APT4030CN Search Results

Contextual Info: A d van ced P o w er Te c h n o l o g y APT4030CNR POWER MOS IV 400V 15.0A 0.300ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7227, JX2N7227 and JV2N7227

MOS 4016

Abstract: 2u 64 diode TO-254AA Package MJ 800
Contextual Info: D TO-254 G 400V 15.0A 0.300Ω APT4030CNR S TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Low Gate Charge • Similar to the 2N7227, JX2N7227 and JV2N7227 MAXIMUM RATINGS

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

Contextual Info: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN

APT6015LVR

Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT1004RGN

Contextual Info: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750

4030cn

Contextual Info: N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS VDSS 'd Parameter APT 3530CN APT 4030CN APT 3540CN APT 4040CN UNIT 350 400 350 400 Volts Drain-Source Voltage Continuous Drain Current @ Tc - 25°C 15.0 13.0 60 52 Amps ’dm Pulsed Drain Current

Contextual Info: ADVANCED POWER T EC HN O LO GY 2GE D • G2S7TDT 00GÜ277 T r - 3 ?~/3 HERMETIC ISOLATED COMMERCIAL AND HI-REL MILITARY N-CHANNEL MOSFETS INPUT CAPAC­ ITANCE CISS PF POW ER DISSI­ PATION PD(MAX) (WATTS) NOTES 12.0 880 125 1 5.0 20.0 880 125 1 1.20 6.5