APT200GT60JR Search Results

APT200GT60JR Datasheets (3)

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Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT200GT60JR		Microsemi	Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100;	Original	PDF	204.54KB	6
APT200GT60JRDL		Microsemi	Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100;	Original	PDF	268.59KB	9
APT200GT60JRDQ4		Microsemi	Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100;	Original	PDF	235.66KB	9

APT200GT60JR Price and Stock

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Microchip Technology Inc


Microchip Technology Inc APT200GT60JR IGBT NPT Medium Frequency Single 600 V 200 A SOT-227, SOT-227, Projected EOL: 2028-08-09
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APT200GT60JR	Tube		26 Weeks		1 $46.98 10 $46.98 100 $40.58 1000 $37.22 10000 $36.00	Buy Now

APT200GT60JR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jr 50khz e145592	PDF
Contextual Info: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jrdl 50khz	PDF
Contextual Info: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jrdl 50khz	PDF
Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jrdq4 50khz e145592	PDF
APT200GT60JRDL Contextual Info: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jrdl 50khz	PDF
Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jrdq4 50khz e145592	PDF
Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jr 50khz e145592 ot-227	PDF
APT100DQ60 Abstract: APT200GT60JR Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jr 50khz e145592 apt100dq60	PDF
APT100DQ60 Abstract: APT200GT60JRDQ4 Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jrdq4 50khz e145592 apt100dq60	PDF
33182 Abstract: APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	apt200gt60jr 50khz e145592 33182 +5apt100dq60 igbt gs thunderbolt igbt apt100 apt100d	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10f-a smps 1000w 600v 300a igbt dc to dc boost converter +8sp6-p drf1400 smps 500w half bridge drf1300 1000w inverter mosfet 1000w solar power inverter apt30gt60brg 3000w inverter mosfet circuit	PDF
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	le79q2281 1n6761-1 2n2369au 2n2907aub +6br17 datasheet transistor si 6822 dimming led aplications dimming led driver aplications gc4600 ic zl70572	PDF