 0 m b b s g ^ l DDESObb 3bD • APX „Product specification . , „ Philips Sem iconductors N AMER PHILIPS/DISCRETE b?E D NPN 8 GHz wideband transistor FEATURES BFQ67 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

NPN transistor SST 117

Contextual Info: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency