APT30G Search Results
APT30G Datasheets (58)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| APT30G100BN | Advanced Power Technology | Power MOS IV IGBT | Scan | 244.09KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GF60BN | Advanced Power Technology | Power MOS IV IGBT | Scan | 200.79KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GF60JU2 | Advanced Power Technology | Boost Chopper - IGBT | Original | 484.2KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GF60JU2 | Microsemi | IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 58A 192W SOT227 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GF60JU3 | Advanced Power Technology | Buck Chopper - IGBT | Original | 483.99KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GF60JU3 | Microsemi | IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 58A 192W SOT227 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GL100BN | Advanced Power Technology | Power MOS IV IGBT | Scan | 217.61KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60B | Microsemi | Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ | Original | 402.27KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BDQ2 | Advanced Power Technology | IGBT | Original | 437.07KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BDQ2G | Advanced Power Technology | IGBT | Original | 437.07KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BDQ2G | Microsemi | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 63A 203W TO247 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BG | Advanced Power Technology | IGBT | Original | 402.27KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BG | Microsemi | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 63A 203W TO247 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60KG | Microsemi | Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-220; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 30; | Original | 140.14KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60SDQ2G | Microsemi | Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 1.9; IC (A): 37; | Original | 153.4KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60SG | Microsemi | Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 1.9; IC (A): 37; | Original | 123.01KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GP60B | Advanced Power Technology | POWER MOS 7 IGBT | Original | 92.23KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GP60B | Advanced Power Technology | POWER MOS 7 IGBT | Original | 100.06KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GP60B | Microsemi | Insulated Gate Bipolar Transistor-PT High Speed | Original | 205.61KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GP60B2DLG | Microsemi | Insulated Gate Bipolar Transistor - Resonant Mode; Package: T-MAX ; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 45; | Original | 215.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30G Price and Stock
Microchip Technology Inc APT30GP60BGIGBT PT MOS 7 Single 600 V 30 A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT30GP60BG |
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APT30GP60BG | Tube | 20 Weeks | 70 |
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APT30GP60BG | Bulk | 250 |
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APT30GP60BG | Tube | 28 Weeks |
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APT30GP60BG |
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APT30GP60BG | 5 | 70 |
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APT30GP60BG | 22 Weeks | 1 |
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APT30GP60BG | 21 Weeks | 1 |
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APT30GP60BG | 8,661 |
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Microchip Technology Inc APT30GN60BDQ2GTrans IGBT Chip N-CH 600V 63A 203000mW 3-Pin(3+Tab) TO-247 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT30GN60BDQ2G |
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APT30GN60BDQ2G | 120 | 120 |
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APT30GN60BDQ2G | Tube | 26 Weeks | 120 |
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APT30GN60BDQ2G | 172 | 26 Weeks | 120 |
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APT30GN60BDQ2G | Bulk | 250 |
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APT30GN60BDQ2G | Tube | 28 Weeks |
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APT30GN60BDQ2G |
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APT30GN60BDQ2G | 28 Weeks | 1 |
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APT30GN60BDQ2G | 27 Weeks | 1 |
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APT30GN60BDQ2G | 3,553 |
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Microchip Technology Inc APT30GP60BDQ1GIGBT PT MOS 7 Combi 600 V 30 A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT30GP60BDQ1G |
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APT30GP60BDQ1G | Tube | 20 Weeks | 60 |
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APT30GP60BDQ1G | Bulk | 250 |
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APT30GP60BDQ1G | Tube | 28 Weeks |
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APT30GP60BDQ1G |
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APT30GP60BDQ1G | 60 |
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APT30GP60BDQ1G | 22 Weeks | 1 |
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APT30GP60BDQ1G | 21 Weeks | 1 |
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Microchip Technology Inc APT30GN60BGTrans IGBT Chip N-CH 600V 63A 203000mW 3-Pin(3+Tab) TO-247 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT30GN60BG |
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APT30GN60BG | Tube | 26 Weeks | 150 |
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APT30GN60BG | Bulk | 250 |
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APT30GN60BG | Tube | 28 Weeks |
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APT30GN60BG |
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APT30GN60BG | 28 Weeks | 1 |
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APT30GN60BG | 27 Weeks | 1 |
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APT30GN60BG | 2,633 |
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Microchip Technology Inc APT30GS60BRDQ2GIGBT NPT Low Frequency Combi 600 V 30 A TO-247, Projected EOL: 2028-04-30 - Contact for Pricing |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT30GS60BRDQ2G | 28 Weeks |
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APT30GS60BRDQ2G | 802 |
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APT30G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
APT30GT60KR
Abstract: APT30GT60KRG
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Original |
apt30gt60krapt30gt60krgo-220100khz | |
APT30GT60BRDLContextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers |
Original |
apt30gt60brdl | |
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Contextual Info: APT30GT60KR A dvanced W 7Æ P o w e r Te c h n o lo g y • R 6oov 55a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. |
OCR Scan |
apt30gt60kr150khzitter-collector50mil-std-750 | |
lm 1035Contextual Info: APT30GT60CR 600V 30A Thunderbolt IGBT TO-254 TO-254 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop |
Original |
apt30gt60cro-254150khz66vces+2 | |
30GT60BRD
Abstract: 30gt60br 30GT60B 30GT60 30gt
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Original |
apt30gt60brdo-247150khz30gt60brd+4 | |
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Contextual Info: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode |
Original |
apt30gp60jdf1 | |
APT30GP60BDF1Contextual Info: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode |
Original |
apt30gp60bdf1o-247 | |
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Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode |
Original |
apt30gp60bdf1o-247 | |
30GP60BDF1Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode |
Original |
apt30gp60bdf1o-247t0-24730gp60bdf1 | |
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Contextual Info: APT30GT60KR A dvanced R ow er Te c h n o lo g y 6oov 55A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. |
OCR Scan |
apt30gt60kr150khz20ki266vces+1 | |
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
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apt30gp60bsco-247silicon carbide power schottky diode 600v 30adata sheet ic 7450+2 | |
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Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers |
Original |
apt30gt60brdlo-247 | |
energy 3000 ups
Abstract: APT30GN60B MIC4452
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Original |
apt30gn60bapt30gn60sappli001energy 3000 ups+1 | |
APT30GF60JU3
Abstract: mj 1504
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Original |
apt30gf60ju3ot-227mj 1504 | |
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APT0502Contextual Info: APT30GF60JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 600V IC = 30A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT |
Original |
apt30gf60jcu2ot-227apt0502 | |
7400 IC
Abstract: APT30GP60B tl 7400 T0-247
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Original |
apt30gp60bo-2477400 ictl 7400+1 | |
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Contextual Info: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching |
Original |
apt30gp60jdq1e145592 | |
APT30GP60B
Abstract: T0-247 T0247 package
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Original |
apt30gp60bo-247t0-247t0247 package | |
APT30GT60BRD
Abstract: Thunderbolt
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Original |
apt30gt60brdo-247150khzthunderbolt | |
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Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers |
Original |
apt30gt60brdl | |
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Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers |
Original |
apt30gt60brdlo-247 | |
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Contextual Info: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high |
Original |
apt30gp60b2dlapt30gp60ldlo-247 | |
APT30GP60BDQ1GContextual Info: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching |
Original |
apt30gp60bdq1apt30gp60bdq1g | |
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Contextual Info: APT30GT60BR ADVANCED P o w er Te c h n o l o g y 600V 58A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology theThunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. |
OCR Scan |
apt30gt60br150khz10ophmil-std-750 | |