APT8024B2VR Search Results
APT8024B2VR Functional Equivalents (5)
The Functional Equivalents tab will give you options that are likely to match the same function of APT8024B2VR, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| APT42F50S | Microchip Technology Inc | $9.9507 | Power Field-Effect Transistor, 42A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| APT56M50L | Microchip Technology Inc | $10.3146 | MOSFET MOS 8 500 V 56 A TO-264 |
| APT56F50L | Microchip Technology Inc | $11.6365 | FREDFET MOS 8 500 V 56 A TO-264 |
| APT56F50B2 | Microchip Technology Inc | $11.8180 | FREDFET MOS 8 500 V 56 A TO-247 MAX |
| APT6017B2FLLG | Microchip Technology Inc | $17.7170 | Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
APT8024B2VR Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT8024B2VR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 38.69KB | 2 | ||
| APT8024B2VR |
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Power MOS V MOSFET | Original | 138KB | 4 |
APT8024B2VR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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APT8024B2VFR
Abstract: APT8024B2VR APT8024LVR
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR | |
diode 132Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247 diode 132 | |
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Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247 | |
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Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 | |
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Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 | |
catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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