APT106 Search Results

Contextual Info: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package

apt60dq60

Abstract: APT106N60B2C6
Contextual Info: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

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Abstract: byv06
Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE OEST'ìO'ì D 0000Û33 T74 MAVP i A d v a n ced Q P 4 1 po w er Tec h n o lo g y APT10050CFN 1000V 22.0A 0.50 £2 APT9050CFN 900V 22.0A 0.50 Q O S E Q W E FLM O S IV L N - CHANNEL ENHANCEMENT MODE HIGH, VOLTAGE POWER UOSFETS

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

Contextual Info: 10/100Base-T Single Port Transformer APT-106 RoHS/RoHS II Compliant 11.43 x 9.24 x 5.51 mm | | | | | | | | | | | | | | STANDARD SPECIFICATIONS: Parameters Minimum Typical Maximum Units Operating Temperature -40 +85 °C Storage Temperature -40 +85 °C Inductance

APT1001RD

Abstract: APT5023
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

APT9050CFN

Contextual Info: r □BSTTO^ 0000033 T7M BiAVP blE T> ADVANCE» POWER TECHNOLOGY A D V A N C ED P O W ER T e c h n o lo g y APT10050CFN 1000V 22.0A 0.50 £i APT9050CFN 900V 22.0A 0.50 ß P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH;, 1 VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: 10/100Base-T Single Port Transformer APT-106 RoHS/RoHS II Compliant 12.70 x 9.30 x 6.35mm | | | | | | | | | | | | | | STANDARD SPECIFICATIONS: Parameters Minimum Typical Maximum Units Operating Temperature -40 +85 °C Storage Temperature -40 +85 °C Inductance

APT-106

Abstract: APT106 11FB 2000C
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER APT-106 RoHS Compliant 12.8 x 6.9 x 0.85mm | | | | | | | | | | | | | | | STANDARD SPECIFICATIONS: PARAMETERS Abracon P/N: APT-106 Operating Temperature: -40°C ~ +85°C Turn Ration ±2% : 1CT : 1CT Insertion Loss : -1.1dB max. ( 0.1 ~ 100MHz )

Contextual Info: Solar Solutions Fllex Diodes Dio ode des s Flex Semiconductor Inverter Modules The IDEAL Solar Bypass Solution Discrete Disc Di s re r Components TM LX2400 The IDEAL Solar Bypass Solution TM • Negligible Heat Generation – CoolRUNTM Technology - Less than 10°C rise at 10A

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system