APTOS SEMICONDUCTOR Search Results

L0812

Abstract: A10C AP9A107B12TC ap9a107 ITT SHG 1,5 Hp 9347
Contextual Info: * p to s AP9A107B SEMICONDUCTOR 128K x 8 High Speed CMOS Static RAM Features Aptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns (Max .

Contextual Info: Creation Date: October 8,1997 Revision Date: October 16, 1998 DtOS • s e m ic o n d u c t o r AP9B112/AP9B112L PRELIMINARY 3.3V, 128K x 8 Very High-Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.

812AD

Abstract: V321
Contextual Info: Creation Date: August 4, 1998 Revision Date: October 7, 1998 K p to s _ I e m i c o n d u c t o r AP9A110/AP9A110L PRELIMINARY 5V, 128K x 8 High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.

Contextual Info: Creation Date: March 21, 1996 Revision Date: October 13, 1998 DtOS AP9A107B • s e m ic o n d u c t o r 128K x 8 High Speed CMOS Static RAM Features Aptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit

Contextual Info: Creation Date: July 28, 1998 Revision Date: October 2, 1998 K ptos _ Iemiconductor A P 9 B 1 1 1 /A P 9 B 1 1 1 L PRELIMINARY 3.3V, 128K x 8 Very High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.

Contextual Info: Creation Date: July 30, 1998 Revision Date: October 7, 1998 K ptos _I e m i c o n d u c t o r AP9A111/AP9A111L PRELIMINARY 5V, 128K x 8 Very High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.

Contextual Info: Creation Date: April 9,1996 Revision Date: June 7,1996 ptos • semiconductor AP9A102B PRELIMINARY 256K x 4 High Speed CMOS Static RAM Features • • • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable tpoE f°r cache applications

PIN CONFIGURATION IC RT 3060

Abstract: 06L09 32m25 Paver Components
Contextual Info: ^•îeauun u a ic. re u iu a iy i y y n Revision: June 6, 1996 K lptos AP32M256 I SEMICONDUCTOR 256K x 32 Static RAM Module Features • High-density, 8-megabit, asynchronous Static RAM • Low profile SIMM or ZIP package and 72-Pin Gold SIMM package • High-speed, -15, -20 and -25 ns

Aptos Semiconductor

Abstract: M721 m72.1 simm 72 pinout
Contextual Info: Creation Date: March 13, 1996 Revision: February 25, 1998 Kptos •sem ic o n d u c t o r _ A P 3 2 M 1 0 2 4 PRELIMINARY 1M x 32 Static RAM Module Features • High-density, 32-megabit, Static RAM Module • 32-bit standard footprint supports densities from

Contextual Info: Creation Date: May 14, 1996 Revision: February 25, 1998 Kptos AP32M512 PRELIMINARY • s e m ic o n d u c t o r 512K x 32 Static RAM Module Features • High-density, 32-megabit, Static RAM Module • 32-bit standard footprint supports densities from 128K x 32 through 1M x 32

M722

Contextual Info: Creation Date: February 1994 Revision: March 20, 1997 Kptos •s e m ic o n d u c to r Features • High-density, 8-megabit, asynchronous Static RAM • Available in 64- or 72-Pin, Tin or Gold, SIMM and a 64-Pin ZIP • High-speed,-15,-20 and-25 ns • Single 5 V ± 10% power supply

9A104-15

Abstract: AP9A104-12VC AP9A104-12TC ap9a104-12
Contextual Info: Creation Date: 2/28/96 Revision: October 6, 1998 K lp to s _ AP9A104 • s e m ic o n d u c t o r 64K Features X 16 CMOS Static RAM the device is accomplished by bringing Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Enable Low (BLE) is

T32.768

Contextual Info: Creation Date: March 2 1 ,1 9 96 Revision Date: June 7 ,1 9 9 6 A P 9 A 1 07 B 128K x 8 High Speed CMOS Static RAM PRELIMINARY Features A ptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access tim es as fast as 12 ns Max .

V361

Contextual Info: Creation Date: October 8,1997 Revision Date: October 27, 1998 DtOS • semiconductor A P 9 B 1 3 2 /A P 9 B 1 3 2 L 3.3V, 512K x 8 High-Speed, Low-Power CMOS Static RAM with Optional 2V Data Retention ADVANCED INFORMATION Features • • • • • • •

Aptos Semiconductor

Contextual Info: Revision Date: May 5, 1997 Kotos _AP9A405 • s e m ic o n d u c t o r 8192 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 20, 25, 35 ns

Contextual Info: Siptos IsemIconductor AP29F040 PRELIMINARY 512K x 8 CMOS Flash EPROM Features • Low Vc c write inhibit < 3.2 V • Packaged in: 32-Pin PLCC and TSOP • 5 V ± 10% program and erase for low power consumption and simplified system design • JEDEC-standard software commands, pinout and package

"white led" phosphor

Abstract: Asahi Rubber 6319425 AN-103 AN-104
Contextual Info: AN-104 LED Packaging Primer BACKGROUND: With the explosion of LED packaging world wide, there are many young engineers rediscovering process problems associated with manufacturing LED products. This primer is an attempt to share many of the principles learned in this industry over the last 30+ years. We will look at some of the material and process

Contextual Info: Creation Date: 2/28/96 Revision: 6/6/96 E l AP9A104 AP9B104 ADVANCED INFORMATION 5V and 3.3V, 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3, 3, 5, and 6 ns • M ultiple center power and ground pins for improved

AP9A128-15VC

Abstract: ap9a128 AP9A128-12VC L0812
Contextual Info: A P 9A 128 K p to s A P 9A 129 • SEMICONDUCTOR 32K x 8 High Speed CMOS Static RAM Features This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns Max . • • • • • • • Fast access times: 12, 15, 20 ns

L0812

Abstract: a1275 A-1275 2815AU AP9A127 AP9A127-8VC 2518N
Contextual Info: *p to s AP9A127 • s e m ic o n d u c t o r 32K x 8 Very High Speed CMOS Static RAM Features • • • • • • • • When Chip Enable CE is HIGH, the device assumes a standby mode at which the power dissipation can be reduced down to 10 |iW (typical) at CMOS input levels.

Contextual Info: »Creation Date: February 1994 Revision Date: June 6 , 1996 Mptos _ AP32M128 • SEMICONDUCTOR 128K x 32 Static RAM Module Features • • • • • • All inputs and outputs of the AP32M128 are TTL-compatible and operate from a single 5V supply. Full asynchronous cir­

AP9A128

Abstract: AP9A128-12VC AP9A128-20VC AP9A128-15VC AP9A128-20TC DS00007
Contextual Info: Revision: October 9, 1997 Kptos A P 9 A 1 2 8 _ A P 9 A 1 2 9 • s e m ic o n d u c t o r 32K x 8 High Speed CMOS Static RAM Features • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable t^oE f°r cache applications

9A104-15

Abstract: AP9A104-12 ap9a-104-12 AP9A104 AP9A104-12VC A14C Outline T44 L0812
Contextual Info: Kptos AP9A104 •SEMICONDUCTOR 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3,3, 5, and 6 ns • Multiple center power and ground pins for improved noise immunity • High-performance, low-power, CMOS double-metal

Contextual Info: Creation Date: October 9,1997 Revision Date: October 2, 1998 K ptos _ Iemiconductor AP9B110/AP9B110L PRELIMINARY 3.3V, 1 2 8 K x 8 H i g h -Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention performance, 0.35|j, CMOS process technology. This highly