APT601 Search Results

APT6010LLLG

Abstract: APT6010B2LL APT6010LLL
Contextual Info: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

APT6013B2LL

Abstract: APT6013LLL
Contextual Info: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: A D V A NC E D POWER TECHNOLOGY 4*JE D • □ 5 S 7 S G ci A 0000305 d v a TST n c HAVP e d POWER ; T-3P \ - \ 5 Te c h n o lo g y APT601R3BN APT551R3BN APT601R6BN APT551R6BN „ POWER MOS IV™ 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30 £2 1.30 £2

Contextual Info: APT6017B2FLL APT6017LFLL 600V 35A 0.170W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT6017JLL 600V POWER MOS 7 R MOSFET ID 27 2 T- D SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS VDSS S G ® Symbol 0.170Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT6011B2VFR APT6011LVFR 600V 49A POWER MOS V FREDFET 0.110Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT6017JFLL 600V 31A 0.170W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

Contextual Info: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

DD2030

Contextual Info: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT601R3/601R6KN

Contextual Info: ADVANCFD P O WF R TECHNOLOGY M 'lE D 0 5 S 7 ‘10I1 OOOOMfiO 0b7 H A V P A dvanced POWER 'T-3°y-l3 Te c h n o l o g y POWER MOS IV APT601R3AN APT551R3AN APT601R6AN APT551R6AN 600V 550V 600V 550V 6.5A 6.5A 6.0A 6.0A 1.30 Q 1.30 i i 1.60 Cl 1.60 & N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT6010JLL

Contextual Info: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

APT6017JLL

Contextual Info: APT6017JLL 600V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

ff1131

Contextual Info: • r W . jA ADVANCED P ow er Te c h n o lo g y * APT601R3KN 600V 6.5A 1.300 APT601R6KN 600V 5.8A 1.60 £2 O D O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Sym bol V All Ratings: Tc = 25°C unless otherwise specified.

009F

Abstract: APT6010B2LL APT6010LLL 6710 mosfet
Contextual Info: APT6010B2LL APT6010LLL 600V 54A 0.100Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT6013JFLL

Abstract: diode by 126 diode 39a
Contextual Info: APT6013JFLL 600V 39A 0.130Ω TM Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses

APT601R3KN

Abstract: R6KN APT601R6KN
Contextual Info: ADVANCED P OWE R TECHNOLOGY blE D 0557^ 0^ 000071b =10i4 IAVP A dvanced P o w er Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT6013B2FLL APT6013LFLL 600V 43A 0.130W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010B2FLL APT6010LFLL 600V 54A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

5514f

Abstract: TO220H APT5514 TO-220H
Contextual Info: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.