APT100DQ60 Search Results
APT100DQ60 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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APT100DQ60
Abstract: APT100GT60LRG APT100GT60LR
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APT100GT60B2R APT100GT60LR 50KHz O-247 APT100DQ60 APT100GT60LRG | |
APT100GT60JRContextual Info: APT100GT60JR 600V TYPICAL PERFORMANCE CURVES APT100GT60JR E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast |
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APT100GT60JR APT100GT60JR 80KHz E145592 | |
APT100DQ60
Abstract: APT200GN60JDQ4 APT200GN60LDQ4 MIC4452 mj 1504 transistor
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APT200GN60JDQ4 APT100DQ60 APT200GN60JDQ4 APT200GN60LDQ4 MIC4452 mj 1504 transistor | |
0116 solar
Abstract: plcs 1530 APT100GN60LDQ4G APT100DQ60 APT100GN60LDQ4 MIC4452
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APT100GN60LDQ4 APT100GN60LDQ4 APT100GN60LDQ4G* O-264 0116 solar plcs 1530 APT100GN60LDQ4G APT100DQ60 MIC4452 | |
Contextual Info: APT100GN60LDQ4 G 600V TYPICAL PERFORMANCE CURVES APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum |
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APT100GN60LDQ4 APT100GN60LDQ4 APT100GN60LDQ4G* O-264 | |
APT200GN60JDQ4
Abstract: APT100DQ60 MIC4452 Ultra Low VF
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APT200GN60JDQ4 APT200GN60JDQ4 APT100DQ60 MIC4452 Ultra Low VF | |
Contextual Info: APT150GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and |
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APT150GN60JDQ4 | |
Contextual Info: APT200GN60B2G 600V, VCE ON = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling |
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APT200GN60B2G | |
Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. |
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APT200GT60JR 50KHz E145592 | |
Contextual Info: APT150GN60J 600V TYPICAL PERFORMANCE CURVES APT150GN60J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and |
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APT150GN60J | |
apt100gt60
Abstract: APT10035LLL APT100DQ60 APT100GT60JRDQ4
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APT100GT60JRDQ4 50KHz E145592 apt100gt60 APT10035LLL APT100DQ60 APT100GT60JRDQ4 | |
APT200GN60B2G
Abstract: APT100DQ60
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APT200GN60B2G APT200GN60B2G APT100DQ60 | |
apt100dq60
Abstract: APT150GN60J MIC4452 THOMSON IGBT silicon carbide
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APT150GN60J apt100dq60 APT150GN60J MIC4452 THOMSON IGBT silicon carbide | |
APT150GN60JDQ4
Abstract: APT100DQ60 APT100GN60LDQ4 MIC4452
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APT150GN60JDQ4 APT150GN60JDQ4 APT100DQ60 APT100GN60LDQ4 MIC4452 | |
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Contextual Info: 600V APT150GN60LDQ4 G Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and |
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APT150GN60LDQ4 | |
APT100DQ60Contextual Info: APT130N65JC6 650V COOL MOS 130A S S Super Junction MOSFET Po we r Se miconduc tors 0.020Ω • Ultra Low RDS ON D G • Low Miller Capacitance SO 2 T- 27 • Ultra Low Gate Charge, Qg "UL Recognized" • Avalanche Energy Rated file # E145592 IS OTO P • Extreme dv/dt Rated |
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APT130N65JC6 E145592 OT-227 APT100DQ60 | |
Contextual Info: APT100GT60B2R G APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. |
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APT100GT60B2R APT100GT60LR 50KHz O-247 | |
Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. |
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APT200GT60JRDQ4 50KHz E145592 | |
APT100DQ60
Abstract: APT150GN60J MIC4452 apt100d
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APT150GN60B2 APT100DQ60 APT150GN60J MIC4452 apt100d | |
0116 solar
Abstract: IGBT DRIVE 600V 300A APT100DQ60 APT100GN60B2 APT100GN60B2G MIC4452
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APT100GN60B2 APT100GN60B2 APT100GN60B2G* 0116 solar IGBT DRIVE 600V 300A APT100DQ60 APT100GN60B2G MIC4452 | |
Contextual Info: APT100GN60B2 G 600V TYPICAL PERFORMANCE CURVES APT100GN60B2 APT100GN60B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum |
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APT100GN60B2 APT100GN60B2 APT100GN60B2G* | |
Contextual Info: APT200GN60J 600V TYPICAL PERFORMANCE CURVES APT200GN60J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and |
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APT200GN60J | |
Contextual Info: TYPICAL PERFORMANCE CURVES APT150GN60B2 G 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and |
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APT150GN60B2 | |
APT100DQ60
Abstract: MIC4452 Ultra Low VF
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APT150GN60LDQ4 APT100DQ60 MIC4452 Ultra Low VF |