APT50 Search Results

APT50DL60BCT

Abstract: TO247 5134 D3PAK
Contextual Info: APT50DL60BCT G 600V 50A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

transistors mj 1504

Abstract: Mosfet 600V, 20A diode schottky 600v infineon 20A 1,0V ISOTOP
Contextual Info: APT50N60JCCU2 ISOTOP Boost chopper VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K

APT50M75JLLU3

Abstract: mosfet 600V 30A
Contextual Info: APT50M75JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon

Contextual Info: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

APT5015BLC

Contextual Info: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT5017

Abstract: APT5017BLC APT5017SLC
Contextual Info: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

APT5014

Abstract: APT5014B2LC APT5014LLC
Contextual Info: APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN

Contextual Info: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT5028SVR A dvanced po w er Te c h n o l o g y 500V 20A 0.280Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

Contextual Info: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd

APT5040BNFR

Contextual Info: ADVANCED PO W ER Te c h n o l o g y * APT5040BNFR APT5050BNFR POWER MOS IV« 500V 500V 16A 0.40Ü 14A 0.500 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT5027BVR

Contextual Info: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

Contextual Info: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5010LVR

Abstract: apt5010l
Contextual Info: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

5622

Contextual Info: APT5014B2VR 37A 0.140Ω 500V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M80B2VFR

Abstract: ED 58A
Contextual Info: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®